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武汉京东方光电科技有限公司, 湖北 武汉 430000
[ "刘俊(1989-), 男, 湖北黄石人, 硕士, 高级工程师, 2016年于福州大学获得硕士学位, 主要从事TFT-LCD产品研发设计。E-mail:15859120642@163.com" ]
收稿日期:2021-03-09,
修回日期:2021-03-24,
纸质出版日期:2021-08
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刘俊, 赵达裕, 陈鹏, 等. 高温竖向串扰发生机理的定量研究[J]. 液晶与显示, 2021,36(8):1128-1135.
Jun LIU, Da-yu ZHAO, Peng CHEN, et al. Quantitative study on the mechanism of high temperature vertical crosstalks[J]. Chinese journal of liquid crystals and displays, 2021, 36(8): 1128-1135.
刘俊, 赵达裕, 陈鹏, 等. 高温竖向串扰发生机理的定量研究[J]. 液晶与显示, 2021,36(8):1128-1135. DOI: 10.37188/CJLCD.2021-0021.
Jun LIU, Da-yu ZHAO, Peng CHEN, et al. Quantitative study on the mechanism of high temperature vertical crosstalks[J]. Chinese journal of liquid crystals and displays, 2021, 36(8): 1128-1135. DOI: 10.37188/CJLCD.2021-0021.
为快速解决大尺寸薄膜晶体管液晶显示器(TFT-LCD)产品中的高温竖向串扰(V-CT)不良,本文研究了漏电流与V-CT现象间的定量关系,用以指导TFT特性相关工艺的调整。首先,基于V-CT电压梯度曲线及TFT开关实际工作状态下的漏电流,建立了一种定量表征漏电流的大小和V-CT严重程度间关系的测试方法。然后,应用此方法对客户端评测画面(CT-SEC)下发生的高温V-CT进行研究,实验结果表明:V-CT电压梯度曲线可以较好地匹配总体漏电流
I
off_total
渐变规律。高温初始及长期信赖性评价条件下,V-CT不良的发生同显示面板面内的光照漏电流
I
off
(
V
gl_GOUT
-
V
pixel_255-
)强相关。
In order to solve the problem of high temperature vertical crosstalk in large size thin film transistor liquid crystal display (TFT-LCD) quickly
the quantitative relationship between leakage current and V-CT phenomenon was studied to provide guidance of the process adjustment of TFT characteristics. Firstly
based on the contour map of
V
gl_TCON
characterized the occurrence of V-CT and the leakage current of TFT in actual working state
a method was developed to characterize the relationship between leakage current and severity of V-CT quantitatively. Secondly
according to the study of V-CT in CT-SEC image
the following conclusions are obtained: (1) the contour map and the trend of
I
off_total
match well in different
V
gl_TCON
value; (2) V-CT is strongly correlated with the leakage current under the photo
I
off
(
V
gl_GOUT
-
V
pixel_255-
) over any period in high temperature.
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