基于不同自组装单层的酞菁氧钒薄膜晶体管

崔宁; 张娟; 李航宇; 宋德

doi:10.3788/YJYXS20153001.0057

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基于不同自组装单层的酞菁氧钒薄膜晶体管

器件物理及器件制备技术 | 更新时间：2020-08-12

- 基于不同自组装单层的酞菁氧钒薄膜晶体管
- Vanadyl phthalocyanine thin film transistors based on different self-assembled monolayer
- 液晶与显示 2015年30卷第1期页码：57-63
- 作者机构：
  
  长春理工大学理学院,吉林长春,130022
- 作者简介：
- 基金信息：
  
  高等学校博士学科点专项科研基金(No.20112216120008)()
- DOI：10.3788/YJYXS20153001.0057
  中图分类号： TN386.2
- 收稿日期：2014-06-06，
  
  修回日期：2014-06-19，
  
  网络出版日期：2014-07-15，
  
  纸质出版日期：2015-02-05
- 稿件说明：
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崔宁, 张娟, 李航宇, 宋德. 基于不同自组装单层的酞菁氧钒薄膜晶体管[J]. 液晶与显示, 2015,30(1): 57-63

CUI Ning, ZHANG Juan, LI Hang-yu, SONG De. Vanadyl phthalocyanine thin film transistors based on different self-assembled monolayer[J]. , 2015,30(1): 57-63
崔宁, 张娟, 李航宇, 宋德. 基于不同自组装单层的酞菁氧钒薄膜晶体管[J]. 液晶与显示, 2015,30(1): 57-63 DOI： 10.3788/YJYXS20153001.0057.

CUI Ning, ZHANG Juan, LI Hang-yu, SONG De. Vanadyl phthalocyanine thin film transistors based on different self-assembled monolayer[J]. , 2015,30(1): 57-63 DOI： 10.3788/YJYXS20153001.0057.

摘要

研究了不同界面修饰层对酞菁氧钒(VOPc)薄膜晶体管性能的影响.通过AFM图谱分析不同界面修饰层上VOPc薄膜的生长行为

通过半导体参数测试仪测试分析不同界面上器件的电学特性.实验结果表明

十八烷基三氯硅烷(OTS-18)修饰后生长的VOPc薄膜

比正辛基三氯硅烷(OTS-8)和苯基三氯硅烷(PTS)修饰后的薄膜晶体尺寸更大、质量更优;基于OTS-18修饰的底栅顶接触型VOPc有机薄膜晶体管

在4种结构器件中具有最高的场效应迁移率(0.51 cm

/Vs)

相对于未修饰的器件迁移率提高了近40倍.较长的烷基链能够有效地隔绝VOPc分子和二氧化硅之间的相互作用

利于形成大晶粒尺寸、少缺陷的优质薄膜

获得高迁移率的TFT器件.绝缘层表面自组装单分子层的厚度对其上薄膜的生长行为和相应器件的性能影响极为明显

这一结论对有机半导体薄膜生长和器件制备具有指导意义.

Abstract

The performance of vanadyl phthalocyanine (VOPc) thin film transistor with different modified surfaces is studied. The surface morphology of VOPc films on different modified surfaces were observed through atomic force microscopy (AFM) maps

and the electrical properties of VOPc OTFT were also observed through semiconductor parameter test instrument. The experimental results reveal that the VOPc film on octadecyltrichlorosilane(OTS-18) modified substrate has much larger crystal size and better film than those on octyltrichlorosilane(OTS-8) and phenyltrichlorosilane(PTS). The VOPc TFT with bottom-gate top-contact type on OTS-18 treated substrate has the highest mobility (0.52 cm

/Vs) in the four devices

which is 40 times relative to that on non modified. The interaction force between VOPc and SiO

can be effectively isolated by the length of alkyl chain

conducive to the formation of large grain size and less film quality defects

the high mobility of TFT device can be achieved. The thickness of the self-assembled monolayer on the insulating layer can significantly affect the growth of VOPc films and the performance of device. This conclusion could be supplied as experiment and theory foundations for the fabrication of high-performance TFT and the growth of organic semiconductor thin film.

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references

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