有机绝缘层材料聚(4-乙烯基苯酚)喷墨打印工艺研究

何慧; 王刚; 赵谡玲; 刘则; 侯文军; 代青; 徐征

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有机绝缘层材料聚(4-乙烯基苯酚)喷墨打印工艺研究

材料物理和化学 | 更新时间：2020-08-12

- 有机绝缘层材料聚(4-乙烯基苯酚)喷墨打印工艺研究
- Inkjet Printing Organic Dielectric Material-Poly(4-Vinylphenol)
- 液晶与显示 2012年27卷第5期页码：590-594
- 作者机构：
  
  1. 北京交通大学发光与光信息技术教育部重点实验室, 光电子技术研究所北京,100044
  2. 京东方科技集团技术研发中心北京,100176
- 作者简介：
- 基金信息：
  
  国家重点基础研究发展计划(973计划)(No.2010CB327704)();教育部新世纪优秀人才支持计划(No.NCET-10-0220)();中央高校基本科研业务费
- DOI：
  中图分类号： TN321+.5
- 收稿日期：2012-05-11，
  
  修回日期：2012-06-25，
  
  纸质出版日期：2012-10-15
- 稿件说明：
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何慧, 王刚, 赵谡玲, 刘则, 侯文军, 代青, 徐征. 有机绝缘层材料聚(4-乙烯基苯酚)喷墨打印工艺研究[J]. 液晶与显示, 2012,(5): 590-594

HE Hui, WANG Gang, ZHAO Su-ling, LIU Ze, HOU Wen-jun, DAI Qing, XU Zheng. Inkjet Printing Organic Dielectric Material-Poly(4-Vinylphenol)[J]. , 2012,(5): 590-594
何慧, 王刚, 赵谡玲, 刘则, 侯文军, 代青, 徐征. 有机绝缘层材料聚(4-乙烯基苯酚)喷墨打印工艺研究[J]. 液晶与显示, 2012,(5): 590-594 DOI：

HE Hui, WANG Gang, ZHAO Su-ling, LIU Ze, HOU Wen-jun, DAI Qing, XU Zheng. Inkjet Printing Organic Dielectric Material-Poly(4-Vinylphenol)[J]. , 2012,(5): 590-594 DOI：

摘要

通过压电喷墨打印方式在氧化铟锡(ITO)玻璃上直接图案化打印聚(4-乙烯基苯酚)(PVP)

研究了不同浓度PVP的电学特性

从电容、漏电流、击穿场强几个方面进行了分析。结果表明

采用打印方式得到的PVP绝缘层在0~40 V的外加电压下

漏电流密度在10

-11

~10

-8

A/cm

范围内

为打印方式制备高性能交联PVP(CL-PVP)介电层提供了必要的参考。

Abstract

The piezoelectric inkjet printing of a polymer dielectric-poly (4-vinylphenol) (PVP)

directly patterned onto Indium Tin Oxide (ITO) glasses

has been demonstrated. The electric characteristic of inkjet printed PVP dielectric films with various concentrations was studied. Capacitance

leakage current

and breakdown electric fields of the thin films were analyzed. The results show that with the applied voltage of 0~40 V

inkjet printed PVP films exhibit low leakage current density in the range of 10

-11

~10

-8

A/cm

as a necessary reference for printing a high performance cross-linked PVP (CL-PVP) insulator.

关键词

Keywords

references

Sele C W, von Werne T, Friend R H, et al. Lithography-free, self-aligned inkjet printing with sub-hundred-nanometer resolution [J]. Adv. Mater., 2005, 17(8):997-1001.

张天翼,许军,董佳垚. 胆甾型液晶显示技术和产业发展 [J]. 液晶与显示, 2011,26(6):741-745.

Bennett R, Edwards C, Lee J, et al. Precision industrial ink jet printing technology for full color PLED display and TFT-LCD manufactaring //International Display Manufacturing Conference(IDMC), Taiper, China:SID, 2003:499.

Peng X Z, Horowitz G, Fichou D, et al. All-organic thin-film transistors made of alpha-sexithienyl semiconducting and various polymeric insulating layers [J]. Appl. Phys. Lett., 1990, 57: 2013 (1990):2013-2015.

Klauk H, Halik M, Zschieschang U, et al. High-mobility polymer gate dielectric pentacene thin film transistors [J]. J. Appl. Phys., 2002, 92(9):5259-5263.

Kawase T, Sirringhaus H, Friend R H, et al. All-polymer thin film transistors fabricated by high-resolution ink-jet printing //IEDM Technical Digest:International Electron Devices Meeting (IEDM), San Francisco, USA:IEEEE 2000: 623-626.

Lin C T, Hsu C H, Chen I R, et al. Enhancement of carrier mobility in all-inkjet-printed organic thin-film transistors using a blend of poly(3-hexylthiophene) and carbon nanoparticles [J]. Thin Solid Films, 2011,519(22):8008-8012.

Tseng H Y, Subramanian V. All inkjet printed self-aligned transistors and circuits applications //IEDM Technical Digest:International Electron Devices Meeting (IEDM), Baltimore, USA:IEEE, 2009: 1-4.

Molesa S E, Vornbrock A de la F, Chang P C, et al. Low-voltage inkjetted organic transistors for printed RFID and display applications //IEDM Technical Digest:International Electron Devices Meeting (IEDM), Washington, USA:IEEE, 2005:109-112.

Chung S, Kim S O, Kwon S K, et al. All-inkjet-printed organic thin-film transistor inverter on flexible plastic substrate [J]. IEEE Electron Device Letters, 2011, 32(8):1134-1136.

Chen B, Cui T H, Liu Y, et al. All-polymer RC filter circuits fabricated with inkjet printing technology [J]. Solid-State Electronics, 2003, 47(5):841-847.

Cui T H, Liu Y, Chen B, et al. Printed polymeric passive RC filters and degradation characteristics [J]. Solid-State Electronics, 2005, 49(5):853-859.

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