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江南大学 物联网工程学院 轻工过程先进控制教育部重点实验室,江苏 无锡,214122
收稿日期:2013-11-14,
修回日期:2013-12-24,
纸质出版日期:2014-03-05
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滕支刚, 冷华星, 张玲珑, 钟传杰. 退火时间对溶液法制备Tips-Pentacene电流传输特性的影响[J]. 液晶与显示, 2014,29(2): 219-223
TENG Zhi-gang, LENG Hua-xing, ZHANG Ling-long, ZHONG Chuan-jie. Influence of annealing time on charge transport properties in solution-processed tips-pentacene[J]. , 2014,29(2): 219-223
滕支刚, 冷华星, 张玲珑, 钟传杰. 退火时间对溶液法制备Tips-Pentacene电流传输特性的影响[J]. 液晶与显示, 2014,29(2): 219-223 DOI: 10.3788/YJYXS20142902.0219.
TENG Zhi-gang, LENG Hua-xing, ZHANG Ling-long, ZHONG Chuan-jie. Influence of annealing time on charge transport properties in solution-processed tips-pentacene[J]. , 2014,29(2): 219-223 DOI: 10.3788/YJYXS20142902.0219.
通过测量p+Si/PEDOT:PSS/Tips-PEN/Ag器件的
J
-
V
特性,研究了退火时间对溶液法制备Tips-PEN薄膜电流传输特性的影响。实验结果表明,在退火时间为2 h和5 h的条件下,随偏置电压的增加,双对数
J
-
V
曲线存在斜率依次为2,大于3以及2的不同区域,而在退火时间达到10 h后,低电压下斜率为2的区域消失。根据空间电荷限制电流模型,分析了不同区域的电流传输机理,并提取了陷阱密度和空穴的迁移率。在退火时间为10 h时,材料有最低的陷阱密度5.7010
18
/cm
3
和最大的空穴迁移率1.6810
-4
cm
2
/(Vs),其在低偏置下传输特征的改变表明与溶剂残留有关的单一能级陷阱极大减小。
The influence of annealing time on charge transport properties of solution-processed Tips-Pentacene was investigated by the measured
J
-
V
property of p+Si/PEDOT:PSS/Tips-PEN/Ag.The results show that with the increasing bias voltage
the
J
-
V
curves of the devices annealed for 2 and 5 h in double-logarithmic scale exist different regions
where slopes are 2
larger than 3 and 2 successively
but the curve of the device annealed for more than 10 h doesn't have initial region with the slope equal to 2.Using Space Charge Limited Current model
charge transport mechanisms in different regions were analyzed
and the hole trap densities and mobilities were extracted. Annealed for more than 10 h
material has the lowest trap density of 5.7010
18
/cm
3
and the maximum hole mobility of 1.6810
-4
cm
2
/(Vs). Meanwhile
the transport mechanism of the material annealed for more than 10 h changing shows that the single trap density
relevant to solvent residues
deduces considerably.
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