TFT-LCD过孔接触电阻研究

白金超; 王玉堂; 郭总杰; 丁向前; 袁剑峰; 邵喜斌

doi:10.3788/YJYXS20153003.0432

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TFT-LCD过孔接触电阻研究

器件物理及器件制备技术 | 更新时间：2020-08-12

- TFT-LCD过孔接触电阻研究
- Via hole contact resistance in TFT-LCD
- 液晶与显示 2015年30卷第3期页码：432-436
- 作者机构：
  
  北京京东方显示技术有限公司, 北京 100176
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20153003.0432
  中图分类号： TN141.9
- 收稿日期：2014-10-29，
  
  修回日期：2014-11-17，
  
  纸质出版日期：2015-06-05
- 稿件说明：
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白金超, 王玉堂, 郭总杰, 丁向前, 袁剑峰, 邵喜斌. TFT-LCD过孔接触电阻研究[J]. 液晶与显示, 2015,30(3): 432-436

BAI Jin-chao, WANG Yu-tang, GUO Zong-jie, DING Xiang-qiang, YUAN Jian-feng, SHAO Xi-bin. Via hole contact resistance in TFT-LCD[J]. , 2015,30(3): 432-436
白金超, 王玉堂, 郭总杰, 丁向前, 袁剑峰, 邵喜斌. TFT-LCD过孔接触电阻研究[J]. 液晶与显示, 2015,30(3): 432-436 DOI： 10.3788/YJYXS20153003.0432.

BAI Jin-chao, WANG Yu-tang, GUO Zong-jie, DING Xiang-qiang, YUAN Jian-feng, SHAO Xi-bin. Via hole contact resistance in TFT-LCD[J]. , 2015,30(3): 432-436 DOI： 10.3788/YJYXS20153003.0432.

摘要

研究了过孔接触电阻变化规律

并进行机理分析

为优化薄膜晶体管的过孔设计提供依据.首先

运用开尔文四线检测法对不同大小、形状、数量的钼/铝/钼结构的栅极和源/漏层金属与氧化铟锡连接过孔的接触电阻进行测试.然后

通过扫描电子显微镜、能量色散X射线光谱仪和聚焦离子束显微镜对过孔内部形貌进行表征.最后

对过孔接触电阻变化规律进行机理分析.实验结果表明:过孔面积越大

接触电阻越小;过孔面积相同时

长方形过孔的接触电阻小于正方形过孔的接触电阻

多小孔的接触电阻小于单大孔的接触电阻

栅极金属与氧化铟锡的过孔接触电阻小于源/漏层金属与氧化铟锡的过孔接触电阻.为了降低钼/铝/钼与氧化铟锡连接过孔的接触电阻

过孔面积尽可能最大化

采用长方形过孔优于正方形过孔

多小过孔优于单大孔设计

同时优化过孔刻蚀工艺

减少过孔内顶层钼的损失.

Abstract

In order to optimize via hole design of TFT array substrate and reduce via hole contact resistance

the contact resistance of different size

shape

number of Mo/Al/Mo and Indium-Tin Oxide (ITO) connection via holes are tested by Kelvin Four-terminal sensing. Then via hole morphology is characterized by scanning electron microscopy (SEM)

focused ion beam (FIB) and energy dispersive spectroscopy (EDS). Finally

the mechanism of via hole contact resistance test results are analyzed. Experimental results indicate that the bigger via hole area is

the smaller the contact resistance will be

and in the same via hole area

the contact resistance of rectangular via hole is smaller than that of a square via hole

the contact resistance of the multi small holes is smaller than that of the single big via hole

the via hole contact resistance of Gate metal and ITO is smaller than that of SD metal and ITO. For reducing via hole contact resistance

via hole area is maximized. The rectangular via hole is better than that of the square via hole

the multi small holes are better than that of the single big via hole

and via etch process is optimized to reduce top Mo loss.

关键词

Keywords

references

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