Tips-Pentacene OTFT电极接触电阻的研究

刘欢; 余屯; 邱禹; 钟传杰

doi:10.3788/YJYXS20132802.0210

您当前的位置：

首页 >

文章列表页 >

Tips-Pentacene OTFT电极接触电阻的研究

器件物理及器件制备技术 | 更新时间：2020-08-12

- Tips-Pentacene OTFT电极接触电阻的研究
- Contact Resistance of Electrodes in Tips-Pentacene OTFTs
- 液晶与显示 2013年28卷第2期页码：210-214
- 作者机构：
  
  江南大学电子工程系轻工过程先进控制教育部重点实验室,江苏无锡,214122
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目(No.60776056)();江南大学研究生"();创新计划"();项目()
- DOI：10.3788/YJYXS20132802.0210
  中图分类号： TN321+.5
- 收稿日期：2012-10-28，
  
  修回日期：2012-12-25，
  
  纸质出版日期：2013-04-15
- 稿件说明：
移动端阅览
刘欢, 余屯, 邱禹, 钟传杰. Tips-Pentacene OTFT电极接触电阻的研究[J]. 液晶与显示, 2013,28(2): 210-214

LIU Huan, YU Tun, QIU Yu, ZHONG Chuan-jie. Contact Resistance of Electrodes in Tips-Pentacene OTFTs[J]. , 2013,28(2): 210-214
刘欢, 余屯, 邱禹, 钟传杰. Tips-Pentacene OTFT电极接触电阻的研究[J]. 液晶与显示, 2013,28(2): 210-214 DOI： 10.3788/YJYXS20132802.0210.

LIU Huan, YU Tun, QIU Yu, ZHONG Chuan-jie. Contact Resistance of Electrodes in Tips-Pentacene OTFTs[J]. , 2013,28(2): 210-214 DOI： 10.3788/YJYXS20132802.0210.

摘要

采用转移线性法分析了以PVP为栅绝缘层、以Tips-pentacene为有源层的有机薄膜晶体管(OTFT)电极与有源层间的接触电阻

其中介电层和有源层均采用旋涂法制备

银电极采用喷墨印刷法制备。沟道长度分别取200

250

300 m和400 m

有源层退火时间分别为2 h

6 h和10 h

提取到的3种不同退火时间的OTFT的接触电阻分别为8 M

4.5 M和3 M

退火10 h的OTFT的接触电阻较小主要是因为较长时间的退火使得Tips-pentacene有源层中的杂质较少

电极和有源层之间的接触势垒较小。

Abstract

This paper analyzed the contact resistance between inkjet-printed silver source/drain (S/D) electrodes and organic semiconductor layer of Organic Thin-film Transistors(OTFTs) using transmission line method(TLM). Spin-coated PVP thin-film and Tips-pentacene thin-film were used as gate dielectric layer and semiconductor layer

respectively. S/D electrodes with four different channel lengths of 200

250

300 m and 400 m were inkjet-printed

and the annealed time of different semiconductor layers was 2 h

6 h and 10 h

respectively. The extracted contact resistances were 8 M

4.5 M and 3 M for OTFTs with three different kinds of annealed time

respectively. Lower contact resistance for OTFTs with annealed time of 10 h can be explained by the fact that longtime annealing can reduce the impurity in the semiconductor layer and lower the contact barrier between electrodes and semiconductor layer.

关键词

Keywords

references

Lee S H, Choi M H, Han S H, et al. High-performance thin-film transistor with 6,13-Bis (triisopropylsilylet-hynyl) pentacene by iinkjet printing [J]. Organic Electronics, 2008, 9(5):721-726.[2] Tao C L, Zhang X H, Zhang F J, et al. Solution processed pentacene thin films and their structural properties [J]. Materials Science and Engineering B, 2007, 140(1-2):1-4.[3] Choi M H, Jang J. Effect of SAM layer on bias-stability of inkjet printed TIPS pentacene thin-film transistor [J]. Current Appl. Phys., 2012, 12(1):e6-e9. [4] 洪飞,谭莉,朱棋锋,等,高性能顶栅结构有机薄膜晶体管 [J].液晶与显示,2012,27(3):313-317.[5] 冯魏良,黄培. 柔性显示衬底的研究及进展[J].液晶与显示,2012,27(5):599-607.[6] 陈世琴,陈梦婕,邱龙臻. 石墨烯电极有机薄膜晶体管研究[J].液晶与显示,2012,27(5):595-598.[7] Chung S J, Jang J S, Cho J H, et al. All-inkjet-printed organic thin-film transistors with silver gate, source/drain electrodes [J]. Japanese J. Appl. Phys., 2011,50(3):03CB05(1-5).[8] Peter V N, Michael S S, David J G, et al. Contact resistance extraction in pentacene thin film transistors [J]. Solid-State Electronics, 2003, 47(2):259-262.[9] Chen J H, Chee K T, Max S, et al. Controlled solution deposition and systematic study of charge-transport anisotropy in single crystal and single-crystal textured TIPS pentacene thin films [J]. Organic Electronics, 2009,10(4):696-703.[10] Graciela B B, Fincher C R, Michael L. Contact resistance in organic thin film transistors [J]. Appl. Phys. Lett., 2004, 84(2):296-298.[11] Sung K P, Thomas N J, John E A. High mobility solution processed 6,13-bis(triisopropyl-silylethynyl) pentacene organic thin film transistors [J]. Appl. Phys. Lett., 2007, 91(6):063514(1-3).[12] Rhee S W, Yun D J. Metal-semiconductor contact in organic thin film transistors [J]. J. Materials Chem., 2008, 18: 5437-5444.[13] Chung S J, Jeong J W, Kim D Y,et al. Contact resistance of inkjet-printed silver source-drain electrodes in bottom-contact OTFTs [J]. J. Display Technology, 2012, 8(1):48-53.[14] Choi K N, Kim K S, Chung K S, et al. Solvent effect on the electrical properties of triisopropylsilylethynyl (TIPS) pentacene organic thin-film transistors [J]. Device and Materials Reliability, 2009, 9(3):489-493.[15] Islam M N, Mazhari B. An analytical model for current crowding and source contact resistance in Top-contact organic thin-film transistors [J]. Semiconductor Science and Technology, 2008, 23(12):1-8.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

ITO连接过孔电阻定量计算与设计方法

低LUMO/HOMO共轭聚合物的制备及其电子传输性能

LTPS TFT层间绝缘层过孔刻蚀的工艺优化

未退火InGaZnO作为缓冲层的InGaZnO薄膜晶体管性能研究

聚合物薄膜晶体管制备条件对其性能影响分析