Mg含量对MgZnO薄膜光学性质的影响

高丽丽; 徐莹; 张淼; 张跃林; 姚斌

doi:10.3788/YJYXS20142903.0350

您当前的位置：

首页 >

文章列表页 >

Mg含量对MgZnO薄膜光学性质的影响

材料物理和化学 | 更新时间：2020-08-12

- Mg含量对MgZnO薄膜光学性质的影响
- Effects of Mg content on the optical properties of MgZnO fims
- 液晶与显示 2014年29卷第3期页码：350-354
- 作者机构：
  
  1. 北华大学物理学院,吉林吉林,132013
  2. 吉林大学物理学院,吉林长春,130012
- 作者简介：
- 基金信息：
  
  国家自然科学基金资助项目（No.11274135）();吉林省教育厅&ldquo();十二五&rdquo();科学技术研究项目（No.2013189）()
- DOI：10.3788/YJYXS20142903.0350
  中图分类号： O472
- 收稿日期：2014-03-01，
  
  修回日期：2014-04-15，
  
  纸质出版日期：2014-04-25
- 稿件说明：
移动端阅览
高丽丽, 徐莹, 张淼, 张跃林, 姚斌. Mg含量对MgZnO薄膜光学性质的影响[J]. 液晶与显示, 2014,29(3): 350-354

GAO Li-li, XU Ying, ZHANG Miao, ZHANG Yue-lin, YAO Bin. Effects of Mg content on the optical properties of MgZnO fims[J]. , 2014,29(3): 350-354
高丽丽, 徐莹, 张淼, 张跃林, 姚斌. Mg含量对MgZnO薄膜光学性质的影响[J]. 液晶与显示, 2014,29(3): 350-354 DOI： 10.3788/YJYXS20142903.0350.

GAO Li-li, XU Ying, ZHANG Miao, ZHANG Yue-lin, YAO Bin. Effects of Mg content on the optical properties of MgZnO fims[J]. , 2014,29(3): 350-354 DOI： 10.3788/YJYXS20142903.0350.

摘要

利用射频磁控溅射技术，高纯的氩气作为溅射气体，分别选用不同Mg含量的Mg

陶瓷靶材，在石英衬底上生长六角纤锌矿结构的Mg

薄膜，并对薄膜进行了后期热退火处理。研究了Mg含量对Mg

O薄膜光学性质的影响。实验结果显示，随着Mg含量的增加，薄膜的带隙变宽；光致发光光谱中近带边发射中心蓝移，近带边紫外发射与可见光区深能级发射强度比值减小，发光质量下降；拉曼光谱仍然保持着ZnO的拉曼振动模式，但随着Mg含量的增加，E

high

振动峰逐渐展宽，峰型对称性变差。分析表明，随着Mg的合金化，薄膜中产生了更多的杂质缺陷，结晶质量下降。

Abstract

Using 99.99% pure argon as sputtering gas

MgZnO films with wurtzite structure were prepared on quartz substrate by radio frequency magnetron sputtering technique with MgZnO targets of different Mg content and then annealed under 10

-4

Pa in a tube furnace.Effects of Mg content on the optical properties of these films were studied. The results indicated that

with the Mg content increasing

the band gap increased and the near-bind-edge emission peaks occured blue shift in room photoluminescence spectra

and the intensity ratio between the ultraviolet near-edge emission and the visible deep energy level emission was reduced

which was accompanied by the decline in the quality of luminance lighting. Raman spectra of Mg

agreed well with the wurtzite ZnO vibration modes

without any new bands arising from Mg substitution. The E

high

Raman peaks were markedly broadened and the symmetry was altered upon Mg substitution. It indicated that the more compositional disorder defects were introduced in the Mg

films with the increase of Mg content

and the quality of crystal degraded.

