激光对固态电解质金属氧化物薄膜晶体管性能的影响

杨倩; 杜世远; 边锐

doi:10.37188/YJYXS20203511.1103

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激光对固态电解质金属氧化物薄膜晶体管性能的影响

器件物理及器件制备技术 | 更新时间：2020-10-30

- 激光对固态电解质金属氧化物薄膜晶体管性能的影响
- Influence of laser irradiation on solid-electrolyte based metal-oxide thin film transistors performance
- 液晶与显示 2020年35卷第11期页码：1103-1109
- 作者机构：
  
  1.福州大学至诚学院, 福建福州 350002
  2.福建卫生职业技术学院, 福建福州 350101
- 作者简介：
  
  [ "杨倩(1988-), 女, 山西太原人, 博士研究生, 讲师, 2013年于福州大学获得硕士学位, 主要从事薄膜晶体管的研究。E-mail:yqian_0116@163.com" ]
  [ "杜世远(1988-), 男, 福建泉州人, 硕士, 讲师, 2013年于福州大学获得硕士学位, 主要从事半导体器件及医疗设备的研究。E-mail:282323559@qq.com" ]
- 基金信息：
  
  福建省教育厅中青年教师教育科研项目(JT180812);海峡两岸职业教育专项研究课题(FJJKHX17-072)
- DOI：10.37188/YJYXS20203511.1103
  中图分类号： TN321.5
- 收稿日期：2020-04-25，
  
  修回日期：2020-06-01，
  
  录用日期：2020-6-1，
  
  纸质出版日期：2020-11-05
- 稿件说明：
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杨倩, 杜世远, 边锐. 激光对固态电解质金属氧化物薄膜晶体管性能的影响[J]. 液晶与显示, 2020,35(11):1103-1109.

Qian YANG, Shi-yuan DU, Rui BIAN. Influence of laser irradiation on solid-electrolyte based metal-oxide thin film transistors performance[J]. Chinese journal of liquid crystals and displays, 2020, 35(11): 1103-1109.
杨倩, 杜世远, 边锐. 激光对固态电解质金属氧化物薄膜晶体管性能的影响[J]. 液晶与显示, 2020,35(11):1103-1109. DOI： 10.37188/YJYXS20203511.1103.

Qian YANG, Shi-yuan DU, Rui BIAN. Influence of laser irradiation on solid-electrolyte based metal-oxide thin film transistors performance[J]. Chinese journal of liquid crystals and displays, 2020, 35(11): 1103-1109. DOI： 10.37188/YJYXS20203511.1103.

摘要

基于固态电解质的金属氧化物薄膜晶体管具有良好的环境稳定性和优异的电学性能，因而具有巨大的应用潜力。针对传统基于固态电解质金属氧化物薄膜晶体管调控方式工艺复杂、制备时间长的问题，本文采用高

固态电解质Ta

作为栅绝缘层，透明氧化铟锡（ITO）作为有源层以及源漏电极，在沉积半导体层和电极之前，利用飞秒激光对Ta

绝缘层薄膜进行照射处理。探究了不同激光强度对固态电解质金属氧化物晶体管电学性能的影响。随着激光强度的提高，晶体管的开态电流提高，阈值电压负向漂移。同时，本文进一步探索了激光对固态电解质晶体管突触性能的影响，兴奋性后突触电流（EPSC）随着激光强度的增强而增加。XPS测试表明，Ta

薄膜中氧空位含量增多，从而导致器件电导的变化。本文利用激光优异的加工处理速度和对材料性能的精确控制，提出了一种简单、快速（

1 s）、低温（

45℃）地调控晶体管性能的方式。

Abstract

The solid-electrolyte based metal-oxide thin film transistors has huge potential due to its good environment stability and excellent electrical performance. However

the sophisticated fabrication process and time consuming are the main drawbacks involved in the traditional method to modulate the electrical performance of solid-electrolyte based metal-oxide thin film transistors. Laser processing on the materials provides excellent processing speed and precise control. The metal-oxide thin film transistor was realized utilizing high

solid electrolyte as dielectric layer and transparent indium tin oxide (ITO) as semiconductor layer. Prior to the deposition of active layer and electrodes

fs-laser was induced to irradiate on the surface of Ta

dielectric layer. As the intensity of laser irradiation increased

the

of the transistor was enhanced and the threshold voltage was negatively drifted. In addition

the Excitatory Post Synaptic Current(EPSC) of the solid-electrolyte based metal-oxide thin film transistors was studied under different laser intensities. The EPSC was significantly increased as the laser intensity enhanced. Meanwhile

XPS results showed that the amount of oxygen vacancies could be controlled via laser irradiation. A simple

fast(

1 s) and low-temperature(

45 ℃) method was proposed to modulate the performance of thin film transistors.

关键词

Keywords

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