新型TFT-LCD黑矩阵的细线化研究

靳福江; 卢兵; 朱凤稚; 罗峰; 柳星; 代伟男; 刘华; 范峻

doi:null

您当前的位置：

首页 >

文章列表页 >

新型TFT-LCD黑矩阵的细线化研究

器件物理及器件制备技术 | 更新时间：2020-08-12

- 新型TFT-LCD黑矩阵的细线化研究
- Narrow black matrix for TFT-LCD
- 液晶与显示 2014年29卷第4期页码：521-526
- 作者机构：
  
  成都京东方光电科技有限公司,四川成都,611731
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TK730.2
- 收稿日期：2013-09-29，
  
  修回日期：2013-10-11，
  
  网络出版日期：2013-11-25，
  
  纸质出版日期：2014-08-05
- 稿件说明：
移动端阅览
靳福江, 卢兵, 朱凤稚, 罗峰, 柳星, 代伟男, 刘华, 范峻. 新型TFT-LCD黑矩阵的细线化研究[J]. 液晶与显示, 2014,29(4): 521-526

JIN Fu-jiang, LU Bing, ZHU Feng-zhi, LUO Feng, LIU Xing, DAI Wei-nan, LIU Hua, FAN Jun. Narrow black matrix for TFT-LCD[J]. , 2014,29(4): 521-526
靳福江, 卢兵, 朱凤稚, 罗峰, 柳星, 代伟男, 刘华, 范峻. 新型TFT-LCD黑矩阵的细线化研究[J]. 液晶与显示, 2014,29(4): 521-526 DOI：

JIN Fu-jiang, LU Bing, ZHU Feng-zhi, LUO Feng, LIU Xing, DAI Wei-nan, LIU Hua, FAN Jun. Narrow black matrix for TFT-LCD[J]. , 2014,29(4): 521-526 DOI：

摘要

介绍了新型TFT-LCD黑矩阵细线化研究。在原有工艺设备的基础上，突破设备局限和工艺瓶颈，通过引入相掩膜技术和背面曝光设备，达到进一步减小黑矩阵线宽的效果。实验测试结果显示：在普通掩膜板设计上应用相位移掩膜板技术，降低透光区边缘衍射和散射现象，使曝光后黑矩阵线宽降低1.0~1.5 m。在原有工艺基础上添加背面曝光工艺，使黑矩阵材料在显影后进行背面曝光预固化，改善黑矩阵图形形貌，进一步减小黑矩阵线宽达到0.3~0.5 m。通过新工艺和新设备的引入和应用，黑矩阵线宽整体降低1.5~2.0 m，达到5.0~5.5 m，可以满足目前高PPI（单位面积像素个数）产品对透过率和对比度要求。

Abstract

The new study of black matrix thinner for TFT-LCD was presented in this paper. Based on the normal process technology

breaking through the limits of equipments and process bottlenecks

the affection of thinner black matrix critical dimension was worked out by adding phase shift mask and back exposure. The results show that black matrix critical dimension could be reduced 1.0~1.5 m by applied on phase shift mask that decreased the diffraction of transmission edge area. Because the back exposure technology could cure the black matrix material

the black matrix critical dimension was reduced 0.3~0.5 m. By the new technology and equipment applied

the black matrix critical dimension was decreased 1.5~2.0 m at total

which meets the requirements of high quality transmit and contrast.

关键词

Keywords

references

Zimmerman N M. A simple fabrication method for nanometer-scale thin-metal stencils [J].J. Vac. Sci. Technol. B,1997,15(2):369-372.[2] 黄子强. 液晶显示原理 [M]. 北京:国防大学出版社,2008:142-148. Hang Z Q. Principle of Liquid Crystal Display [M]. Beijing:National Defense industry Press,2008,142-148.(in Chinese)[3] 靳福江. 彩膜基板和液晶显示面板:中国,201936101U.2010-08-17. JIN F J.The color filter and the liquid crystal display panel:China,201936101U.2010-08-17. (in Chinese)[4] Bocko P L,Eid B A,Johnson R E,et al. Method for printing a color filter:US,5544582. 1996-08-13.[5] 张卓,何璇,李琳.颜料分散用树脂的合成及性能研究[J]. 液晶与显示,2010,25(4):481-485. Zhang Z,He X,Li L. Synthesis andperformance of polyacrylate resin used on pigment-dispersion [J]. Chinese Journal of Liquid Crystals and Displays,2010,25(4):481-485. (in Chinese)[6] 山田善昭. 彩色滤光片的制法及其制造装置、电光学装置、电子仪器:中国,200810002842.5. 2005-02-02. Yamada Shanaki. Method for producing a color filter,apparatus for manufacturing a color filter,electrooptic apparatus,and electronic device:China,200810002842.5. 2005-02-02. (in Chinese)[7] 王刚,杨虹,凌志华,等.高开口率TFT LCD的黑矩阵设计[J]. 液晶与显示,1999,14(3):162-165. Wang G,Yang H,Ling ZH H,et al. Design of black matrix for TFT LCD with high aperture ratio [J]. Chinese Journal of Liquid Crystals and Displays,1999,14(3):162-165. (in Chinese)[8] 董小春,杜春雷. 负性光刻胶刻蚀工艺研究[J]. 光子学报,2003,35(12):1422-1425. Dong X C,Du C L. Study on lithography of negative resists [J]. Acta Photonica Sinica,2003,12(35):1422-1425. (in Chinese)[9] 唐雄贵,姚欣,郭永康,等. 烘焙工艺条件对厚胶光刻面形的影响[J]. 微细加工技术,2005(3):31-35. Tang X G,Yao X,Guo Y K,et al. Effect of baking process condition on surface profile of lithography for thick film resists [J].Microfabrication Technology,2005(3):31-35. (in Chinese)[10] 肖星星,陈跃刚. 金属层亚波长狭缝中光波耦合[J]. 发光学报,2009,30(5):682-685. Xiao X X,Chen Y G. Investigation of optical wave coupling between two subwavelength slits in metallic sheet [J]. Chinese Journal of Luminescence,2009,30(5):682-685. (in Chinese)[11] 陈良尧,陈岳瑞,戴仲鸿,等. 可见光波在天然金属基界面正负折射机理的研究和进展[J]. 发光学报,2008,29(5):757-761. Chen L Y,Chen Y R,Dai Z H,et al. Recent progress of the researches on the positive and negative refractions of the visible light propagating at the metal-based interface [J]. Chinese Journal of Luminescence,2008,29(5):757-761. (in Chinese)[12] 彭力,陈友篷,尤春,等. 先进相移掩模(PSM)工艺技术[J]. 电子与封装,2010,10(9):41-45. Peng L,Chen Y P,You CH,et al. Advanced phase shift mask technology [J]. Electronics & Packaging, 2010,10(9):41-45. (in Chinese)

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

TFT-LCD改善“斑点不良”的研究

表面处理对液晶显示阵列基板中黑矩阵残留的影响