关键词

Keywords

references

Bagnall D M,Chen Y F,Zhu Z,et al.Optically pumped lasing of ZnO at room temperature [J].Appl.Phys.Lett.,1997,70(17): 2230-2232.[2] Tang Z K,Wong G K L,Yu P,et al.Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films [J].Appl. Phys. Lett.,1998,72(25): 3270-3272.[3] 范希武. 宽带Ⅱ-Ⅵ族半导体及其低维度结构的生长和光学性质研究进展[J]. 发光学报, 2002,23(4): 317-329. Fan X W.Research progress on growth and optical properties of wide band gap Ⅱ-Ⅵ compound semiconductors and its low dimensional structure [J].Chin.J.Lumin.,2002,23(4): 317-329. ( in Chinese)[4] 苏晶,刘玉荣,莫昌文,等. ZnO基薄膜晶体管有源层制备技术的研究进展[J]. 液晶与显示, 2013,28(3):315-322. Su J,Liu Y R,Mo C W, et al.Research Development on preparation technologies of active layer preparation of ZnO-based thin film [J].Chinese Journal of Liquid Crystals and Displays,2013,28(3):315-322.(in Chinese)[5] 申德振,梅增霞, 梁会力, 等. 氧化锌基材料、异质结构及光电器件[J]. 发光学报, 2014,35(1):1-60. Shen D Z,Mei Z X, Liang H L,et al.ZnO-based material , heterojunction and photo-electronic device [J].Chin.J.Lumin.,2014,35(1):1-60.(in Chinese)[6] Tsukazaki A,Ohtomo A,Onuma T,et al.Repeated temperature modulation epitaxy for p-type doping and light-emitting diode based on ZnO [J].Nat.Mater.,2005,4(1): 42-46.[7] Look D C.Recent advances in ZnO materials and devices [J].Mater.Sci.Eng.B,2001,80(1-3):83-87.[8] 庞海霞,刘长珍,谢安,等. 热处理温度对片状ZnO晶体结构和光学性质的影响 [J]. 液晶与显示, 2012,27(2):158-162. Pang H X, Liu C Z,Xie A,et al.Effect of annealing temperature on structure and optical properties of sheet-like ZnO crystals [J].Chinese Journal of Liquid Crystals and Displays,2012,27(2):158-162.(in Chinese)[9] Shao-Tzu Lien, Hsin-Chieh Li, Yao-Jhen Yang,et al.Atmospheric pressure plasma jet annealed ZnO films for mgzno/zno heterojunctions [J].J. Phys. D: Appl. Phys,2013,46(7):075202.[10] Mohanta S K,Nakamura A,Temmyo J. Synthesis and characterization of N,in Co-doped MgZnO films using remote-plasma-enhanced metalorganic chemical vapor deposition [J].Journal of Crystal Growth,2013, 375: 1-5.[11] Jui-Fen Chien,Huan-Yu Shih,Hua-Yang Liao.P-type conductivity of MgZnO:(N:Ga) thin films prepared by remote plasma in-situ atomic layer doping [J].ECS J.Solid State Sci.Technol,2013, 2(11): R249-R253.[12] Ohtomo A,Kawasaki M,T Koida,et al.MgxZn1-xO as a Ⅱ-Ⅵ wide gap semiconductor alloy [J].Appl.Phys.Lett.,1998,72( 19): 2466-2468.[13] Choopun S, Vispute R D, Yang W,et al.Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films [J].Appl.Phys.Lett.,2002, 80(9): 1529-1531.[14] Li Y F, Yao B, Lu Y M,et al.Realization of p-type conduction in undoped MgxZn1-xO thin films by controlling Mg content [J]. Appl. Phys. Lett.,2007, 91(2): 232115.[15] 王伟娜,方庆清,周军,等. 制备工艺对MgxZn1-xO薄膜结构及光学性能的影响[J]. 物理学报, 2009,58(5):3461-3467. Wang W N, Fang Q Q, Zhou J,et al.Influence of fabrication technique on structure and photoluminescence of Zn1-xMgxO thin films [J].Acta Physica Sinica,2009,58(5):3461-3467.(in Chinese)[16] Cho S, Ma J, Kim Y,et al.Photoluminescence and ultraviolet lasing of Polycrystalline Zno thin films Prepared by the oxidation of the metallic Zn [J].Appl. Phys. Lett.,1999, 75(18): 2761-2763.[17] Reynolds D C, Look D C, Jogni B,et al.Similarities in the bandage and deep-center photoluminescence of ZnO and GaN [J].Solid State Commun.,1997, 101(9): 643-646.[18] Vanheusden K, Warren W L, Seager C H,et al.Mechanisms behind green photoluminescence in ZnO phosphor powders [J].J. Appl. Phys.1996, 79(10): 7983-7990.[19] Bylander E G, Surface effects on the low-energy cathodoluminescence of zinc Oxide [J].J. Appl. Phys.,1978, 49(3): 1188-1195.[20] Calleja J M, Cardona M. Resonant raman scattering in ZnO [J].Phys. Rev. B,1977, 16(8): 3753-3761.[21] Decremps F, Pellicer-Porres J, Saitta A M,et al. High-pressure Raman spectroscopy study of Wurtzite ZnO [J].Phys.Rev.B,2002, 65(9): 092101.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

N掺杂MgZnO薄膜的p型导电稳定性研究

N掺杂p型MgZnO薄膜的制备与性能研究