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1. 吉林大学电子科学与工程学院集成光电子学国家重点联合实验室,吉林 长春,130012
2. 中国科学院微电子研究所 北京,100029
收稿日期:2015-01-14,
修回日期:2015-02-23,
纸质出版日期:2015-10-05
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武明珠, 郭闰达, 张振松, 岳守振, 曲加伟, 胡守成, 黄苒, 杜寰, 王红波, 赵毅. 面向彩色有机微显示的有机白光顶发射器件[J]. 液晶与显示, 2015,30(5): 790-795
WU Ming-zhu, GUO Run-da, ZHANG Zhen-song, YUE Shou-zhen, QU Jia-wei, HU Shou-cheng, HUANG Ran, DU Huan, Wang Hong-bo, ZHAO Yi. Top emitting white organic light emitting diodes towards full color organic microdisplay[J]. , 2015,30(5): 790-795
武明珠, 郭闰达, 张振松, 岳守振, 曲加伟, 胡守成, 黄苒, 杜寰, 王红波, 赵毅. 面向彩色有机微显示的有机白光顶发射器件[J]. 液晶与显示, 2015,30(5): 790-795 DOI: 10.3788/YJYXS20153005.0790.
WU Ming-zhu, GUO Run-da, ZHANG Zhen-song, YUE Shou-zhen, QU Jia-wei, HU Shou-cheng, HUANG Ran, DU Huan, Wang Hong-bo, ZHAO Yi. Top emitting white organic light emitting diodes towards full color organic microdisplay[J]. , 2015,30(5): 790-795 DOI: 10.3788/YJYXS20153005.0790.
以比铝、银等金属材料透光性更好的铜作为白光有机顶发射器件的顶电极
将其应用到基于Al底电极的蓝、黄互补色顶发射白光有机电致发光器件(TEWOLED)
通过合理设计器件结构
制备出的器件具有较低的驱动电压和较高的效率
4 V下亮度超过1000 cd/m
2
、功率效率达到28.5 lm/W
效率滚降较小。我们利用p型电学掺杂结构和电子注入缓冲层结构分别解决了铝和铜电极功函数同空穴传输层的HOMO能级和电子传输层的LUMO能级不匹配问题
并通过TcTa光学覆盖层的调节作用使器件具有较好的光谱稳定性。基于Cu顶电极的TEWOLED与采用Al作为互连金属的CMOS工艺兼容
我们将该器件与硅基CMOS驱动电路结合
获得了SVGA白光有机微显示器件
为彩色有机发光微显示的实现奠定了基础。
This paper demonstrated the top emitting white organic light emitting diodes (TEWOLED) with Cu top electrode
which achieved a brightness over 1000 cd/m
2
at a operating voltage of 4 V with a power efficiency of 28.5 lm/W. With the modification of electron injection layer
Cu is able to work as a top cathode despite its high work function which fails to the lowest unoccupied molecular orbital (LUMO) of electron transporting layer
p type donation resolved the problem of Al work function unmatched with the highest occupied molecular orbital (HOMO) of the holes transporting layer. The angular property of the emission spectra was ameliorated by the introduction of TcTa capping layer. A prototype of SVGA TEWOLED is finally demonstrated. This study paves the way towards organic full-color micro display.
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