纳米裂缝位置可控的表面传导电子发射薄膜

杨小艳; 沈志华; 吴胜利

doi:10.3788/YJYXS20142906.0911

您当前的位置：

首页 >

文章列表页 >

纳米裂缝位置可控的表面传导电子发射薄膜

器件物理及器件制备技术 | 更新时间：2020-08-12

- 纳米裂缝位置可控的表面传导电子发射薄膜
- Controllable nano-scale gap formation in surface conduction-electron emitter
- 液晶与显示 2014年29卷第6期页码：911-915
- 作者机构：
  
  西安交通大学电子物理与器件教育部重点实验室, 陕西西安 710049
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目（No.51271140，61275023）()
- DOI：10.3788/YJYXS20142906.0911
  中图分类号：
- 收稿日期：2014-04-08，
  
  修回日期：2014-04-29，
  
  网络出版日期：2014-05-01，
  
  纸质出版日期：2014-12-05
- 稿件说明：
移动端阅览
杨小艳, 沈志华, 吴胜利. 纳米裂缝位置可控的表面传导电子发射薄膜[J]. 液晶与显示, 2014,29(6): 911-915

YANG Xiao-yan, SHEN Zhi-hua, WU Sheng-li. Controllable nano-scale gap formation in surface conduction-electron emitter[J]. , 2014,29(6): 911-915
杨小艳, 沈志华, 吴胜利. 纳米裂缝位置可控的表面传导电子发射薄膜[J]. 液晶与显示, 2014,29(6): 911-915 DOI： 10.3788/YJYXS20142906.0911.

YANG Xiao-yan, SHEN Zhi-hua, WU Sheng-li. Controllable nano-scale gap formation in surface conduction-electron emitter[J]. , 2014,29(6): 911-915 DOI： 10.3788/YJYXS20142906.0911.

摘要

提出一种新型结构的表面传导电子发射导电薄膜，该导电薄膜在中间位置向内有凹陷，基于电形成过程中焦耳热引起薄膜龟裂的原理，会在凹陷附近诱导纳米级裂缝形成，控制纳米裂缝形成位置。分析了此结构导电薄膜对裂缝产生位置的影响及2种不同电形成方法对裂缝形貌的影响，测试了电子发射性能，得到了发射电流特性曲线和发光图像。实验结果表明，这种新型导电薄膜能一定程度上控制纳米裂缝的形成位置，有利于改进表面传导电子发射的均匀性，在阳极高压2.0 kV、阴极板电子发射单元施加的器件电压14 V时，新型结构导电薄膜实现了均匀发光，发射电流最大为18 A。

Abstract

A conductive film with new structure for surface conduction electron emitter is proposed in this paper. Since the specific conductive film structure is narrower in the middle part

the joule heat in this region can be larger than that in the other region. This may lead to a thermal stress concentration in the middle region

and finally cause the nano-scale fissure to be generated easily from this position. With this new conductive film structure

the formation position of the nano-scale fissure can be controlled easily. The results indicate that the nano-scale gap position formed in the conductive film can be controlled to some extent. SCEs with the specific conductive film have better uniformity compared with the SCEs with the conventional conductive film structure. For an anode voltage of 2.0 kV and a device voltage of 14 V

the emission current of the SCEs with the specific conductive film can reach 18 A.

关键词

Keywords

references

袁桃利,张方辉,张微,等. 空穴传输层对有机电致发光器件性能的影响[J]. 发光学报, 2013,34(11):1457-1461. Yuan T L, Zhang F H, Zhang W, et al.The electroluminescent performance of OLED based on different hole transport layer[J].Chinese Journal of Luminescence,2013,34(11):1457-1461.(in Chinese)[2] 刘达,龚建荣. 新世纪的主流显示技术-平板显示(FPD)技术[J]. 现代电视技术, 2003,10(4):70272. Liu D,Gong J R.The new century's mainstream display technology-Flat panel display(FPD) technology[J].Advanced Television Engineering,2003,10(4):70272.(in Chinese)[3] Elinson MI.The emission of hot electrons and the field emission of electrons from tin oxide[J].Radio Engineering and Electronic Physics,1965, 7: 1290-1296.[4] 李新贝,张方辉. 表面传导电子发射显示器件电学特性研究[J]. 液晶与显示, 2006,21(5):527-532. Li X B, Zhang F H. Electrical characteristics of surface-conduction electron-emitter display[J].Chinese Journal of Liquid Crystals and Displays,2006,21(5):527-532.(in Chinese)[5] 牟强,张方辉,费民权. 表面传导电子发射显示技术进展[J]. 液晶与显示, 2006,21(3):226-231. Mu Q, Zhang F H, Fei M Q. Development of surface conduction electron-emitter display technology[J].Chinese Journal of Liquid Crystals and Displays,2006,21(3):226-231.(in Chinese)[6] Wu C X, Xu W J, Lei X,et al.Characteristics of an electron source of a surface-conduction electron-emitter display[J].Journal of the Society for Information Display,2008, 16(5): 625-630.[7] Lo H Y, Li Y, Chao H Y,et al.Field-emission properties of novel palladium nanogaps for surface conduction electron-emitters[J].Nanotechnology,2007, 18(47): 475708(475707pp).[8] Tsai C H, Pan F M, Chen K J,et al.Nano-gap formation by palladium hydrogenation for surface conduction electron emitters fabrication[J].Applied Physics Letters,2007, 90(16): 163115(1-3).[9] Lo H Y, Li Y M, Tsai C H,et al.Effect of process variation on field emission characteristics in surface-conduction electron emitters[J].IEEE Transactions on Nanotechnology,2008, 7(4): 434-439.[10] 周子云. 表面传导电子源阵列结构设计及制备工艺研究[D].西安:西安交通大学,2012. Zhou Z Y. Study on structure design and fabrication process of surface conduction electron source array[D].Xi'an:Xi'an Jiaotong University, 2012.(in Chinese)

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

暂无数据