全无机胶体量子点显示技术

耿卫东; 郭嘉; 唐静; 刘会刚

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全无机胶体量子点显示技术

特邀报告 | 更新时间：2020-08-12

- 全无机胶体量子点显示技术
- All-inorganic colloidal quantum dots display technology
- 液晶与显示 2014年29卷第4期页码：479-484
- 作者机构：
  
  南开大学光电子薄膜器件与技术研究所光电子薄膜器件与技术天津市重点实验室光电信息技术科学教育部重点实验室天津,300071
- 作者简介：
- 基金信息：
  
  高等学校博士学科点专项科研基金资助课题（No. 20130031120034）();天津市自然科学基金（No. 13JCQNJC01200）()
- DOI：
  中图分类号： TN383
- 收稿日期：2014-04-28，
  
  修回日期：2014-05-13，
  
  网络出版日期：2014-05-18，
  
  纸质出版日期：2014-08-05
- 稿件说明：
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耿卫东, 郭嘉, 唐静, 刘会刚. 全无机胶体量子点显示技术[J]. 液晶与显示, 2014,29(4): 479-484

GENG Wei-dong, GUO Jia, TANG Jing, LIU Hui-gang. All-inorganic colloidal quantum dots display technology[J]. , 2014,29(4): 479-484
耿卫东, 郭嘉, 唐静, 刘会刚. 全无机胶体量子点显示技术[J]. 液晶与显示, 2014,29(4): 479-484 DOI：

GENG Wei-dong, GUO Jia, TANG Jing, LIU Hui-gang. All-inorganic colloidal quantum dots display technology[J]. , 2014,29(4): 479-484 DOI：

摘要

基于胶体量子点发光的全无机显示器件具有优于OLED的电致发光和抗环境性优势，将成为新一代平板显示器件。本文介绍了全无机胶体量子点显示的优势和发展潜力，介绍了GaN电荷传输层量子点显示器件、金属氧化物电荷传输层量子点显示器件、交流驱动多层结构的透明量子点显示器以及单极性量子点显示器件等。指出深入研究全无机胶体量子点发光器件的电荷输运机制，在新材料、新器件结构和新驱动机制等方面，改进器件的电致发光效率是目前需要解决的主要问题。

Abstract

The all-inorganic display device based on colloidal quantum dots have the better electroluminescence and environmental resistance characteristics than OLED

and will become the next generation flat panel display. In this paper

the advantages and potential of all-inorganic colloidal quantum dots display are described

including the quantum dot display device with GaN charge transport layer

the quantum dot display device with metal oxide charge transport layer

alternating current driven multilayer structure transparent quantum dots display device and the colloidal quantum dots display device with a unipolar device architecture. The major research direction such as charge transport mechanisms of all-inorganic colloidal quantum dots display devices

new quantum dot electroluminescent material

new device structures and new device drive mechanism to improve the electroluminescent efficiency of all-inorganic display devices was also discussed.

关键词

Keywords

references

海张锋,薛建设,喻志农,等.量子点发光在显示器件中的应用[J]. 液晶与显示, 2012,27(2):163-167. Zhang F, Xue J S, Yu Z N, et al. Quantum-dot light emitting device for display [J].Chinese Journal of Liquid Crystals and Displays, 2012, 27(2): 163-167. (in Chinese)[2] Kwak J, Bae W K, Lee D, et al. Bright and efficieny full-color colloidal quantum dot light-emitting diodes using an inverted device structure [J]. Nano Lett.,2012, 12(5):2362-2366.[3] Neshataeva E, Kuommrll T, Bacher G, et al. All-inorganic light emitting device based on ZnO nanoparticles [J]. Applied Physics Letters, 2009, 94(9): 091115/1-3.[4] Wood V, Panzer M J, Caruge J M, et al. Air-stable operation of transparent, colloidal quantum dot based LEDs with a unipolar device architecture [J]. Nano Lett., 2010, 10(1): 24-29.[5] Xuan R W, Xu J P, Zhang X S, et al. Continuously voltage-tunable electroluminescence from a monolayer of ZnS quantum dots [J].Appl. Phys. Lett., 2011, 98(4):041907/1-3.[6] 楼腾刚, 胡炼, 吴东锴,等. CdSe 胶质量子点的电致发光特性研究[J]. 无机材料学报, 2012, 27(11):1211-1215. Lou T G, Hu L, Wu D K, et al. Electroluminescent characteristics of CdSe colloidal quantum dots [J].Journal of Inorganic Materials, 2012, 27(11):1211-1215. (in Chinese)[7] 刘博智, 黎瑞锋, 宋凌云, 等. 氧化锌锡作为电子传输层的量子点发光二极管[J]. 物理学报, 2013, 62(15):158504/1-6. Liu B Z, Li R F, Song L Y, et al. QD-LED devices using ZnSnO as an electron-transporting layer [J]. Acta Phys. Sin., 2013, 62(15):158504/1-6. (in Chinese)[8] Kim T H, Cho K S, Lee E K, et al. Full-colour quantum dot displays fabricated by transfer printing [J]. Nature Photon, 2011, 5(3):176-182.[9] Caruge J M, Halpert J E, Wood V, et al. Colloidal quantum-dot light-emitting diodes with metal-oxide charge transport layers [J]. Nature Photon, 2008, 2(4): 247-250.[10] Mueller A H, Petruska M A, Achermann M, et al. Multicolor light-emitting diodes based on semiconductor nanocrystals encapsulated in GaN charge injection layers [J].Nano Lett., 2005, 5(6):1039-1044.[11] Mu W M, Zhang P, Xu J, et al. Direct-current and alternating-current driving Si quantum dots-based light emitting device [J]. IEEE Journal of Selected Topics in Quantum Electronics, 2014, 20(4):8200106 /1-6.[12] Kobayashi S, Tani Y, Kawazoe H. Quantum dot activated all-inorganic electroluminescent device fabricated using solution-synthesized CdSe/ZnS nanocrystals [J]. Japanese Journal of Applied Physics Part 2-Letters & Express Letters, 2007, 46(36-40): L966-L969.[13] Wood V, Panzer M J, Halpert J E, et al. Selection of metal oxide charge transport layers for colloidal quantum dot LEDs [J].ACS Nano, 2009, 3(11): 3581-3586.[14] Wood V, Halpert J E, Panzer M J, et al. Alternating current driven electroluminescence from ZnSe/ZnS:Mn/ZnS nanocrystals [J].Nano Lett., 2009, 9 (6):2367-2371.[15] Panzer M J, Aidala K E, Anikeeva P O, et al. Nanoscale morphology revealed at the interface between colloidal quantum dots and organic semiconductor films [J]. Nano Lett., 2010,10(7):2421-2426.[16] Wood V, Bulovic V. Colloidal quantum dot light-emitting devices [J]. Nano Reviews, 2010, 1(0): 5202-5208.[17] Bozyigit D, Wood V, Shirasaki Y, et al. Study of field driven electroluminescence in colloidal quantum dot solids [J]. J. Appl. Phys., 2012,111(11): 113701/1-7.

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