TU D W, WU R M,YANG H L,et al. Effect of optical structure on output light intensity distribution in LED package [J]. Optical and Precision Engineering, 2008, 16(5):832-838.[2] Schineller B, Junas Y, Heuken M, et al. Investigation of process technologies for the fabrication of AlGaInP mesa ultra high brightness light emitting diode[J]. Materials Science and Engineering, 1988, B51:34-38.[3] Robinson Kevin. Blue LEDs open door to microdisplays [J]. Photonics Spectra,2001, 35:43-44.[4] Choin H W, Jeon C W, Dawson M D. Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique [J]. J. Crystal Growth, 2004, 268:527-530.[5] Geib K M, Choquette K D, Serkland D K, et al. Fabrication and performance of two-dimensional matrix addressable arrays of integrated vertical-cavity lasers and resonant cavity photodetectors [J]. IEEE Journal of Selected Topics in Quantum Electronics, 2002, 8(4):943-94.[6] Jin S X, Li J, Lin J Y, et al. InGaN/GaN quantum well interconnected micro disk light emitting diodes [J]. Appl. Phys. Lett, 2000, 77(20):3236-3238.[7] Poher V, Grossman N, Kennedy G T, et al. Micro-LED arrys:A tool for two-dimentional neuron stimulation [J]. Phys. D:Appl. Phys.,2008, 41:094014(1-9).[8] Naresh C, Monica T L, Kimberley A O, et al. Flip chip bonding of 6868 MWIR LEd arrays [J]. IEEE Trans. Adv. Packaging, 2009, 32(1):9-13.[9] 尹悦,梁静秋,梁中翥,等. 一种LED阵列微显示器件的设计 [J]. 光学 精密工程, 2011,19(12):159-164.[10] 尹悦,梁静秋,梁中翥,等.电极结构对AlGaInP-LED阵列电流分布的影响 [J]. 发光学报, 2011,32(10):59-64.[11] 王国宏,马晓宇,王树堂,等.AlGaInP橙色发光二极管的发展 [J]. 半导体技术, 1988,23(4):10-12.[12] 梁静秋,李佳, 王维彪. AlGaInP-LED阵列的设计与制作 [J]. 液晶与显示, 2006,21(6):604-608.[13] Chang S J, Chang C S, Su Y K, et al. Chirped GaAs-AlAs distributed bragg refelectors forhigh brightness yellow-green light-emitting diodes [J]. IEEE Photonics Technology Letters,1997, 9(2):182-184.[14] 林岳明, 张俊兵,曾祥华. AlGaInP LED出光效率的模拟 [J]. 发光学报, 2009,30(2):201-208.[15] 余怀之. 红外光学材料 [M].北京:国防工业出版社,2007:13.[16] 钟迪生. 真空镀膜-光学材料的选择与应用 [M].沈阳:辽宁大学出版社,2001:26.