喷墨打印PVP绝缘层柔性薄膜晶体管研究

陶洪; 罗浩德; 宁洪龙; 姚日晖; 蔡炜; 郑喜凤; 汪洋; 王铂; 曹慧; 彭俊彪

doi:10.37188/CJLCD.2020-0317

您当前的位置：

首页 >

文章列表页 >

喷墨打印PVP绝缘层柔性薄膜晶体管研究

材料物理 | 更新时间：2021-04-28

- 喷墨打印PVP绝缘层柔性薄膜晶体管研究
- Inkjet printing PVP dielectric for flexible thin film transistor
- 液晶与显示 2021年36卷第5期页码：633-640
- 作者机构：
  
  1.广州新视界光电科技有限公司, 广东广州 510530
  2.华南理工大学高分子光电材料及器件研究所, 广东广州 510640
  3.季华实验室, 广东佛山 528000
  4.长春希达电子技术有限公司, 吉林长春 130103
- 作者简介：
  
  [ "陶洪(1983-)男, 广东梅县人, 博士, 高级工程师, 2010年于华南理工大学获得博士学位, 主要从事新型信息显示材料与器件方面的研究。E-mail: th@newvision-cn.com" ]
  [ "蔡炜(1994-), 男, 广东广州人, 博士, 2020年于华南理工大学获得博士学位, 主要从事光电材料与器件领域的研究。E-mail: caiwei@jihualab.com" ]
- 基金信息：
  
  广东省重点领域研发计划(2020B010183002);国家自然科学基金(51771074);国家自然科学基金(62074059);广东省基础与应用基础研究重大项目(2019B030302007);中央高校基本科研业务费专项资金(2020ZYGXZR060);中央高校基本科研业务费专项资金(2019MS012);季华实验室自主立项项目(X190221TF191)
- DOI：10.37188/CJLCD.2020-0317
  中图分类号： TN27
- 收稿日期：2020-12-01，
  
  修回日期：2021-01-05，
  
  纸质出版日期：2021-05
- 稿件说明：
移动端阅览
陶洪, 罗浩德, 宁洪龙, 等. 喷墨打印PVP绝缘层柔性薄膜晶体管研究[J]. 液晶与显示, 2021,36(5):633-640.

Hong TAO, Hao-de LUO, Hong-long NING, et al. Inkjet printing PVP dielectric for flexible thin film transistor[J]. Chinese journal of liquid crystals and displays, 2021, 36(5): 633-640.
陶洪, 罗浩德, 宁洪龙, 等. 喷墨打印PVP绝缘层柔性薄膜晶体管研究[J]. 液晶与显示, 2021,36(5):633-640. DOI： 10.37188/CJLCD.2020-0317.

Hong TAO, Hao-de LUO, Hong-long NING, et al. Inkjet printing PVP dielectric for flexible thin film transistor[J]. Chinese journal of liquid crystals and displays, 2021, 36(5): 633-640. DOI： 10.37188/CJLCD.2020-0317.

摘要

柔性电子设备的快速发展对薄膜晶体管（TFT）提出了低功耗、耐弯折和可低温制备的要求。其中，栅极绝缘层是核心材料之一。溶液法制备有机栅极绝缘层具有低成本、柔韧性强的优点，适合大面积加工。本文采用喷墨打印法实现了聚乙烯吡咯烷酮（PVP）墨水的印刷成膜，采用XPS分析了不同退火温度处理的印刷PVP薄膜成分差异，并测试了PVP器件的漏电流、电容和转移特性参数。200 ℃退火的PVP薄膜漏电流密度≤10

-4

A/cm

（5 V），相对介电常数约为3.8，玻璃衬底器件饱和迁移率达到4.6 cm

/（V·s），开关比≥10

；PI柔性衬底器件在20 mm弯折半径下迁移率2.8 cm

/（V·s），开关比约6×10

，在柔性电子领域有一定的应用前景。

Abstract

Rapid development of flexible electronics requires thin film transistor (TFT) to have features of low power consumption

good bending resistance and ability to be fabricated at low temperature. Gate insulator is one of the key materials in TFT device. Organic gate insulator prepared by solution method has the advantages of low cost

strong flexibility and is suitable for large area processing. In this paper

polyvinylpyrrolidone (PVP) dielectric film was achieved by inkjet printing process. The composition difference of printed PVP films with different annealing temperature was analyzed by XPS

and leakage current

capacitance and transfer characteristic of PVP devices were obtained by semiconductor analyzer. TFT device with PVP film annealed at 200 ℃ showed leakage current density ≤ 10

-4

A/cm

(5 V) and relative dielectric constant about 3.8. Saturation mobility of device based on glass substrate is 4.6 cm

/(V·s) and the

off

ratio is ≥ 10

while that for device based on PI substrate with bending radius of 20 mm is 2.8 cm

/(V·s) and 6×10

respectively. This result demonstrates that PVP dielectric is promising in flexible electronics.

