厚度依赖的Poly（3-hexylthiophene）光伏器件中的磁场效应

马超; 胡煜峰; 李剑焘; 侯延冰; 娄志东; 邓振波

doi:10.3788/YJYXS20142905.0692

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厚度依赖的Poly（3-hexylthiophene）光伏器件中的磁场效应

器件物理及器件制备技术 | 更新时间：2020-08-12

- 厚度依赖的Poly（3-hexylthiophene）光伏器件中的磁场效应
- Thickness dependent magnetic field effects in poly (3-hexylthiophene) photovoltaic cells
- 液晶与显示 2014年29卷第5期页码：692-696
- 作者机构：
  
  北京交通大学理学院光电子技术研究所北京,100044
- 作者简介：
- 基金信息：
  
  国家自然科学基金（No.61377028）()
- DOI：10.3788/YJYXS20142905.0692
  中图分类号： TN43
- 收稿日期：2014-03-18，
  
  修回日期：2014-04-26，
  
  网络出版日期：2014-05-02，
  
  纸质出版日期：2014-10-05
- 稿件说明：
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马超, 胡煜峰, 李剑焘, 侯延冰, 娄志东, 邓振波. 厚度依赖的Poly（3-hexylthiophene）光伏器件中的磁场效应[J]. 液晶与显示, 2014,29(5): 692-696

MA Chao, HU Yu-feng, LI Jian-tao, HOU Yan-bing, LOU Zhi-dong, DENG Zhen-bo. Thickness dependent magnetic field effects in poly (3-hexylthiophene) photovoltaic cells[J]. , 2014,29(5): 692-696
马超, 胡煜峰, 李剑焘, 侯延冰, 娄志东, 邓振波. 厚度依赖的Poly（3-hexylthiophene）光伏器件中的磁场效应[J]. 液晶与显示, 2014,29(5): 692-696 DOI： 10.3788/YJYXS20142905.0692.

MA Chao, HU Yu-feng, LI Jian-tao, HOU Yan-bing, LOU Zhi-dong, DENG Zhen-bo. Thickness dependent magnetic field effects in poly (3-hexylthiophene) photovoltaic cells[J]. , 2014,29(5): 692-696 DOI： 10.3788/YJYXS20142905.0692.

摘要

对poly（3-hexylthiophene）（P3HT）光伏器件产生正、负向磁场效应的原因进行了研究。制作了不同活性层厚度的光伏器件，光电流的磁场效应对厚度的依赖非常明显：在活性层厚度为44 nm时，有2.8%的正效应；当活性层厚度提高为105 nm时，磁场效应变为负值（-5.2%）。为了研究产生这种效应的原因，制备了1-（3-methyloxycarbonyl）propyl-1-phenyl C61（PCBM）与P3HT共混的器件。在共混器件中，磁场效应随着PCBM比例的提升而逐渐下降直至湮灭且磁场效应不再随活性层厚度发生变化。磁场效应的产生源于磁场可以调控单线态和三线态激子的比例，进而调节单线态激子主导的激子分离作用和三线态激子主导的激子-电荷分离作用。实验结果显示出在纯P3HT光伏器件中，当PCBM加入到活性层中时，大量激子在给受体界面处分离成为自由载流子，单线态和三线态激子都可以高效地通过激子分离使光电流增强，激子比例不再影响光电流大小，所以磁场效应逐渐消失且对活性层厚度失去依赖。

Abstract

The positive and negative magnetoresistance in poly(3-hexylthiophene) (P3HT) photovoltaic cells are demonstrated by adjusting the thickness of the P3HT layer. It is found that the magnetoresistance of the photocurrent is thickness dependent in P3HT devices: the measured magnetoresis-tance in 44 nm-thick P3HT devices is 2.8% while a sign change could be observed in 105 nm-thick P3HT devices (-5.2%). We fabricated the 1-(3-methyloxycarbonyl)propyl-1-phenyl C61(PCBM) and P3HT blended films with different proportions and the resulting devices exhibit the gradually decreased magnetoresistance with increasing the PCBM ratio. The magnetic field could change the ratio of the singlets and triplets

then affect the exciton-dissociation and exciton-charge reaction. When the PCBM is blended

the excitons dissociate into free carriers at accept-donor interfaces effectively

the ratio of the singlets and triplets would not affect the photocurrent any more

since they both can be contribute to the photocurrent by dissociation.

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references

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