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氧氩比对Ta2O5栅介质薄膜晶体管电学性能的影响
Effect of oxygen to argon ratio on the electrical performance of Ta2O5 gate dielectric thin film transistor
- 液晶与显示 2021年36卷第12期 页码：1623-1629
- 作者机构：
1.吉林建筑大学 电气与计算机学院, 吉林省建筑电气综合节能重点实验室, 吉林 长春 130118
2.吉林建筑大学 寒地建筑综合节能教育部重点实验室, 吉林 长春 130118
3.吉林师范大学, 吉林 四平 136099
- 作者简介：
[ "王超(1981-), 女, 吉林长春人, 博士, 副教授, 2019年于吉林大学获得博士学位, 主要从事半导体材料与器件方面的研究。E-mail: girl.alice@foxmail.com" ]
[ "杨小天(1969-), 男, 吉林长春人, 博士, 教授, 2004年于吉林大学获得博士学位, 主要从事半导体材料与器件方面的研究。E-mail: hanyxt@163.com" ]
- 基金信息：中央引导地方科技发展资金吉林省基础研究专项(202002012JC);吉林省科技发展计划(20200201177JC);吉林省教育厅科学技术研究项目(JJKH20210256KJ);吉林省教育厅科学技术研究项目(JJKH20210277KJ);吉林省教育厅科学技术研究项目(JJKH20210276KJ)
DOI：10.37188/CJLCD.2021-0211
中图分类号： TN321.5;TH691.9收稿日期：2021-08-08，
修回日期：2021-09-13，
纸质出版日期：2021-12
- 稿件说明：
移动端阅览
王超, 刘芙男, 杨帆, 等. 氧氩比对Ta2O5栅介质薄膜晶体管电学性能的影响[J]. 液晶与显示, 2021,36(12):1623-1629.
Chao WANG, Fu-nan LIU, Fan YANG, et al. Effect of oxygen to argon ratio on the electrical performance of Ta2O5 gate dielectric thin film transistor[J]. Chinese journal of liquid crystals and displays, 2021, 36(12): 1623-1629.
王超, 刘芙男, 杨帆, 等. 氧氩比对Ta2O5栅介质薄膜晶体管电学性能的影响[J]. 液晶与显示, 2021,36(12):1623-1629. DOI： 10.37188/CJLCD.2021-0211.
Chao WANG, Fu-nan LIU, Fan YANG, et al. Effect of oxygen to argon ratio on the electrical performance of Ta2O5 gate dielectric thin film transistor[J]. Chinese journal of liquid crystals and displays, 2021, 36(12): 1623-1629. DOI： 10.37188/CJLCD.2021-0211.
摘要
为了有效提高薄膜晶体管的电学性能，采用了高介电常数的材料代替传统的SiO
2
作为栅介质。相比传统的SiO
2
薄膜，Ta
2
O
5
薄膜具有较大的介电常数，又能够与传统的半导体制备工艺很好地兼容，有很大潜力成为新一代的栅介质材料，更适用于新一代薄膜晶体管的发展。采用磁控溅射方法制备了Ta
2
O
5
薄膜，并以Ta
2
O
5
作为栅介质制备了AZO-TFT。研究了氧氩比条件对Ta
2
O
5
薄膜性质的影响，以及对AZO-TFT电学性能的影响；分析了Ta
2
O
5
薄膜的表面形貌及粗糙度对薄膜晶体管性能的影响；最后，对比了SiO
2
栅介质与Ta
2
O
5
栅介质薄膜晶体管的电学性能。实验结果表明：氧氩比为10∶90时Ta
2
O
5
栅介质TFT器件电学性能最优，与传统SiO
2
栅介质TFT相比，电流开关比由1.02×10
3
提升到2×10
4
，亚阈值摆幅从5 V·dec
-1
降到1.5 V·dec
-1
，迁移率从1.6 cm
2
/（V·s）增加到12.2 cm
2
/（V·s），器件电学性能得到一定改善。
Abstract
In order to improve the electrical performance of the thin film transistors
a kind of high dielectric constant material is used instead of the conventional SiO
2
as the gate dielectric. Compared with the SiO
2
Ta
2
O
5
has a high-
k
value with semiconductor process compatibility
which exhibits the potential to overcome the problem of leakage current and thereby become a new generation of gate dielectric materials. Firstly
Ta
2
O
5
thin films were prepared by magnetron sputtering. AZO-TFTs were fabricated with Ta
2
O
5
as gate dielectric. Then
the effects of oxygen to argon ratio on the properties of Ta
2
O
5
thin films and the electrical properties of AZO-TFT were studied. The influence of surface morphology and roughness of Ta
2
O
5
thin films on the performance of thin film transistors was analyzed. Finally
the electrical properties of SiO
2
gate dielectric and Ta
2
O
5
gate dielectric thin film transistors were compared. Experimental results indicate that the performance of TFT is the best when the oxygen argon ratio of TFT is 10:90. Compared with the TFT using SiO
2
as the insulating layer
the on-off current radio of TFT with Ta
2
O
5
as the insulating layer increases from 1.02×10
3
to 2×10
4
. The subthreshold swing decreases from 5 V·dec
-1
to 1.5 V·dec
-1
. The field effect mobility increases from 1.6 cm
2
/(V·s) to 12.2 cm
2
/(V·s). The electrical performance of the TFT has been improved to some extent.
关键词
Keywords
references
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