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1.桂林电子科技大学 信息与通信学院, 广西 桂林 541004
2.桂林电子科技大学 广西无线宽带通信与信号处理重点实验室, 广西 桂林 541004
3.上海科润光电材料有限公司, 上海 200233
[ "卯龙(1996—),男,贵州毕节人,硕士研究生,2019年于重庆理工大学获得学士学位,主要从事光源及其驱动开关电源技术的研究。E-mail: 1226525741@qq.com" ]
[ "何志毅(1965—),男,湖南永州人,博士,教授,2001年于北京交通大学获得博士学位,主要从事发光器件、显示技术与光学成像的研究。E-mail: hezhiyi@guet.edu.cn" ]
收稿日期:2021-12-21,
修回日期:2022-02-22,
纸质出版日期:2022-04-05
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卯龙, 何志毅, 郑岩, 等. 电致发光器件的复合开关电路驱动技术[J]. 液晶与显示, 2022,37(4):444-450.
Long MAO, Zhi-yi HE, Yan ZHENG, et al. Driving technique of electroluminescent devices by complex switching circuits[J]. Chinese journal of liquid crystals and displays, 2022, 37(4): 444-450.
卯龙, 何志毅, 郑岩, 等. 电致发光器件的复合开关电路驱动技术[J]. 液晶与显示, 2022,37(4):444-450. DOI: 10.37188/CJLCD.2021-0334.
Long MAO, Zhi-yi HE, Yan ZHENG, et al. Driving technique of electroluminescent devices by complex switching circuits[J]. Chinese journal of liquid crystals and displays, 2022, 37(4): 444-450. DOI: 10.37188/CJLCD.2021-0334.
设计了一种柔性电致发光(EL)器件驱动电源的复合开关电路。EL器件表现为容性负载,造成其交流驱动电源开关电路中晶体管开通瞬间很大的尖峰电流而易烧毁,降低了驱动电源可靠性。因此使用瞬时电流容量大的可控硅(SCR)充当驱动电源电路的主开关管,在其阳极-阴极两端并联MOS管延迟导通/关断,起到分流和短接可控硅的作用,从而使可控硅在开通之后能够关断。适当调节MOS管延迟开关时间错开尖峰电流且使两种开关管的温升相等或相近,进一步提高这种可控硅-MOS管复合开关电路的可靠性。
A composite switching circuit for flexible electroluminescent (EL) device driver was designed. The EL devices behave as capacitive loads, resulting in the transistors’ breaking down by the high peak current of the transistors at the instant as they are turned on and thus low reliability of the drivers. The thyristors (SCRs) with higher transient current capacity were employed as the main switching devices for the driver, in parallel connection to the MOSFETs. The MOSFETs play the roles of current shunt and short-circuiting, thereby turn off the thyristors after being turned on. The MOSFETs can stay off the peak current and the two kinds of transistor, both the thyristors and MOSFETs, could have the same or nearly the same temperature rise by properly adjusting the delay time of the MOSFETs, further improve the reliability of this composite thyristor-MOSFET switching circuit.
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周琪钧 , 田冕 , 刘超 , 等 . 亚阈电流对MOS栅控晶闸管d V /d t 抗性的影响 [J]. 电子与封装 , 2020 , 20 ( 8 ): 080402 . doi: 10.16257/j.cnki.1681-1070.2020.0808 http://dx.doi.org/10.16257/j.cnki.1681-1070.2020.0808
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