8光罩BCE结构IGZO-TFT的钝化层通孔柱状不良的改善

刘浩; 常维; 王志强; 刘勃

doi:10.37188/YJYXS20203512.1234

您当前的位置：

首页 >

文章列表页 >

8光罩BCE结构IGZO-TFT的钝化层通孔柱状不良的改善

器件制备及检测 | 更新时间：2020-12-04

- 8光罩BCE结构IGZO-TFT的钝化层通孔柱状不良的改善
- Columnar defect in the hole of BCE structured IGZO-TFT in 8-mask process
- 液晶与显示 2020年35卷第12期页码：1234-1239
- 作者机构：
  
  重庆京东方光电科技有限公司, 重庆 400700
- 作者简介：
  
  [ "刘浩(1988-), 男, 湖北黄冈人, 硕士, 高级工程师, 2014年于南京理工大学取得硕士学位, 主要从事干刻氧化物方面研究工作。E-mail:haol@boe.com.cn" ]
- 基金信息：
- DOI：10.37188/YJYXS20203512.1234
  中图分类号： TN321.5
- 收稿日期：2020-06-05，
  
  修回日期：2020-08-31，
  
  录用日期：2020-8-31，
  
  纸质出版日期：2020-12
- 稿件说明：
移动端阅览
刘浩, 常维, 王志强, 等. 8光罩BCE结构IGZO-TFT的钝化层通孔柱状不良的改善[J]. 液晶与显示, 2020,35(12):1234-1239.

Hao LIU, Wei CHANG, Zhi-qiang WANG, et al. Columnar defect in the hole of BCE structured IGZO-TFT in 8-mask process[J]. Chinese journal of liquid crystals and displays, 2020, 35(12): 1234-1239.
刘浩, 常维, 王志强, 等. 8光罩BCE结构IGZO-TFT的钝化层通孔柱状不良的改善[J]. 液晶与显示, 2020,35(12):1234-1239. DOI： 10.37188/YJYXS20203512.1234.

Hao LIU, Wei CHANG, Zhi-qiang WANG, et al. Columnar defect in the hole of BCE structured IGZO-TFT in 8-mask process[J]. Chinese journal of liquid crystals and displays, 2020, 35(12): 1234-1239. DOI： 10.37188/YJYXS20203512.1234.

摘要

针对氧化物工艺形成的钝化层通孔柱状不良进行系统研究，发现通孔柱状不良发生的根本原因，并找到了有效改善措施。通过对比两种不同设计的通孔出现的差异推测通孔柱状不良可能与膜层结构相关，对相应的膜层进行去除验证，确定了通孔柱状不良为1ITO膜层导致。通过扫描电镜发现1ITO刻蚀后仍然有小颗粒ITO残留，对通孔柱状不良提出合理解释。最后在通孔柱状不良形成机理上，提出了有效改善措施。ITO结晶物无法被刻蚀液刻蚀，残留的ITO结晶物阻挡SiO

刻蚀，从而形成通孔柱状不良。ITO一旦结晶，延长1ITO刻蚀时间也不能改善柱状不良，通过降低ITO厚度可有效减轻通孔柱状不良，但仍然无法消除，通过加大钝化层刻蚀反应气体，可以有效将ITO结晶物反应抽出，彻底消除通孔柱状不良。

Abstract

The columnar defect of hole etching in oxide process was investigated in this study. The reason or sources which is responsible for the columnar defect was revealed and corresponding measures for avoiding columnar defect were effectively established.The primary reason for producing columnar defect might be related to film structure

which can be deduced from the differences between two kinds of hole. After uncovering each layer of the film

columnar defect was detected in ITO layer. The result of scanning electron microscopy (SEM) showed that small particles appeared on the ITO layer after hole etching. Based on the above-mentioned mechanism of columnar defect formation

three solutions were attempted to solve the issue. ITO crystal cannot be etched by etching solution and residual ITO crystals will impede SiO

etching

which will produce columnar defect. Once ITO crystal was formed

extending the etching time will not remove the columnar defect. Decreasing the thickness of ITO can partially eliminate the columnar defect while completely erasing the columnar defect and etching the ITO crystal can be achieved by increasing the etching gases in passivation layer etching process

关键词

Keywords

references

王妹.非晶IGZO薄膜晶体管背沟道表面修饰及器件特性研究[D].宁波: 中国科学院宁波材料技术与工程研究所, 2016.

