刘汉法,袁玉珍, 张化福, 等.溅射压强对低阻高透过率掺钛氧化锌透明导电薄膜的影响 [J]. 人工晶体学报, 21,39(1):185-189.[2] Zhang H F, Lei C X, Liu H F, et al. Low-temperature deposition of transparent conducting ZnO:Zr films on PET substrates by DC magnetron sputtering [J]. Applied Surface Science, 29, 255(11):654-356.[3] 刘汉法,张化福,类成新,等. 薄膜厚度对ZnO∶Zr透明导电薄膜光电性能的影响 [J]. 液晶与显示, 28, 23(6):77-71.[4] 田苗苗,范翊,刘星元. 透明导电铟铋氧化物薄膜的制备及其性能 [J]. 发光学报, 21,31(4):65-69.[5] 邓雪然,邓宏,韦敏,等. 额定压强下O2／Aｒ比对ZｎO ∶ Aｌ薄膜导电性能的影响 [J]. 发光学报 , 21,31(2):227-229.[6] 马晓翠,叶家聪,曹培江,等.射频溅射功率对AZO薄膜结构及光电特性和热稳定性的影响 [J]. 发光学报, 21,31(4):65-69.[7] Cao H T, Pei Z L, Gong J, et al. Transparent conductive Al and Mn doped ZnO thin films prepared by DC reactive magnetron sputtering [J]. Surface and Coatings Technology, 24, 184(1):84-92.[8] Lin W, Ma R X, Shao W, et al. Structural, electrical and optical properties of Gd doped and undoped ZnO:Al (ZAO) thin films prepared by RF magnetron sputtering [J]. Applied Surface Science, 27, 253(11):5179-5183.[9] Abduev A K, Akhmedov A K, Asvarov A S. The structural and electrical properties of Ga-doped ZnO and Ga,B codoped ZnO thin films: The effects of additional boron impurity [J].Solar Energy Materials and Solar Cells, 27,91(4):258-26.[1] Jiang M H, Liu X Y. Structural, electrical and optical properties of Al-Ti codoped ZnO (ZATO) thin films prepared by RF magnetron sputtering [J]. Appl. Surface Science, 28, 255 (5):3175-3178[11] Yang-Ming Lu, Chen-Min Chang, Shu-I Tsai, et al. Improving the conductance of ZnO thin films by doping with Ti [J]. Thin Solid Films,24,447-448:56-6.[12] 刘汉法,张化福,袁玉珍,等. 掺钛氧化锌透明导电薄膜的制备及特性研究 [J]. 半导体技术, 29,34(11):192-195.[13] 余旭浒, 马瑾, 计峰, 等. 薄膜厚度对ZnO ∶ Ga透明导电膜性能的影响 [J]. 功能材料, 25, 36(2):241-243.[14] 郝晓涛,马瑾,马洪磊,等. 薄膜厚度对ZnO ∶ Al透明导电膜性能的影响 [J]. 液晶与显示, 22,17(3):169-174.[15] Kim H, Horwitz J S, Kim W H, et al. Doped ZnO thin films as anode materials for organic light-emitting diodes [J]. Thin Solid Films, 22,42-421:539-543.