大尺寸TFT-LCD ECCP刻蚀工艺低耗整合

张定涛; 李文彬; 姚立红; 郑云友; 李伟; 袁明

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大尺寸TFT-LCD ECCP刻蚀工艺低耗整合

材料物理和化学 | 更新时间：2020-08-12

- 大尺寸TFT-LCD ECCP刻蚀工艺低耗整合
- Low consumption combination of large-sized TFT-LCD ECCP etch process
- 液晶与显示 2014年29卷第1期页码：7-14
- 作者机构：
  
  1. 北京林业大学北京,100083
  2. 北京京东方显示技术有限公司北京,100176
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN321.5
- 收稿日期：2013-07-26，
  
  修回日期：2013-09-09，
  
  纸质出版日期：2014-02-15
- 稿件说明：
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张定涛, 李文彬, 姚立红, 郑云友, 李伟, 袁明. 大尺寸TFT-LCD ECCP刻蚀工艺低耗整合[J]. 液晶与显示, 2014,29(1): 7-14

ZHANG Ding-tao, LI Wen-bin, YAO Li-hong, ZHENG Yun-you, LI Wei, YUAN Ming. Low consumption combination of large-sized TFT-LCD ECCP etch process[J]. , 2014,29(1): 7-14
张定涛, 李文彬, 姚立红, 郑云友, 李伟, 袁明. 大尺寸TFT-LCD ECCP刻蚀工艺低耗整合[J]. 液晶与显示, 2014,29(1): 7-14 DOI：

ZHANG Ding-tao, LI Wen-bin, YAO Li-hong, ZHENG Yun-you, LI Wei, YUAN Ming. Low consumption combination of large-sized TFT-LCD ECCP etch process[J]. , 2014,29(1): 7-14 DOI：

摘要

为简化大尺寸液晶面板四次光刻法的刻蚀工艺、减少有毒气体使用、降低射频功率消耗，在2 200 mm2 500 mm大尺寸玻璃上，采用正交实验设计，验证了功率、气压、反应气体和比例等参数对各刻蚀步骤刻蚀速率、均一性和选择比的影响关系，从而得到各膜层的最佳工艺条件。在Enhance Cathode Couple Plasma Mode（ECCP）刻蚀模式下，采用新刻蚀条件合并薄膜晶体管有源区非晶硅、光刻胶、湿刻后源极和漏极剩余金属钼以及沟道非晶硅层干法刻蚀。利用扫描电子显微镜（SEM）对薄膜电学特性进行测试，结果显示，金属钼的刻蚀可以采用一次两步干法刻蚀，2干2湿刻蚀可以整合为1干1湿。整合后总刻蚀工艺时间减少16 s，减少了氯气使用量和RF总功率。试验改进了均一性和刻蚀率，同时对于下底衬具有良好的选择比，保持了良好的形貌，为大批量1干1湿生产提供了依据。

Abstract

In order to simplify the lithography 4 mask etch process flow

reduce power and toxic gas volume

an orthogonal experiment was designed based on 2 200 mm2 500 mm glass substrate. Using scanning electron microscopy (SEM) and electrical properties testing

the interacting influences of power

pressure

gas and gas ratio on etching rate

uniformity and selectivity were analyzed. Meanwhile

the optimized single layer process conditions was verified.Through a novel Enhance Cathode Coupling Plasma Mode (ECCP) etch condition

we combined active

halftone

wet etch residual metal molybdenum and N-plus doped amorphous silicon layers into dry etch fully. The result shows that the metal molybdenum etch can be divided into one time two steps

consequently

"2 dry 2 wet" etching can be modified into "1 dry 1 wet".Total etch time can be reduced by 16 s;overall Cl

gas dosage and power were also decreased.Uniformity

etch rate and selectivity to bottom layer were also improved

and the profile was controlled.The study presented a critical basis of "1 dry 1 wet "future mass production.

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references

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