WANG M. Back-channel surface decoration in a-IGZO TFTs and the investigations on the device characteristics[D]. Ningbo: Ningbo Institute of Materials Technology & Engineering, Chinese Academy of Sciences, 2016. (in Chinese)

王韬 , 张希清 . 非晶镁铟锡氧薄膜晶体管的制备及退火对其性能的影响 . 发光学报 , 2017 . 38 ( 11 ): 1539 - 1544 . http://www.cnki.com.cn/Article/CJFDTotal-FGXB201711018.htm http://www.cnki.com.cn/Article/CJFDTotal-FGXB201711018.htm .

T WANG , X Q ZHANG . Fabrication and effect of annealing treatment on performance of amorphous Mg-In-Sn-O thin film transistor . Chinese Journal of Luminescence , 2017 . 38 ( 11 ): 1539 - 1544 . http://www.cnki.com.cn/Article/CJFDTotal-FGXB201711018.htm http://www.cnki.com.cn/Article/CJFDTotal-FGXB201711018.htm .

万云海 , 邹志翔 , 林亮 , 等 . 氧化物薄膜晶体管刻蚀阻挡层PECVD沉积条件研究 . 液晶与显示 , 2019 . 34 ( 1 ): 7 - 13 . http://cjlcd.lightpublishing.cn/thesisDetails?columnId=1456051&Fpath=&index=-1&l=zh http://cjlcd.lightpublishing.cn/thesisDetails?columnId=1456051&Fpath=&index=-1&l=zh .

Y H WAN , Z X ZOU , L LIN , 等 . Etch-stop layer plasma chemical enhanced vapor deposition for oxide thin-film-transistor . Chinese Journal of Liquid Crystals and Displays , 2019 . 34 ( 1 ): 7 - 13 . http://cjlcd.lightpublishing.cn/thesisDetails?columnId=1456051&Fpath=&index=-1&l=zh http://cjlcd.lightpublishing.cn/thesisDetails?columnId=1456051&Fpath=&index=-1&l=zh .

田茂坤 , 董晓楠 , 黄中浩 , 等 . IGZO-TFT钝化层三元复合结构过孔刻蚀 . 液晶与显示 , 2019 . 34 ( 6 ): 564 - 569 . n/Article/CJFDTotal-YJYS201906005.htm 田茂坤, 董晓楠, 黄中浩, 等. IGZO-TFT钝化层三元复合结构过孔刻蚀[J].液晶与显示, 2019, 34( n/Article/CJFDTotal-YJYS201906005.htm 田茂坤, 董晓楠, 黄中浩, 等. IGZO-TFT钝化层三元复合结构过孔刻蚀[J].液晶与显示, 2019, 34( .

M K TIAN , X N DONG , Z H HUANG , 等 . Ternary composites of passivation layer for hole plasma etching of IGZO-TFT . Chinese Journal of Liquid Crystals and Displays , 2019 . 34 ( 6 ): 564 - 569 . n/Article/CJFDTotal-YJYS201906005.htm 田茂坤, 董晓楠, 黄中浩, 等. IGZO-TFT钝化层三元复合结构过孔刻蚀[J].液晶与显示, 2019, 34( n/Article/CJFDTotal-YJYS201906005.htm 田茂坤, 董晓楠, 黄中浩, 等. IGZO-TFT钝化层三元复合结构过孔刻蚀[J].液晶与显示, 2019, 34( .

白金超 , 王静 , 赵磊 , 等 . 氮化硅的ECCP刻蚀特性研究 . 液晶与显示 , 2017 . 32 ( 7 ): 533 - 537 . http://cjlcd.lightpublishing.cn/thesisDetails?columnId=1357220&Fpath=&index=-1&l=zh http://cjlcd.lightpublishing.cn/thesisDetails?columnId=1357220&Fpath=&index=-1&l=zh .