关键词

Keywords

references

E FORTUNATO , P BARQUINHA , R MARTINS . Oxide semiconductor thin-film transistors: a review of recent advances . Advanced Materials , 2012 . 24 ( 22 ): 2945 - 2986 . DOI: 10.1002/adma.201103228 http://doi.org/10.1002/adma.201103228 .

J S PARK , W J MAENG , H S KIM , 等 . Review of recent developments in amorphous oxide semiconductor thin-film transistor devices . Thin Solid Films , 2012 . 520 ( 6 ): 1679 - 1693 . DOI: 10.1016/j.tsf.2011.07.018 http://doi.org/10.1016/j.tsf.2011.07.018 .

B K SHARMA , J H AHN . Flexible and stretchable oxide electronics . Advanced Electronic Materials , 2016 . 2 ( 8 ): 1600105 DOI: 10.1002/aelm.201600105 http://doi.org/10.1002/aelm.201600105 .

钟云肖 , 谢宇 , 周尚雄 , 等 . 溶液法氧化物薄膜晶体管的印刷制备 . 液晶与显示 , 2017 . 32 ( 6 ): 443 - 454 . http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20173206.0443 http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20173206.0443 .

Y X ZHONG , Y XIE , S X ZHOU , 等 . Oxide semiconductor thin film transistor device print fabrication based on solution method . Chinese Journal of Liquid Crystals and Displays , 2017 . 32 ( 6 ): 443 - 454 . http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20173206.0443 http://cjlcd.lightpublishing.cn/thesisDetails#10.3788/YJYXS20173206.0443 .

钟云肖 , 周尚雄 , 姚日晖 , 等 . 旋涂法制备氧化锆介质层及其在薄膜晶体管中的应用 . 发光学报 , 2018 . 39 ( 2 ): 214 - 219 . https://www.cnki.com.cn/Article/CJFDTOTAL-FGXB201802017.htm https://www.cnki.com.cn/Article/CJFDTOTAL-FGXB201802017.htm .

Y X ZHONG , S X ZHOU , R H YAO , 等 . Fabrication of zirconia dielectric layer by spin coating and its application in thin film transistor . Chinese Journal of Luminescence , 2018 . 39 ( 2 ): 214 - 219 . https://www.cnki.com.cn/Article/CJFDTOTAL-FGXB201802017.htm https://www.cnki.com.cn/Article/CJFDTOTAL-FGXB201802017.htm .

S CHUNG , J JANG , J CHO , 等 . All-inkjet-printed organic thin-film transistors with silver gate, source/drain electrodes . Japanese Journal of Applied Physics , 2011 . 50 ( 3S ): 03CB05 DOI: 10.7567/JJAP.50.03CB05 http://doi.org/10.7567/JJAP.50.03CB05 .

M D MORALES-ACOSTA , M A QUEVEDO-LÓPEZ , R RAMÍREZ-BON . PMMA-SiO 2 hybrid films as gate dielectric for ZnO based thin-film transistors . Materials Chemistry and Physics , 2014 . 146 ( 3 ): 380 - 388 . DOI: 10.1016/j.matchemphys.2014.03.042 http://doi.org/10.1016/j.matchemphys.2014.03.042 .

M S DE URQUIJO-VENTURA , M G S RAO , S MERAZ-DAVILA , 等 . PVP-SiO 2 and PVP-TiO 2 hybrid films for dielectric gate applications in CdS-based thin film transistors . Polymer , 2020 . 191 122261 DOI: 10.1016/j.polymer.2020.122261 http://doi.org/10.1016/j.polymer.2020.122261 .

D GUO , S ENTANI , S IKEDA , 等 . Effect of UV/ozone treatment of the dielectric layer on the device performance of pentacene thin film transistors . Chemical Physics Letters , 2006 . 429 ( 1/3 ): 124 - 128 . http://www.sciencedirect.com/science/article/pii/S000926140601147X http://www.sciencedirect.com/science/article/pii/S000926140601147X .

D GENG , H M KIM , M MATIVENGA , 等 . High resolution flexible AMOLED with integrated gate-driver using bulk-accumulation a-IGZO TFTs . SID Symposium Digest of Technical Papers , 2015 . 46 ( 1 ): 423 - 426 . DOI: 10.1002/sdtp.10393 http://doi.org/10.1002/sdtp.10393 .

C Y TSAY , T T HUANG . Characterization of low-temperature solution-processed indium-zinc oxide semiconductor thin films by KrF excimer laser annealing . Ceramics International , 2014 . 40 ( 6 ): 8287 - 8292 . DOI: 10.1016/j.ceramint.2014.01.030 http://doi.org/10.1016/j.ceramint.2014.01.030 .

