ICP设备光刻胶灰化工艺中膜层残留的改善

查甫德; 徐纯洁; 李根范; 张木; 崔立加; 冯耀耀; 朱梅花; 杨增乾; 刘增利; 陈正伟; 郑载润

doi:10.37188/YJYXS20203512.1264

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ICP设备光刻胶灰化工艺中膜层残留的改善

器件制备及检测 | 更新时间：2020-12-04

- ICP设备光刻胶灰化工艺中膜层残留的改善
- Preventing method of film residue in PR ashing process based on ICP etcher
- 液晶与显示 2020年35卷第12期页码：1264-1269
- 作者机构：
  
  合肥鑫晟光电科技有限公司, 安徽合肥 230011
- 作者简介：
  
  [ "查甫德(1986-), 男, 安徽铜陵人, 硕士, 工程师, 2012年于华东理工大学获得硕士学位, 主要从事TFT-LCD显示技术中的干法刻蚀技术研究。E-mail:zhafude@boe.com.cn" ]
- 基金信息：
- DOI：10.37188/YJYXS20203512.1264
  中图分类号： TN141.9
- 收稿日期：2020-03-19，
  
  修回日期：2020-08-09，
  
  录用日期：2020-8-9，
  
  纸质出版日期：2020-12
- 稿件说明：
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查甫德, 徐纯洁, 李根范, 等. ICP设备光刻胶灰化工艺中膜层残留的改善[J]. 液晶与显示, 2020,35(12):1264-1269.

Fu-de ZHA, Chun-jie XU, Gen-fan LI, et al. Preventing method of film residue in PR ashing process based on ICP etcher[J]. Chinese journal of liquid crystals and displays, 2020, 35(12): 1264-1269.
查甫德, 徐纯洁, 李根范, 等. ICP设备光刻胶灰化工艺中膜层残留的改善[J]. 液晶与显示, 2020,35(12):1264-1269. DOI： 10.37188/YJYXS20203512.1264.

Fu-de ZHA, Chun-jie XU, Gen-fan LI, et al. Preventing method of film residue in PR ashing process based on ICP etcher[J]. Chinese journal of liquid crystals and displays, 2020, 35(12): 1264-1269. DOI： 10.37188/YJYXS20203512.1264.

摘要

为改善TFT特性，采用感应耦合等离子体（ICP）设备进行4-Mask光刻胶（PR）灰化工艺，光刻胶剥离后源/漏数据线边缘、TFT沟道和其他像素区出现了线性的a-Si膜层残留。本文研究了光刻胶灰化工艺条件对a-Si膜层残留的影响，结果表明：压力、偏压射频功率是产生膜层残留的主要因素，O

用量为次要因素。通过光刻胶灰化工艺优化得出了改善膜层残留的条件：压力≥2.66 Pa，源极功率：偏压功率≥3：1，

（SF

）：

（O

）≥1：60，对感应耦合等离子体设备在光刻胶灰化工艺中的进一步应用具有非常重要的意义。

Abstract

In order to improve the characteristics of TFT

4-mask PR ashing process was carried out by indu cti vely coupled plasma etcher. After PR strip

linear a-Si film residue appeared on the edge of source/drain data line

TFT channel and other pixel area. The effect of PR ashing conditions on a-Si film residue was studied. The results show that the pressure and Bias RF power are the main factors to produce the film residue

and the amount of O

is the secondary factor. By adjusting the PR ashing recipe

the optimal condition for preventing film residue is obtained: Pressure ≥ 2.66 Pa

Source power:Bias power ≥ 3:1

(SF

) ≥ 1:60. The research of inductive coupling plasma etcher in PR ashing process has very important significance for the further application.

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感应耦合等离子体干法刻蚀中光刻胶异常变性的改善

各膜层对光刻胶灰化的影响