J C BAI , J WANG , L ZHAO , 等 . Etching characteristics of silicon nitride by ECCP . Chinese Journal of Liquid Crystals and Displays , 2017 . 32 ( 7 ): 533 - 537 . http://cjlcd.lightpublishing.cn/thesisDetails?columnId=1357220&Fpath=&index=-1&l=zh http://cjlcd.lightpublishing.cn/thesisDetails?columnId=1357220&Fpath=&index=-1&l=zh .

谢晓强 , 戴旭涵 , 赵小林 , 等 . 反应离子刻蚀中的边缘效应及其补偿办法 . 真空电子技术 , 2005 . ( 2 ): 41 - 44 . http://d.wanfangdata.com.cn/Periodical/zkdzjs200502013 http://d.wanfangdata.com.cn/Periodical/zkdzjs200502013 .

X Q XIE , X H DAI , X L ZHAO , 等 . The edge effect in high power RIE and compensatory approach . Vacuum Electronics , 2005 . ( 2 ): 41 - 44 . http://d.wanfangdata.com.cn/Periodical/zkdzjs200502013 http://d.wanfangdata.com.cn/Periodical/zkdzjs200502013 .

杨光 , 苟君 , 李伟 , 等 . 二氧化硅的反应离子刻蚀工艺研究 . 微处理机 , 2012 . 33 ( 3 ): 1 - 3, 6 . http://www.cnki.com.cn/Article/CJFDTotal-WCLJ201203000.htm http://www.cnki.com.cn/Article/CJFDTotal-WCLJ201203000.htm .

G YANG , J GOU , W LI , 等 . Optimization study on the reactive ion etching for SiO 2 . Microprocessors , 2012 . 33 ( 3 ): 1 - 3, 6 . http://www.cnki.com.cn/Article/CJFDTotal-WCLJ201203000.htm http://www.cnki.com.cn/Article/CJFDTotal-WCLJ201203000.htm .

苏兴华 , 孟雷超 , 王本盼 , 等 . 煅烧铟锡氢氧化物和氯化钠混合粉末制备铟锡氧化物纳米粉体 . 中国科技论文 , 2013 . 8 ( 12 ): 1317 - 1320 . http://d.wanfangdata.com.cn/Periodical/zgkjlwzx201312024 http://d.wanfangdata.com.cn/Periodical/zgkjlwzx201312024 .

X H SU , L C MENG , B P WANG , 等 . Preparation of nanocrystalline indium tin oxide powder by calcining the mixture of indium tin hydroxide and sodium chloride . China Science Paper , 2013 . 8 ( 12 ): 1317 - 1320 . http://d.wanfangdata.com.cn/Periodical/zgkjlwzx201312024 http://d.wanfangdata.com.cn/Periodical/zgkjlwzx201312024 .

罗远晟 , 陈松林 , 马平 , 等 . 膜厚对ITO薄膜的电学与光学性质的影响 . 压电与声光 , 2010 . 32 ( 6 ): 1024 - 1026 . http://www.cqvip.com/qk/92382x/201006/36118363.html http://www.cqvip.com/qk/92382x/201006/36118363.html .

Y S LUO , S L CHEN , P MA , 等 . Influence of thickness on electrical and optical property of ITO thin films . Piezoelectrics & Acoustooptics , 2010 . 32 ( 6 ): 1024 - 1026 . http://www.cqvip.com/qk/92382x/201006/36118363.html http://www.cqvip.com/qk/92382x/201006/36118363.html .

郑志霞 , 冯勇建 , 张春权 . ICP刻蚀技术研究 . 厦门大学学报(自然科学版) , 2004 . 43 ( S1 ): 365 - 368 . http://d.wanfangdata.com.cn/Periodical/xmdxxb2004z1079 http://d.wanfangdata.com.cn/Periodical/xmdxxb2004z1079 .

Z X ZHENG , Y J FENG , C Q ZHANG . Etching technique of inductive couple plasmas . Journal of Xiamen University (Natural Science) , 2004 . 43 ( S1 ): 365 - 368 . http://d.wanfangdata.com.cn/Periodical/xmdxxb2004z1079 http://d.wanfangdata.com.cn/Periodical/xmdxxb2004z1079 .

浏览量

141

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

摩擦Mura机理和设计改善方法

单层ITO多点电容触摸屏的设计