IGZO TFT与ZnO TFT的性能比较

吴为敬; 颜骏; 许志平; 赖志成

doi:10.3788/YJYXS20112602.0147

您当前的位置：

首页 >

文章列表页 >

IGZO TFT与ZnO TFT的性能比较

器件制备技术及器件物理 | 更新时间：2020-08-12

- IGZO TFT与ZnO TFT的性能比较
- Property Comparison Between IGZO TFT and ZnO TFT
- 液晶与显示 2011年26卷第2期页码：147-153
- 作者机构：
  
  华南理工大学材料科学与工程学院,广东广州,510641
- 作者简介：
  
  [ "吴为敬(1979-),男,福建福州人, 工学博士,讲师,主要从事低温多晶硅薄膜晶体管特性及TFT阵列的研究。" ]
- 基金信息：
  
  中央高校基本科研业务费专项资金资助(No.2009ZM0205)()
- DOI：10.3788/YJYXS20112602.0147
  中图分类号： TN321+.5
- 收稿日期：2010-09-29，
  
  修回日期：2010-10-29，
  
  网络出版日期：2011-04-06，
  
  纸质出版日期：2011-04-06
- 稿件说明：
移动端阅览
吴为敬, 颜骏, 许志平, 赖志成. IGZO TFT与ZnO TFT的性能比较[J]. 液晶与显示, 2011,26(2): 147-153

WU Wei-jing, YAN Jun, XU Zhi-ping, LAI Zhi-cheng. Property Comparison Between IGZO TFT and ZnO TFT[J]. , 2011,26(2): 147-153
吴为敬, 颜骏, 许志平, 赖志成. IGZO TFT与ZnO TFT的性能比较[J]. 液晶与显示, 2011,26(2): 147-153 DOI： 10.3788/YJYXS20112602.0147.

WU Wei-jing, YAN Jun, XU Zhi-ping, LAI Zhi-cheng. Property Comparison Between IGZO TFT and ZnO TFT[J]. , 2011,26(2): 147-153 DOI： 10.3788/YJYXS20112602.0147.

摘要

分析比较了ZnO TFT与IGZO TFT的主要光电学特性以及阈值电压稳定性。结果表明:ZnO薄膜与IGZO薄膜在可见光波长范围内都有着较高的光学透过率;在同等制备条件下

IGZO TFT器件的场效应迁移率、开关电流比、阈值电压及亚阈值系数等方面的特性均明显好于ZnO TFT;二者都有着较低的泄漏电流

并且差别很小。另外

ZnO TFT在正负偏压下阈值电压都有漂移

而IGZO TFT在正偏压下阈值电压漂移比ZnO TFT的小且在负偏压下阈值电压没有漂移

由此可见IGZO TFT比 ZnO TFT有着更好的稳定性。总之

IGZO 薄膜比ZnO薄膜更适合作为下一代TFT的有源层材料。

Abstract

This paper focuses on the comparison and analysis of ZnO TFTs and IGZO TFTs optical and electrical performance

and the stability of threshold voltage. The comparison results indicate that both ZnO and IGZO thin film materials have a simply high optical transmittance in the range of visible spectrum. Furthermore

the key electrical properties of IGZO TFT are better than that of ZnO TFT under the same deposition condition

such as the field effect mobility

the on/off ratio

the threshold voltage and the subthreshold slope. The leakage current of both ZnO TFT and IGZO TFT is low

and the difference between them is rather small. In addition

the threshold voltage of ZnO TFT is shifted under the positive or negative gate bias stress. However

the threshold voltage shift of IGZO TFT is smaller than that of ZnO TFT

and there is no threshold voltage shift for IGZO TFT under the negative gate bias stress. Therefore

IGZO TFT is more stable than ZnO TFT. In conclusion

IGZO thin film material is more suitable to be the active layer of the next generation of TFTs.

