倒置有机发光二极管ITO阴极电子注入研究进展

田磊; 李志毅; 刘冠豪; 王鹰

doi:10.37188/CJLCD.2020-0264

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倒置有机发光二极管ITO阴极电子注入研究进展

有机发光显示材料与器件 | 更新时间：2021-02-01

- 倒置有机发光二极管ITO阴极电子注入研究进展
- Progress of electron injection of ITO cathode for inverted organic light-emitting diodes
- 液晶与显示 2021年36卷第1期页码：39-52
- 作者机构：
  
  1.中国科学院理化技术研究所, 北京 100190
  2.中国科学院大学, 北京 100049
- 作者简介：
  
  [ "田磊(1996-)，男，安徽亳州人，硕士研究生，2018年于东北林业大学获得学士学位，主要从事有机发光二极管电子注入及器件稳定性方面的研究。E-mail: tianlei18@mails.ucac.ac.cn" ]
  [ "王鹰 (1977-)，男，甘肃酒泉人，博士，研究员，2008年于中国科学院化学研究所获得博士学位，主要从事有机电致发光材料与器件的研究。E-mail: wangy@mail.ipc.ac.cn" ]
- 基金信息：
  
  国家自然科学基金(9183304);国家自然科学基金(61420106002);国家自然科学基金(21772209);科技部重大专项(2017YFA0204502);科技部重大专项(2016YFB0401004)
- DOI：10.37188/CJLCD.2020-0264
  中图分类号： TP394.1;TN383.1
- 收稿日期：2020-10-09，
  
  录用日期：2020-11-10，
  
  纸质出版日期：2021-01
- 稿件说明：
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田磊, 李志毅, 刘冠豪, 等. 倒置有机发光二极管ITO阴极电子注入研究进展[J]. 液晶与显示, 2021,36(1):39-52.

Lei TIAN, Zhi-yi LI, Guan-hao LIU, et al. Progress of electron injection of ITO cathode for inverted organic light-emitting diodes[J]. Chinese journal of liquid crystals and displays, 2021, 36(1): 39-52.
田磊, 李志毅, 刘冠豪, 等. 倒置有机发光二极管ITO阴极电子注入研究进展[J]. 液晶与显示, 2021,36(1):39-52. DOI： 10.37188/CJLCD.2020-0264.

Lei TIAN, Zhi-yi LI, Guan-hao LIU, et al. Progress of electron injection of ITO cathode for inverted organic light-emitting diodes[J]. Chinese journal of liquid crystals and displays, 2021, 36(1): 39-52. DOI： 10.37188/CJLCD.2020-0264.

摘要

在有机发光二极管(OLEDs)30多年的发展过程中，器件结构设计和功能材料开发是实现器件高效率发光的关键。倒置结构器件被认为是实现OLEDs器件高效率、长寿命的一种可行方案。但倒置器件以ITO为阴极造成了器件电子注入势垒过大，限制了倒置器件的进一步发展。本文以实现倒置器件电子注入原理的不同，分别介绍了n型掺杂、偶极层修饰和隧穿注入等方法在提高ITO阴极电子注入性能的相关研究工作。最后，对提高倒置器件电子注入性能的3种不同策略进行了总结和展望。

Abstract

The design of device structure and the development of functional materials are the keys to achieve high efficiency organic light emitting diodes (OLEDs) over the past 30 years. Inverted structure device is considered to be a feasible solution for OLEDs to realize high efficiency and long lifetime. However

the electron injection barrier from the ITO cathode to organic layer is large

which limits the further development of the inverted device. In this paper

we introduce the related research work of n-type doping

dipole layer modification and tunneling injection

which bases on the different mechanisms of electron injection for inverted devices. Finally

three different strategies to improve the electron injection performance of inverted devices are summarized and prospected.

关键词

Keywords

references

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