表面修饰制备高性能薄膜晶体管

林广庆; 李鹏; 王明晖; 冯翔; 张俊; 熊贤风; 邱龙臻; 吕国强

doi:10.3788/YJYXS20132804.0490

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表面修饰制备高性能薄膜晶体管

材料物理和化学 | 更新时间：2020-08-12

- 表面修饰制备高性能薄膜晶体管
- Preparation of High-Performance Organic Thin-Film Transistor Through Surface Modification
- 液晶与显示 2013年28卷第4期页码：490-494
- 作者机构：
  
  1. 特种显示技术教育部重点实验室,特种显示技术国家工程实验室,现代显示技术省部共建国家重点实验室培育基地, 合肥工业大学光电技术研究院,安徽合肥,230009
  2. 合肥工业大学化学工程学院,安徽合肥,230009
  3. 合肥工业大学仪器科学与光电工程学院,安徽合肥,230009
- 作者简介：
- 基金信息：
  
  973"();计划前研专项(No.2012CB723406)();国家自然科学基金(No.21174036,51103034)();教育部博士点基金 (No.2
- DOI：10.3788/YJYXS20132804.0490
  中图分类号： TN321+.52
- 收稿日期：2013-03-06，
  
  修回日期：2013-04-05，
  
  纸质出版日期：2013-08-15
- 稿件说明：
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林广庆, 李鹏, 王明晖, 冯翔, 张俊, 熊贤风, 邱龙臻, 吕国强. 表面修饰制备高性能薄膜晶体管[J]. 液晶与显示, 2013,28(4): 490-494

LIN Guang-qing, LI Peng, WANG Ming-hui, FENG Xiang, ZHANG Jun, XIONG Xian-feng, QIU Long-zhen, LV Guo-qiang. Preparation of High-Performance Organic Thin-Film Transistor Through Surface Modification[J]. , 2013,28(4): 490-494
林广庆, 李鹏, 王明晖, 冯翔, 张俊, 熊贤风, 邱龙臻, 吕国强. 表面修饰制备高性能薄膜晶体管[J]. 液晶与显示, 2013,28(4): 490-494 DOI： 10.3788/YJYXS20132804.0490.

LIN Guang-qing, LI Peng, WANG Ming-hui, FENG Xiang, ZHANG Jun, XIONG Xian-feng, QIU Long-zhen, LV Guo-qiang. Preparation of High-Performance Organic Thin-Film Transistor Through Surface Modification[J]. , 2013,28(4): 490-494 DOI： 10.3788/YJYXS20132804.0490.

摘要

应用聚苯乙烯/氯硅烷复合材料作为栅绝缘层的界面修饰层制备了高性能的并五苯场效应晶体管。原子力显微镜观察发现

界面修饰对并五苯半导体薄膜的生长形貌产生了很大影响。在空白二氧化硅上沉积的并五苯晶粒尺寸都小于150 nm

而在修饰过后二氧化硅的表面生长的并五苯晶粒尺寸多在200~400 nm。大的晶粒尺寸能够减小晶粒间的界面

从而有效提高电学性能。表面改性的并五苯场效应晶体管的关态电流约为10

-10

电流的开关比超过10

最大场效应迁移率约可达1.23 cm

-1

而未处理的晶体管的场效应迁移率仅有0.011 8 cm

-1

。

Abstract

High-performance pentacene organic thin film Transistor (OTFT) with interface modification layer of polystyrene/chlorosilane composite material was developed. The AFM images show that the growth morphology of pentacene semiconductor film was affected by interface modification. The pentacene grains grown on modified SiO

substrates with dimensions in the range of 200~400 nm are larger than those grown on bare SiO

substrates which have sizes less than 150 nm. Large particle size can reduce intergranular interface so as to improve the electrical performance. The output and transfer curve

on/off current ratio

threshold voltage and field-effect mobility of the device were obtained by electric measurements. The transfer curve showed an on/off current ratio exceeding 10

with the off-current of about 10

-10

A. The device with interface modification has a maximum field-effect mobility of up to 1.23 cm

-1

compared to the 0.0118 cm

-1

of OTFT on bare SiO

substrate.

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Keywords

references

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