阵列基板铜工艺不良研究

吴祖谋; 白金超; 丁向前; 刘明悬; 李小龙; 王勋; 刘海鹏; 宋勇志; 陈维涛

doi:10.37188/CJLCD.2020-0253

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阵列基板铜工艺不良研究

显示技术与应用 | 更新时间：2021-04-02

- 阵列基板铜工艺不良研究
- Cu defects in array process
- 液晶与显示 2021年36卷第4期页码：560-565
- 作者机构：
  
  北京京东方显示技术有限公司, 北京 100176, China
- 作者简介：
  
  [ "吴祖谋(1991-), 男, 河南信阳人, 硕士, 2016年于北京航空航天大学获得硕士学位, 主要从事TFT-LCD工艺研究。E-mail:wuzumou@163.com" ]
- 基金信息：
- DOI：10.37188/CJLCD.2020-0253
  中图分类号： TN141.9
- 收稿日期：2020-09-23，
  
  修回日期：2020-12-18，
  
  纸质出版日期：2021-04
- 稿件说明：
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吴祖谋, 白金超, 丁向前, 等. 阵列基板铜工艺不良研究[J]. 液晶与显示, 2021,36(4):560-565.

Zu-mou WU, Jin-chao BAI, Xiang-qian DING, et al. Cu defects in array process[J]. Chinese journal of liquid crystals and displays, 2021, 36(4): 560-565.
吴祖谋, 白金超, 丁向前, 等. 阵列基板铜工艺不良研究[J]. 液晶与显示, 2021,36(4):560-565. DOI： 10.37188/CJLCD.2020-0253.

Zu-mou WU, Jin-chao BAI, Xiang-qian DING, et al. Cu defects in array process[J]. Chinese journal of liquid crystals and displays, 2021, 36(4): 560-565. DOI： 10.37188/CJLCD.2020-0253.

摘要

本文结合产品开发过程中遇到的铜相关不良现象进行研究，提出了有效的改善措施。结果表明，在第一次氮化硅刻蚀中的后灰化工序有高含量的氧气，会使过孔内部铜发生氧化而发黑。使用氢等离子体处理，可以将氧化铜还原成铜，在生产线光学设备测量时过孔反射出金属白色。在氧化铟锡刻蚀过程中，高温退火会造成裸露的铜发生严重氧化，需要去掉退火步骤或者更改设计来规避。在第二次氮化硅刻蚀步骤中，高含量的氧会氧化过孔处的铜，造成过孔连接异常，降低刻蚀步骤中氧气含量可以解决该不良。

Abstract

The mechanism of defects on Cu process along with the development of new product is studied in this paper

and improvement methods are proposed. The results show that the high flow of O

used in post ashing corrodes the Cu in PVX1 (The First passivation Layer) etch

and makes the Cu hole blackened. After adding the H

treatment step

CuO can be reduced to Cu

and the hole appears metallic white color during CD (Critical Dimension) measurement. During 1ITO (The First Indium Tin Oxides Layer) etch process

high temperature annealing results in the occurrence of serious oxidation of exposed SD Cu. Skipping anneal or changing mask design can avoid the defect. In the VIA etch step

high content of O

oxidizes the Cu

resulting in the break of conduction between gate and SD through the hole which leads to the occurrence of vertical line Mura. Reducing the content of O

of VIA etch can solve the problem.

关键词

Keywords

references

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