金属氧化物薄膜晶体管的激光退火

宁洪龙; 邓宇熹; 黄健朗; 罗子龙; 胡润东; 刘贤哲; 王一平; 邱天; 姚日晖; 彭俊彪

doi:10.37188/YJYXS20203512.1211

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金属氧化物薄膜晶体管的激光退火

材料物理 | 更新时间：2020-12-04

- 金属氧化物薄膜晶体管的激光退火
- Laser annealing of metal oxide thin film transistor
- 液晶与显示 2020年35卷第12期页码：1211-1221
- 作者机构：
  
  1.华南理工大学发光材料与器件国家重点实验室, 高分子光电材料与器件研究所, 广东广州 510641
  2.南京航空航天大学机械结构力学及控制国家重点实验室, 江苏南京 210016
  3.五邑大学智能制造学部, 广东江门 529000
- 作者简介：
  
  [ "宁洪龙(1971-), 男, 湖南株洲人, 博士, 教授, 2004年于清华大学获博士学位, 主要从事新型信息显示材料与器件系统集成研究。E-mail:ninghl@scut.edu.cn" ]
  [ "姚日晖(1981-), 男, 湖南涟源人, 博士, 副教授, 2008年于中山大学获得博士学位, 主要从事光电材料与器件领域的教学、科研工作。E-mail:yaorihui@scut.edu.cn" ]
- 基金信息：
  
  国家重点研发计划专项项目(2016YFB0401504);国家自然科学基金(51771074);国家自然科学基金(61574061);国家自然科学基金重大集成项目(U1601651);广东省基础与应用基础研究重大项目(2019B030302007);广州市科技计划项目(201904010344);中央高校基本科研业务费专项资金(2019MS012);季华实验室自主立项项目(X190221TF191);2019年广东大学生科技创新培育专项资金(“攀登计划”专项资金：No.pdjh2019a0028);2019年广东大学生科技创新培育专项资金(pdjh2019b0041);国家级大学生创新创业训练计划(201910561005);国家级大学生创新创业训练计划(201910561007);华南理工大学百步梯攀登计划研究项目(j2tw201902475);华南理工大学百步梯攀登计划研究项目(j2tw201902203)
- DOI：10.37188/YJYXS20203512.1211
  中图分类号： TN249
- 收稿日期：2020-06-17，
  
  修回日期：2020-08-18，
  
  录用日期：2020-8-18，
  
  纸质出版日期：2020-12
- 稿件说明：
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宁洪龙, 邓宇熹, 黄健朗, 等. 金属氧化物薄膜晶体管的激光退火[J]. 液晶与显示, 2020,35(12):1211-1221.

Hong-long NING, Yu-xi DENG, Jian-lang HUANG, et al. Laser annealing of metal oxide thin film transistor[J]. Chinese journal of liquid crystals and displays, 2020, 35(12): 1211-1221.
宁洪龙, 邓宇熹, 黄健朗, 等. 金属氧化物薄膜晶体管的激光退火[J]. 液晶与显示, 2020,35(12):1211-1221. DOI： 10.37188/YJYXS20203512.1211.

Hong-long NING, Yu-xi DENG, Jian-lang HUANG, et al. Laser annealing of metal oxide thin film transistor[J]. Chinese journal of liquid crystals and displays, 2020, 35(12): 1211-1221. DOI： 10.37188/YJYXS20203512.1211.

摘要

金属氧化物薄膜晶体管（MOTFT）具有较高的载流子迁移率（10~100 cm

/V·s），且薄膜均匀性好、制备温度低和可见光透明的优点，被认为是最有前途的新一代TFT。激光退火因具有能量高、速度快、对衬底损伤小和退火范围可控的特点，相比传统热退火，更适用于柔性和大尺寸背板的制备。本文综述了有关金属氧化物薄膜及MOTFT激光退火的研究进展；详细讨论了激光退火中的关键参数；系统阐述了激光对金属氧化物薄膜的作用以及激光对MOTFT性能的影响。最后，总结了现在激光退火技术存在的问题以及发展方向。

Abstract

The metal oxide thin film transistor (MOTFT) has the advantages of high carrier mobility (10~100 cm

/V·s)

good thin film uniformity

low preparation temperature and transparent visible light. It is the most promising new generation TFT. Laser annealing has the characteristics of high energy

short time

low damage to the substrate and controllable processing range. According to the traditional thermal continuous

it is more suitable to produce flexible and large-size panels. The research progress of laser annealing discusses in detail the key parameters that affect the inversion effect in laser annealing; the effect of laser on metal oxide thin film and the effect of laser on the performance of MOTFT are systematically decomposed. Finally

the problems and development directions of current laser annealing technology are summarized.

关键词

Keywords

references

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