TFT-LCD产业中GOA单元不良的研究

张小祥; 颉芳霞; 刘正; 郭总杰; 袁剑峰; 邵喜斌

doi:10.3788/YJYXS20153003.0387

您当前的位置：

首页 >

文章列表页 >

TFT-LCD产业中GOA单元不良的研究

材料物理和化学 | 更新时间：2020-08-12

- TFT-LCD产业中GOA单元不良的研究
- GOA unit defect in TFT-LCD industry
- 液晶与显示 2015年30卷第3期页码：387-392
- 作者机构：
  
  1. 北京京东方显示技术有限公司北京,100176
  2. 江南大学江苏省食品先进制造装备技术重点实验室,江苏无锡,214122
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20153003.0387
  中图分类号： TB31
- 收稿日期：2014-09-11，
  
  修回日期：2014-10-09，
  
  纸质出版日期：2015-06-05
- 稿件说明：
移动端阅览
张小祥, 颉芳霞, 刘正, 郭总杰, 袁剑峰, 邵喜斌. TFT-LCD产业中GOA单元不良的研究[J]. 液晶与显示, 2015,30(3): 387-392

ZHANG Xiao-xiang, XIE Fang-xia, LIU Zheng, GUO Zong-jie, YUAN Jian-feng, SHAO Xi-bin. GOA unit defect in TFT-LCD industry[J]. , 2015,30(3): 387-392
张小祥, 颉芳霞, 刘正, 郭总杰, 袁剑峰, 邵喜斌. TFT-LCD产业中GOA单元不良的研究[J]. 液晶与显示, 2015,30(3): 387-392 DOI： 10.3788/YJYXS20153003.0387.

ZHANG Xiao-xiang, XIE Fang-xia, LIU Zheng, GUO Zong-jie, YUAN Jian-feng, SHAO Xi-bin. GOA unit defect in TFT-LCD industry[J]. , 2015,30(3): 387-392 DOI： 10.3788/YJYXS20153003.0387.

摘要

通过对TFT-LCD 制造过程中GOA单元不良原因的研究

提出了改善GOA单元不良的方法.分析表明静电放电(ESD)的发生在于电容瞬间释放的电流过大

导致过细的金属线熔化;沟道桥接和开裂的发生在于显影效应

显影方向以及图案密度

导致局部区域沟道光刻胶厚度偏厚和偏薄.采用静电分散释放的连线设计

ESD的发生率从5.4%降低到0.04%以下.GOA单元两侧增加测试图样(Dummy Pattern)的设计防止沟道桥接的发生

减压干燥(VCD)抽气曲线的调整和软烘(Soft Bake)底部温度的优化措施防止沟道开裂的发生

沟道桥接和开裂的发生率从13.4%降低到1.22%以下.

Abstract

The reason for GOA unit defect is analyzed in the TFT-LCD manufacturing process

and the improving methods are given. The results show that the occurrence of the ESD is ascribed to excessive instantaneous release current of capacitance

leading to superfine wire melting

while the occurrence of the Channel Bridge and Open is related to the development effect

development direction and pattern density

which cause the abnormal channel photo resist. The design of electrostatic dispersion release makes the incidence of ESD reduce from 5.4% to below 0.04%. The design of adding Dummy Pattern in both sides of GOA unit prevents Channel Bridge

meanwhile the adjustment of Vacuum Dry extraction curve and the optimization of Soft Bake bottom temperature prevent Channel Open

which make the incidence of Channel Bridge and Open decrease from 13.4% to below 1.22%.

关键词

Keywords

references

Chang T T, Hsun C L, Chang S M, et al. Gate driver on array of a display, US:US 2011/0018001 Al [P]. 2011-01-27.[2] Chang L H. Gate driver on array structure and display, US: US 786835 7 B2 [P]. 2011-01-11.[3] 刘士奎, 王超, 杨雪, 等. 液晶显示领域之GOA技术专利分析[J]. 中国发明与专利, 2013 (6): 21-28. Liu S K, Wang C, Yang X,et al. The analysis of GOA technology patent in Liquid crystal display [J]. China Invention & Patent, 2013 (6): 21-28.[4] Yoon S Y, Jang Y H, Kim B, et al. Highly stable integrated gate driver circuit using a-Si TFT with dual pull-down structure [J]. SID Digest, 2005, 5(1): 348-351.[5] Lin C L, Cheng M H, Wu C E, et al. An Integrated a-Si:H gate driver circuit design for large-sized TFT-LCD applications [J]. SID Digest, 2013, 13(1): 1007-1009.[6] Hu Z J, Liao C W, Li J M, et al. A-Si:H TFT gate driver with shared dual pull-down units for large-sized TFT-LCD applications [J]. SID Digest, 2014, 12(1): 986-989.[7] 周伟峰, 薛建设, 金基用,等. 不同狭缝与遮挡条设计对TFT特性的影响与规律[J]. 液晶与显示, 2011, 26(2):165-169. Zhou W F, Xue J S, Jin J Y, et al. Effects and regularity of different slit & bar design on TFT Characteristics [J].Chinese Journal of Liquid Crystals and Displays, 2011, 26(2):165-169.(in Chinese)[8] 李欣欣, 龙春平, 王威. TFT-LCD工艺与静电击穿[J]. 现代显示, 2007(4): 59-63. Li X X, Long C P, Wang W. TFT-LCD Process and ESD [J]. Advanced Display, 2007(4): 59-63.(in Chinese)

浏览量

117

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

暂无数据