错位叠加曝光法制作楔形斜面微结构研究

董立文; 宋晓欣; 顾仁权; 张锋; 袁广才; 姚琪; 吕志军; 刘文渠; 崔钊

doi:10.37188/CJLCD.2020-0186

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错位叠加曝光法制作楔形斜面微结构研究

器件物理及器件制备技术 | 更新时间：2021-03-23

- 错位叠加曝光法制作楔形斜面微结构研究
- Wedge-shaped bevel microstructure prepared by dislocation and superposition exposure method
- 液晶与显示 2021年36卷第3期页码：398-404
- 作者机构：
  
  京东方科技集团股份有限公司, 北京 100176
- 作者简介：
  
  [ "董立文(1988-), 男, 河北唐山人, 硕士, 2014年于哈尔滨工业大学获得硕士学位, 主要从事半导体领域光刻工艺的相关研究以及新材料、新工艺的开发工作。E-mail: dongliwen@boe.com.cn" ]
- 基金信息：
- DOI：10.37188/CJLCD.2020-0186
  中图分类号： O647.2
- 收稿日期：2020-07-15，
  
  录用日期：2020-10-22，
  
  纸质出版日期：2021-03
- 稿件说明：
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董立文, 宋晓欣, 顾仁权, 等. 错位叠加曝光法制作楔形斜面微结构研究[J]. 液晶与显示, 2021,36(3):398-404.

Li-wen DONG, Xiao-xin SONG, Ren-quan GU, et al. Wedge-shaped bevel microstructure prepared by dislocation and superposition exposure method[J]. Chinese journal of liquid crystals and displays, 2021, 36(3): 398-404.
董立文, 宋晓欣, 顾仁权, 等. 错位叠加曝光法制作楔形斜面微结构研究[J]. 液晶与显示, 2021,36(3):398-404. DOI： 10.37188/CJLCD.2020-0186.

Li-wen DONG, Xiao-xin SONG, Ren-quan GU, et al. Wedge-shaped bevel microstructure prepared by dislocation and superposition exposure method[J]. Chinese journal of liquid crystals and displays, 2021, 36(3): 398-404. DOI： 10.37188/CJLCD.2020-0186.

摘要

本文研究了基于T公司生产的某型号正性光阻，采用错位叠加紫外曝光工艺，实现灰阶曝光效果的方法，最终得到具有特定角度的楔形斜面结构。光阻在进行紫外感光前后，对紫外光的吸收系数

会发生变化，根据朗伯比尔定律（Lambert-Beer law），将楔形斜面结构等效成台阶状结构，并通过实验计算出使该光阻发生光解反应的临界曝光能量

、光阻感光前后的吸收系数

和

'，并进一步根据等效模型结构得到错位叠加曝光过程中每步曝光所需能量大小。实验结果表明，使光阻进行分解反应的临界曝光能量

约为8 mJ，对紫外光的吸收系数

约为1.14。经过紫外感光后，光阻对紫外光的吸收系数

'降为原来20%，进一步根据计算得到的曝光能量进行实验，最终制作出所需的斜角为32°的楔形结构。错位叠加曝光的方法可以得到具有特定角度的楔形斜面微结构，而且该过程所需的曝光条件可以根据楔形角度进行计算。

Abstract

A kind of exposure method of dislocation and superposition was studied

which was based on a type of positive photoresist produced by T company. It can realize the effect of gray scale exposure by the method and finally a wedge-shaped bevel microstructure with specific angle was obtained. The absorption coefficient of a photoresist can be changed after irradiated by ultraviolet light. According to the Lambert-Beer law

the bevel structure can be equivalent into step structure

and then the critical exposure energy for the photoresist to react and the absorption coefficients of the photoresist can be calculated

which was irradiated by UV before and after

as well as the exposure energy for the dislocation and superposition method. Experimental results show that the critical exposure energy for the photoresist to react is 8 mJ

and the absorption coefficient

of the photoresist for ultraviolet light is 1.14

which will reduce for 20% after irradiated by ultraviolet light. With irradiating by the energy calculated

the photoresist can form the wedge bevel structure with taper angle of 32°. A specific wedge bevel structure by the dislocation and superposition exposure method can be prepared and the energy can be calculated according to the taper angle of bevel structure.

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references

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