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1. 江南大学 物联网工程学院, 江苏 无锡 214122
2. 西安电力整流器有限责任公司, 陕西 西安 710077
收稿日期:2014-05-19,
修回日期:2014-06-27,
纸质出版日期:2014-12-05
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景亚霓, 滕支刚, 魏志芬. Tips-PEN薄膜载流子迁移率的稳态SCLC与阻抗谱法测量的研究[J]. 液晶与显示, 2014,29(6): 1077-1082
JING Ya-ni, TENG Zhi-gang, WEI Zhi-fen. Tips-PEN thin film carrier mobility evaluated by steady-state SCLC and impedance spectroscopy[J]. , 2014,29(6): 1077-1082
景亚霓, 滕支刚, 魏志芬. Tips-PEN薄膜载流子迁移率的稳态SCLC与阻抗谱法测量的研究[J]. 液晶与显示, 2014,29(6): 1077-1082 DOI: 10.3788/YJYXS20142906.1077.
JING Ya-ni, TENG Zhi-gang, WEI Zhi-fen. Tips-PEN thin film carrier mobility evaluated by steady-state SCLC and impedance spectroscopy[J]. , 2014,29(6): 1077-1082 DOI: 10.3788/YJYXS20142906.1077.
利用稳态SCLC法和阻抗谱法测量了由溶液工艺制备的Tips-PEN薄膜的空穴迁移率,并对两种方法的测试结果进行比较和分析。测试样品是p+Si/PEDOT:PSS/Tips-PEN/Ag构成的单载流子器件。稳态SCLC法测试的器件Tips-PEN厚度为87 nm,得到零场迁移率和场依赖因子分别为1.2110
-5
cm
2
/(Vs)和0.002 4 (cm/V)
1/2
;阻抗谱法测试的器件Tips-PEN厚度为827 nm,得到零场迁移率和场依赖因子分别为1.21910
-5
cm
2
/(Vs)和0.003 47 (cm/V)
1/2
。稳态SCLC法得到的场依赖因子较小,呈现较弱的场依赖关系,其原因是为得到无陷阱模式下的稳态SCLC需要施加的电场远远高于阻抗谱测量时的电场,以至于注入较高的载流子浓度。这一结果显示了在较高载流子浓度下迁移率与场的依赖变弱,与理论模型和模拟预测的趋势一致。
The field-dependent hole mobility of Tips-PEN film prepared by solution-process was extracted with steady-state SCLC and impedance spectroscopy method
and the results of the two methods were compared and analyzed. The samples used in this study have a general structure of p+ Si/PEDOT:PSS / Tips-PEN /Ag
which is a single-carrier device. For Tips-PEN thickness of 87 nm devices
the zero field mobility and the field-dependent factors obtained with steady-state SCLC were 1.21 10
-5
cm
2
/(Vs) and 0.002 4(cm/V)
1/2
respectively. For thickness of 827 nm device
the zero field mobility and field-dependent factors obtained with impedance spectroscopy were 1.219 10
-5
cm
2
/(Vs) and 0.003 47(cm/V)
1/2
respectively. The smaller field-dependent factor obtained by steady-state SCLC shows that the mobility is weaker dependent on the field. This is due to much higher electric field applied in order to get steady-state free-trap SCLC than that in impedance spectroscopy and then higher carrier concentration is injected. The result shows that there is weaker electric field dependence of mobility in higher carrier concentration and is consistent with theoretical model and simulation.
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