SiNx：H薄膜沉积条件变更对TFT特性的影响

李婧; 张金中; 谢振宇; 阎长江; 陈旭; 闵泰烨

doi:10.3788/YJYXS20132804.0547

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SiN_x：H薄膜沉积条件变更对TFT特性的影响

器件物理及器件制备技术 | 更新时间：2020-08-12

- SiN_x：H薄膜沉积条件变更对TFT特性的影响
- Deposition Condition Effects of SiN_x：H film on TFT Characteristics of a-Si TFT
- 液晶与显示 2013年28卷第4期页码：547-551
- 作者机构：
  
  北京京东方光电科技有限公司北京,100176
- 作者简介：
- 基金信息：
  
  京东方研发基金(No.10D_HP_TFT)()
- DOI：10.3788/YJYXS20132804.0547
  中图分类号： O753+.2
- 收稿日期：2012-11-09，
  
  修回日期：2013-01-30，
  
  纸质出版日期：2013-08-15
- 稿件说明：
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李婧, 张金中, 谢振宇, 阎长江, 陈旭, 闵泰烨. SiNx：H薄膜沉积条件变更对TFT特性的影响[J]. 液晶与显示, 2013,28(4): 547-551

LI Jing, ZHANG Jin-zhong, XIE Zhen-yu, YAN Chang-jiang, CHEN Xu, MIN Tai-ye. Deposition Condition Effects of SiNx：H film on TFT Characteristics of a-Si TFT[J]. , 2013,28(4): 547-551
李婧, 张金中, 谢振宇, 阎长江, 陈旭, 闵泰烨. SiNx：H薄膜沉积条件变更对TFT特性的影响[J]. 液晶与显示, 2013,28(4): 547-551 DOI： 10.3788/YJYXS20132804.0547.

LI Jing, ZHANG Jin-zhong, XIE Zhen-yu, YAN Chang-jiang, CHEN Xu, MIN Tai-ye. Deposition Condition Effects of SiNx：H film on TFT Characteristics of a-Si TFT[J]. , 2013,28(4): 547-551 DOI： 10.3788/YJYXS20132804.0547.

摘要

利用等离子化学气相沉积法连续制备SiN

:H和a-Si:H薄膜。通过电学、光学、力学测试研究了SiN

:H薄膜沉积条件对其界面性能的影响。研究结果表明

过度的富硅化将显著增大体系的界面态

严重影响器件的TFT特性。当SiH

和NH

气体流量比值为7:15时

开关比(

off

)可达3.2410

。适当增加功率同样可以提高

但高于31.5 W/cm

后

只会严重地增大薄膜的应力。优化SiN

:H的沉积参数

开关比可以提高5.5倍。

Abstract

SiN

:H and a-SiN:H thin films were prepared by plasma enhanced chemical vapor deposition system. This paper investigated the effect of deposition condition of SiN

:H film on the interfacial properties of a-SiN:H/SiN

:H films

which was characterized by electrical

optical and mechanical measurements. The results showed that excessive silicon could increase interface-state density significantly

which damaged performance of TFT characte-ristics. On/Off current ratio of a-Si TFT was up to 3.2410

when the ratio of the SiH

and NH

gas mass flow rate was 7:15. When the power density was increased above 31.5 W/cm

its influence on the electrical property of LCD devices would become weak; meanwhile

the stress was significantly increased. On/Off current ratio was increased by 5.5 times by using optimized parameters of SiN

:H thin film.

关键词

Keywords

references

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