关键词

Keywords

references

Kelly P J, Zhou Y, Postill A. A novel technique for the deposition of aluminium-doped zinc oxide films [J].Thin Solid Films, 2003, 426(1):111-116.[2] 叶志镇,吕建国,张银珠,等. 氧化锌半导体材料掺杂技术与应用 [M]. 杭州:浙江大学出版社,2009.[3] Chen G Y, Zheng K B, Mo X L, et al. Metal-free indoline dye sensitized zinc oxide nanowires solar cell [J].Materials Letters, 2010, 64(12):1336-1339.[4] Polyakov A Y, Smirnov N B, Govorkov A V, et al. Hydrogen plasma treatment effects on electrical and optical properties of n-ZnO [J].J. Appl. Phys., 2003, 94(1):400-406.[5] Kim S, Song I, Park Y, et al. Channel layer used for manufacturing thin film transistor used as switching device or driving device for flat panel display device such as liquid crystal display apparatus, comprises indium zinc oxide doped with transition metal,USA:US2009001432-A1 . 2009-01-01.[6] 刘延辉, 曾大文, 王辉虎, 等. 热氧化纳米Zn制备ZnO厚膜及其气敏特性的研究 [J]. 传感技术学报, 2005, 18(3):43-46.[7] 赵鸣, 王卫民, 张昌松,等. ZnO低压压敏电阻陶瓷材料研究进展 [J]. 材料科学与工程学报, 2005, 23(6):915-918.[8] Ohta H, Kawamura K I,Orita M, et al. Current injection emission fom a transparent p-n junction composed of p-SrCu2O2/n-ZnO [J]. Appl. Phys. Lett., 2000, 77(4):475-477.[9] Natsume Y, Sakata H. Electrical and optical properties of zinc oxide films post-annealed in H2 after fabrication by sol-gel process [J].Materials Chem. and Phys., 2003, 78(1):170-176.[10] Hoffman R L, Norris B J, Wager J F. ZnO-based transparent thin-film transistors [J].Appl. Phys. Lett., 2003, 82(5):733-735.[11] Carcia P F, McLean R S, Reilly M H, et al. Transparent ZnO thin-film transistor fabricated by rf magnetron sputtering [J].Appl. Phys. Lett., 2003, 82 (7):1117-1119.[12] Hossain F M, Nishii J, Takagi S, et al. Modeling and simulation of polycrystalline ZnO thin-film transistors [J].J. Appl. Phys., 2003, 94(12):7768-7777.[13] Wu I W. Outlook of low temperature poly silicon (LTPS) technology for information display and beyond //The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, Tucson,USA: IEEE,2003:882-883.[14] Liu D N, Yeh Yung-Hui, Chiou Hwa-Liang. Development of low temperature p-Si TFT-LCD //The 17th Annual Meeting of the IEEE Lasers and Electro-Optics Society, Rio Grande, Puerto Rico: IEEE,2004:182-183.[15] Nichols J A, Jackson T N, Lu M H, et al. a-Si ∶ H TFT phosphorescent OLED active matrix pixels fabricated on polymeric substrates //The 62nd DRC: Device Research Conference, Notre Dame,USA: IEEE, 2004:59-60.[16] Sambandan S, Striakhilev D, Nathan A. Device and circuit level optimization for high performance a-Si ∶ H TFT-based AMOLED displays [J].J. Display Technology, 2006, 2(1):52-59.[17] 程松华,曾祥斌. ZnO基薄膜晶体管的研究 [J]. 液晶与显示, 2006, 21(5):515-520.[18] Carcia P F, McLean R S, Reilly M H,et al. ZnO thin film transistors for flexible electronics [J]. Mat. Res. Soc. Symp. Proc., 2003, 769(H7.2):1-6.[19] Fortunato E, Barquinha P, Pimentel A, et al. Recent advances in ZnO transparent thin film transistors [J].Thin Solid Films, 2005, 487(1-2):205-211.[20] Park S H K, Hwang C S. Transparent ZnO thin film transistor array for the application of transparent AM-OLED display //SID 06 Digest, San Francisco, USA: SID, 2006:25-28.[21] 王中健,王龙彦,马仙梅,等. 透明非晶态氧化物半导体薄膜晶体管的研究进展 [J]. 液晶与显示, 2009, 24(2):210-216.[22] Han D D, Wang Y, Zhang S D, et al. Fabrication and characteristics of ZnO-based thin film transistors //The 9th International Conference on Solid-State and Integrated-Circuit Technology, Beijing,China:IEEE,2008:982-984.[23] Wang Y, Liu SW, Sun XW, et al. Highly transparent solution processed In-Ga-Zn oxide thin films and thin film transistors [J].J. Sol-Gel Sci. Technol., 2010, 55:322-327.[24] Yang Y H,Yang S S,Chou K S.Characteristic enhancement of solution-processed In-Ga-Zn oxide thin-film transistors by laser annealing [J].IEEE Electron Device Lett., 2010, 31(9):969-971.[25] Lee J S, Chang S, Koo S M, et al. High-performance a-IGZO TFT with ZrO2 gate dielectric fabricated at room temperature [J].IEEE Electron Device Letters, 2010, 31(3):225-227.[26] Lee H N, Kyung J W, Kang S K, et al. Current status of, challenges to, and perspective view of AM-OLED //IDW06: Proceedings of The 13th International Display Workshops, Shiga, Japan:IDW, 2006, 1-3:663-666.[27] Martins R, Barquinha P, Pimentel A, et al. Transport in high mobility amorphous wide band gap indium zinc oxide films [J].Physica Status Solidi (A) - Applications and Materials Science, 2005, 202(9):R95-R97.[28] Wu W J, Yao R H, Li S H, et al. A Compact model for polysilicon TFTs leakage current including the poole-Frenkel effect [J].IEEE Transactions on Electron Devices, 2007, 54(11):2975-2983.[29] 程松华. ZnO薄膜晶体管有源层的磁控溅射制备研究 . 武汉:华中科技大学,2006.[30] Chang S J, Su Y K, Shei Y P. High quality ZnO thin films on InP substrates prepared by radio frequency magnetron sputtering. I. Material study [J].J. Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 1995, 13(2):385-388.[31] Pimentel A, Fortunato E, Goncalves A, et al. Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices [J].Thin Solid Films, 2005, 487(1-2):212-215.[32] Yabuta H, Sano M, Abe K, et al. High-mobility thin-film transistor with amorphous InGaZnO4 channel fabricated by room temperature rf-magnetron sputtering [J].Appl. Phys. Lett.,2006, 89(11):112123(1-3).[33] Aoi T, Oka N, Sato Y, et al. DC sputter deposition of amorphous indium-gallium-zinc-oxide (a-IGZO) films with H2O introduction [J].Thin Solid Films, 2010, 518:3004-3007.[34] Cross R B M, De Souza M M. Investigating the stability of zinc oxide thin film transistors [J].Appl. Phys. Lett.,2006, 89(26):263513(1-3).[35] Lee J M, Cho I T, Lee J H, et al. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors [J].Appl. Phys. Lett.,2008, 93(9):093504(1-3).[36] Powell M J, Vanberkel C, Franklin A R, et al.Defect pool in amorphous-silicon thin-film transisters [J].Phys, Rev. B, 1992, 45(8):4160-4170.[37] 张新安,张景文,张伟风,等. 退火温度对ZnO薄膜晶体管电学性能的影响 [J]. 液晶与显示, 2009, 24(4):557-561.[38] Suresh A, Muth J F. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors [J].Appl. Phys. Lett., 2008, 92(3):033502(1-3).

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

氧分压对铟镓锌氧薄膜晶体管性能影响