搭桥晶粒多晶硅薄膜晶体管直流电应力下的退化行为与退化机制研究

张猛; 夏之荷; 周玮; 陈荣盛; 王文; 郭海成

doi:10.3788/YJYXS20153002.0187

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搭桥晶粒多晶硅薄膜晶体管直流电应力下的退化行为与退化机制研究

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- 搭桥晶粒多晶硅薄膜晶体管直流电应力下的退化行为与退化机制研究
- Degradation behaviors and degradation mechanisms of bridged-rain polycrystalline silicon thin film transistors under DC bias stresses
- 液晶与显示 2015年30卷第2期页码：187-193
- 作者机构：
  
  香港科技大学先进显示与光电子技术国家重点实验室,香港,中国,999077
- 作者简介：
- 基金信息：
  
  香港研究资助局主题研究计划项目(No.T23-713/11-1)()
- DOI：10.3788/YJYXS20153002.0187
  中图分类号： TN141
- 收稿日期：2014-08-27，
  
  修回日期：2014-09-18，
  
  纸质出版日期：2015-04-05
- 稿件说明：
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张猛, 夏之荷, 周玮, 陈荣盛, 王文, 郭海成. 搭桥晶粒多晶硅薄膜晶体管直流电应力下的退化行为与退化机制研究[J]. 液晶与显示, 2015,30(2): 187-193

ZHANG Meng, XIA Zhi-he, ZHOU Wei, CHEN Rong-sheng, WONG Man, KWOK Hoi-sing. Degradation behaviors and degradation mechanisms of bridged-rain polycrystalline silicon thin film transistors under DC bias stresses[J]. , 2015,30(2): 187-193
张猛, 夏之荷, 周玮, 陈荣盛, 王文, 郭海成. 搭桥晶粒多晶硅薄膜晶体管直流电应力下的退化行为与退化机制研究[J]. 液晶与显示, 2015,30(2): 187-193 DOI： 10.3788/YJYXS20153002.0187.

ZHANG Meng, XIA Zhi-he, ZHOU Wei, CHEN Rong-sheng, WONG Man, KWOK Hoi-sing. Degradation behaviors and degradation mechanisms of bridged-rain polycrystalline silicon thin film transistors under DC bias stresses[J]. , 2015,30(2): 187-193 DOI： 10.3788/YJYXS20153002.0187.

摘要

研究了搭桥晶粒(BG)多晶硅薄膜晶体管(TFT)在直流电应力下的退化行为和退化机制。与普通多晶硅TFT相比

BG多晶硅TFT展现出更好的直流应力可靠性。主要体现在BG多晶硅TFT拥有更好的直流负偏压温度不稳定性(NBTI)可靠性

更好的直流自加热(SH)可靠性

更好的直流热载流子(HC)可靠性。有源沟道区的BG结构是上述直流应力可靠性提高的主要原因。更好的NBTI的可靠性主要源于沟道内的硼氢键的形成;更好的SH可靠性主要源于在沟道长度方向上更快的焦耳热扩散率;更好的HC可靠性主要源于漏端横向电场(

)的减弱。所有的测试结果都表明

这种高性能高可靠性的BG多晶硅TFT在片上系统中具有很大的应用前景。

Abstract

Degradation behaviors and degradation mechanisms of bridged-grain (BG) polycrystalline silicon thin film transistors (TFTs) under DC bias stresses are studied and investigated. Compared to normal poly-Si TFTs

BG poly-Si TFTs exhibits better negative bias temperature instability (NBTI)

better self-heating (SH) reliability and better hot carrier (HC) reliability. All these DC reliability improvements come from BG lines inside the active channel. By selectively doping the active channel in BG poly-Si TFTs

boron-hydrogen bonds formation at oxide/channel interface and grain boundaries

Joule heat diffusion enhancement at channel length direction and lateral electric field reduction at the drain side are respectively responsible for the improved NBTI reliability

SH reliability and HC reliability. All test results indicate that such high performance and high reliable BG poly-Si TFTs have great potential in system-on-panel applications.

关键词

Keywords

references

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