TFT-LCD制程中Sand Mura的失效模式分析及改善研究

史高飞; 沈奇雨; 许徐飞; 宋洁; 赵娜; 韩基挏; 李乘揆

doi:10.3788/YJYXS20153002.0257

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TFT-LCD制程中Sand Mura的失效模式分析及改善研究

器件物理及器件制备技术 | 更新时间：2020-08-12

- TFT-LCD制程中Sand Mura的失效模式分析及改善研究
- Research and improvement of Sand Mura failure mode in TFT-LCD array process
- 液晶与显示 2015年30卷第2期页码：257-262
- 作者机构：
  
  合肥京东方光电科技有限公司,安徽合肥,230012
- 作者简介：
- 基金信息：
- DOI：10.3788/YJYXS20153002.0257
  中图分类号： TN87
- 收稿日期：2014-08-10，
  
  修回日期：2014-09-22，
  
  纸质出版日期：2015-04-05
- 稿件说明：
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史高飞, 沈奇雨, 许徐飞, 宋洁, 赵娜, 韩基挏, 李乘揆. TFT-LCD制程中Sand Mura的失效模式分析及改善研究[J]. 液晶与显示, 2015,30(2): 257-262

SHI Gao-fei, SHEN Qi-yu, XU Xu-fei, SONG Jie, ZHAO Na, HAN Ji-dong, LI Cheng-kui. Research and improvement of Sand Mura failure mode in TFT-LCD array process[J]. , 2015,30(2): 257-262
史高飞, 沈奇雨, 许徐飞, 宋洁, 赵娜, 韩基挏, 李乘揆. TFT-LCD制程中Sand Mura的失效模式分析及改善研究[J]. 液晶与显示, 2015,30(2): 257-262 DOI： 10.3788/YJYXS20153002.0257.

SHI Gao-fei, SHEN Qi-yu, XU Xu-fei, SONG Jie, ZHAO Na, HAN Ji-dong, LI Cheng-kui. Research and improvement of Sand Mura failure mode in TFT-LCD array process[J]. , 2015,30(2): 257-262 DOI： 10.3788/YJYXS20153002.0257.

摘要

在薄膜晶体管液晶显示器件(TFT-LCD)的制作过程中

Mura是一种常见的不良现象

它可以直接影响到产品的画面品质。本文结合生产工艺的实际情况

采用宏观微观检查设备Macro/Micro(M/M)、扫描电子显微镜(SEM)、聚焦离子束测试仪(FIB)等设备进行检测分析

研究了产品开发过程中出现的Sand Mura问题。实验结果表明

Sand Mura 发生的主要原因是像素电极ITO在刻蚀过程中由于过刻发生断裂

导致在通电时该处液晶分子偏转发生异常

进而阻挡了光的透过而形成暗点;通过变更ITO薄膜的厚度及刻蚀时间等一系列措施

防止了像素电极在PVX过孔处因过刻引起的断裂

不良发生率降至0.3%

产品质量得到了很大的提高。此外

过孔设计优化方案有助于新产品开发阶段避免该不良的发生

为以后相关问题的研究奠定了一些理论基础。

Abstract

Mura is a common defect which degrades display quality greatly in TFT-LCD process. Sand Mura was studied in this paper which happened in a new product development

and the experiments were carried out by Macroscopic and Microscopic Inspection(M/M)

Scanning Electron Microscope(SEM)

Focused Ion beam(FIB) and so on. Experimental results show that the pixel electrode ITO open happened in the over wet etch process is the root cause of Sand Mura defect

and it also lead to liquid crystal molecules deflected exception

therefore

the light was shielded and dark spots were generated; By adjusting the thickness of pixel electrode ITO film

etch time and other measures

pixel electrode open can be avoid which is related to the over etch in the PVX hole

the defect ratio of Sand Mura can be reduce to 0.3% and the display quality of product was effectively improved. In addition

the optimizing via design scheme and above mentioned results provide valuable data and theory basis for related issues in the development stage of new product.

关键词

Keywords

references

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