W CAI , H L NING , S X ZHOU , 等 . Effective evaluation strategy toward low temperature solution-processed oxide dielectrics for TFT device . IEEE Journal of the Electron Devices Society , 2019 . 7 1140 - 1144 . DOI: 10.1109/JEDS.2019.2951203 http://doi.org/10.1109/JEDS.2019.2951203 .

何慧 , 王刚 , 赵谡玲 , 等 . 有机绝缘层材料聚(4-乙烯基苯酚)喷墨打印工艺研究 . 液晶与显示 , 2012 . 27 ( 5 ): 590 - 594 . http://cjlcd.lightpublishing.cn/thesisDetails?columnId=1695999&Fpath=&index=-1 http://cjlcd.lightpublishing.cn/thesisDetails?columnId=1695999&Fpath=&index=-1 .

H HE , G WANG , S L ZHAO , 等 . Inkjet printing organic dielectric material-poly (4-vinylphenol) . Chinese Journal of Liquid Crystals and Displays , 2012 . 27 ( 5 ): 590 - 594 . http://cjlcd.lightpublishing.cn/thesisDetails?columnId=1695999&Fpath=&index=-1 http://cjlcd.lightpublishing.cn/thesisDetails?columnId=1695999&Fpath=&index=-1 .

S HWANG , J H LEE , C H WOO , 等 . Effect of annealing temperature on the electrical performances of solution-processed InGaZnO thin film transistors . Thin Solid Films , 2011 . 519 ( 15 ): 5146 - 5149 . DOI: 10.1016/j.tsf.2011.01.074 http://doi.org/10.1016/j.tsf.2011.01.074 .

J SOCRATOUS , K K BANGER , Y VAYNZOF , 等 . Electronic structure of low-temperature solution-processed amorphous metal oxide semiconductors for thin-film transistor applications . Advanced Functional Materials , 2015 . 25 ( 12 ): 1873 - 1885 . DOI: 10.1002/adfm.201404375 http://doi.org/10.1002/adfm.201404375 .

X F LI , E L XIN , J H ZHANG . Low-temperature solution-processed zirconium oxide gate insulators for thin-film transistors . IEEE Transactions on Electron Devices , 2013 . 60 ( 10 ): 3413 - 3416 . DOI: 10.1109/TED.2013.2278206 http://doi.org/10.1109/TED.2013.2278206 .

S W LEE , J KIM , S CHEN , 等 . Carbon nanotube/manganese oxide ultrathin film electrodes for electrochemical capacitors . ACS Nano , 2010 . 4 ( 7 ): 3889 - 3896 . DOI: 10.1021/nn100681d http://doi.org/10.1021/nn100681d .

C H AHN , H K CHO , H KIM . Carrier confinement effect-driven channel design and achievement of robust electrical/photostability and high mobility in oxide thin-film transistors . Journal of Materials Chemistry C , 2016 . 4 ( 4 ): 727 - 735 . DOI: 10.1039/C5TC03766B http://doi.org/10.1039/C5TC03766B .

J H PARK , Y B YOO , K H LEE , 等 . Low-temperature, high-performance solution-processed thin-film transistors with peroxo-zirconium oxide dielectric . ACS Applied Materials & Interfaces , 2013 . 5 ( 2 ): 410 - 417 . http://pubs.acs.org/doi/10.1021/am3022625 http://pubs.acs.org/doi/10.1021/am3022625 .

宁洪龙 , 曾勇 , 姚日晖 , 等 . 室温生长AZO/Al 2 O 3 叠层薄膜晶体管性能研究 . 发光学报 , 2016 . 37 ( 11 ): 1372 - 1377 . https://www.cnki.com.cn/Article/CJFDTOTAL-FGXB201611012.htm https://www.cnki.com.cn/Article/CJFDTOTAL-FGXB201611012.htm .

H L NING , Y ZENG , R H YAO , 等 . Properties of AZO/Al 2 O 3 stacked thin film transistors prepared at room temperature . Chinese Journal of Luminescence , 2016 . 37 ( 11 ): 1372 - 1377 . https://www.cnki.com.cn/Article/CJFDTOTAL-FGXB201611012.htm https://www.cnki.com.cn/Article/CJFDTOTAL-FGXB201611012.htm .

M KALOUMENOS , K HOFMANN , D SPIEHL , 等 . Electrical properties of solution processed multilayer high-k ZrO 2 capacitors in inert atmosphere . Thin Solid Films , 2016 . 600 59 - 64 . DOI: 10.1016/j.tsf.2015.12.068 http://doi.org/10.1016/j.tsf.2015.12.068 .

浏览量

339

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

高迁移率金属氧化物半导体薄膜晶体管的研究进展

氧化锌锡薄膜晶体管的制备与性能研究

聚乙烯醇基底上氧化物薄膜晶体管的制备及其特性

喷墨打印OLED发光层像素坑内成膜控制方法