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昆山龙腾光电有限公司, 江苏 昆山 215301
收稿日期:2014-09-10,
修回日期:2014-12-22,
纸质出版日期:2015-06-05
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张军, 苏子芳, 关星, 赵哲. 一种窄边框的液晶显示面板设计[J]. 液晶与显示, 2015,30(3): 467-471
ZHANG Jun, SU Zi-fang, GUAN Xing, ZHAO Zhe. New design of narrow border LCD panel[J]. , 2015,30(3): 467-471
张军, 苏子芳, 关星, 赵哲. 一种窄边框的液晶显示面板设计[J]. 液晶与显示, 2015,30(3): 467-471 DOI: 10.3788/YJYXS20153003.0467.
ZHANG Jun, SU Zi-fang, GUAN Xing, ZHAO Zhe. New design of narrow border LCD panel[J]. , 2015,30(3): 467-471 DOI: 10.3788/YJYXS20153003.0467.
为了满足市场对LCD面板高分辨率、窄边框的需求
面板设计引入了玻璃上集成栅极驱动设计.本文对传统液晶显示面板栅极电路设计做了介绍
分析了集成栅极驱动电路技术在实现显示面板窄边框化时的优缺点.提出了一种新型栅极驱动电路
将空间控制转化为时间控制
使用一条栅极走线控制两行甚至多行像素.模拟分析结果表明:新型栅极驱动电路在关态下会产生2.5 V的较小噪声;栅极信号的上升沿及下降沿的时间延迟总和只有 3.5 s
可以实现像素节点的正常充放电并完成显示面板的正常显示.同时
本文提出的新型驱动电路可成倍减少显示面板边框栅极走线数量
减少栅极走线所占用的空间
实现高分辨率高解析度显示面板的窄边框化设计.
In order to meet the requirement of the market for LCD panel's high resolution and narrow frame performance
the gate driver in array(GIA) employing a_Si:H TFTs technology has emerged in recent years. This paper briefly introduced the operation principle of the traditional integrated gate driver and its effects on LCD panel design
then proposed a novel gate driving circuit through single gate to control rows of pixels
so that the number of gate lines can be sharply decreased which result in saving much more space for narrow bezel design. Simulation results show that a little noise with 2.5 V happens at off-state of the new circuit's gate line
and the delay time of the gate waveform at both the rising and falling edge is only 3.5 s
totally. The charging and discharging of pixel can achieve for normal display. At the same time
the new driving circuit proposed in this paper can greatly reduce frame border of panel
through the way of reducing the number of gate fanout lines.
Nakajima S, Sugiyama Y, Ichinose H, et al. Novel liquid-crystal materials with high birefringence and low rotational-viscosity for the field-sequential color TN-LCDs[J].SID Symposium Digest of Technical Papers, 2000, 31(1): 242-245.[2] 董小春, 杜春雷. 负性光刻胶刻蚀工艺研究[J]. 光子学报, 2004, 32(12): 1422-1425. Dong X C, Du C L. Study on lighography of negative resists[J]. Acta Optica Sinica, 2004,32(12):1422-1425.[3] Lee S H, Kim H Y, Lee S M, et al. Ultra-FFS TFT-LCD with super image quality, fast response time, and strong pressure-resistant characteristics [J]. Journal of the Society for Information Display, 2002, 10(2): 117-122.[4] Moon S H, Lee Y S, Lee M C, et al. Integrated a-Si: H TFT gate driver circuits on large area TFT-LCDs[J].SID Symposium Digest of Technical Papers. Blackwell Publishing Ltd, 2007, 38(1): 1478-1481.[5] Oh J H, Hur J H, Son Y D, et al. 2.0 inch a-Si: H TFT-LCD withlow noise integrated gate driver[J].SID Symposium Digest of Technical Papers, 2005, 36(1): 942-945.[6] Hwang I, Moh S, Lee M C, et al. 55.4: Design of integrated a-Si gate driver circuits for low power consumption [J].SID Symposium Digest of Technical Papers, 2008, 39(1): 842-845.[7] Liao C, He C, Chen T, et al. Implementation of an a-Si: H TFT gate driver using a five-transistor integrated approach [J]. Electron Devices, IEEE Transactions ON, 2012, 59(8): 2142-2148.[8] Choi J W, Kwon M S, Koo J H, et al. Noble a-Si:H gate driver with high stability[J].SID Symposium Digest of Technical Papers, 2008, 39(1): 1227-1230.
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