环境湿度对非晶铟镓锌氧薄膜晶体管负偏压光照稳定性的影响

冯国锋; 章雯; 董承远

doi:10.37188/CJLCD.2020-0305

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环境湿度对非晶铟镓锌氧薄膜晶体管负偏压光照稳定性的影响

器件物理及器件制备 | 更新时间：2021-04-28

- 环境湿度对非晶铟镓锌氧薄膜晶体管负偏压光照稳定性的影响
- Influence of ambient humidity on the stability of negative bias illumination for amorphous indium gallium zinc oxide thin film transistors
- 液晶与显示 2021年36卷第5期页码：649-655
- 作者机构：
  
  上海交通大学电子工程系, 上海 200240
- 作者简介：
  
  [ "冯国锋(1997-), 男, 江苏兴化人, 硕士研究生, 2018年于江苏大学获得学士学位, 主要从事a-IGZO TFT负偏压环境稳定性机理的研究。E-mail: fgf1997@sjtu.edu.cn" ]
  [ "董承远(1971-), 男, 辽宁沈阳人, 博士, 副教授, 2003年于上海交通大学获得博士学位, 主要从事薄膜电子器件与电路的研究。E-mail: cydong@sjtu.edu.cn" ]
- 基金信息：
  
  国家自然科学基金(61474075)
- DOI：10.37188/CJLCD.2020-0305
  中图分类号： TN321.5
- 收稿日期：2020-11-13，
  
  修回日期：2021-01-15，
  
  纸质出版日期：2021-05
- 稿件说明：
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冯国锋, 章雯, 董承远. 环境湿度对非晶铟镓锌氧薄膜晶体管负偏压光照稳定性的影响[J]. 液晶与显示, 2021,36(5):649-655.

Guo-feng FENG, Wen ZHANG, Cheng-yuan DONG. Influence of ambient humidity on the stability of negative bias illumination for amorphous indium gallium zinc oxide thin film transistors[J]. Chinese journal of liquid crystals and displays, 2021, 36(5): 649-655.
冯国锋, 章雯, 董承远. 环境湿度对非晶铟镓锌氧薄膜晶体管负偏压光照稳定性的影响[J]. 液晶与显示, 2021,36(5):649-655. DOI： 10.37188/CJLCD.2020-0305.

Guo-feng FENG, Wen ZHANG, Cheng-yuan DONG. Influence of ambient humidity on the stability of negative bias illumination for amorphous indium gallium zinc oxide thin film transistors[J]. Chinese journal of liquid crystals and displays, 2021, 36(5): 649-655. DOI： 10.37188/CJLCD.2020-0305.

摘要

为了探究环境湿度对非晶铟镓锌氧薄膜晶体管（a-IGZO TFT）的负偏压光照（NBIS）稳定性的影响，本文使用非密闭腔室进行不同波长光照射下以及不同相对湿度下的TFT负偏压测试。介绍了a-IGZO TFT的基本结构以及实验所用

I-V

测试系统。测试了不同波长光照条件下a-IGZO TFT的转移特性曲线以及相同波长光照射下不同相对湿度的转移特性曲线。实验结果表明：a-IGZO TFT的转移特性曲线随着电压偏置时间的增加而发生负偏；随着光照波长的减小，器件阈值电压负漂越明显。随着相对湿度增加，a-IGZO TFT的NBIS不稳定性逐渐降低，但其电学特性发生了严重的劣化。在相对湿度为50%，光照波长为400 nm时，a-IGZO TFT的NBIS电学特性最好，其在负偏压时间为1 500 s时的阈值电压偏移为15 V。

Abstract

In order to explore the influence of environmental humidity on the stability of the negative bias illumination (NBIS) of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFT)

the paper employed an unsealed chamber to carry on TFT's negative bias tress test under the illumination of lights of different wavelengths and different relative humidity. First

the basic structure of a-IGZO TFT and the

I-V

test system used in the experiment were introduced. Next

we tested the transfer characteristic curve of a-IGZO TFT under the illumination of light of different wavelengths and the transfer characteristic curve of different relative humidity under the illumination of the light of the same wavelength. The experimental results showed that the transfer characteristic curve of a-IGZO TFT shifted negatively as the voltage bias time increased. With the decrease of the wavelength of light

the device threshold voltage had a more significant negative drift. As the relative humidity increases

the NBIS instability of a-IGZO TFT gradually decreased but its electrical characteristics have seriously deteriorated. Environmental humidity has a significant impact on the stability of a-IGZO TFT's NBIS. When the relative humidity was 50% and the light wavelength was 400 nm

the threshold voltage shift of a-IGZO TFT reached 15 V while the negative voltage has stressed for 1 500 s

which showed the best performance under negative bias illumination stress.

关键词

Keywords

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