
浏览全部资源
扫码关注微信
收稿日期:2012-02-28,
修回日期:2012-04-05,
网络出版日期:2012-04-09,
纸质出版日期:2012-08-15
移动端阅览
曲连杰 陈旭 郭建 闵泰烨 谢振宇 张文余. 氮化硅在触摸屏中的应用分析[J]. 液晶与显示, 2012,27(4): 466-470
. Silicon Nitride Materials Applied in Touch Sensor[J]. , 2012,27(4): 466-470
本文研究了氮化硅材料在触摸屏领域中的应用,利用等离子体化学气相沉积(PECVD)技术,在一定厚度的玻璃表面沉积不同厚度的氮化硅薄膜。通过理论分析和试验测试的方法得到了氮化硅膜层厚度和折射率对触摸屏透过率以及表面宏观颜色的影响。分析结果表明,氮化硅膜层折射率对触摸屏的平均透过率影响明显,而膜层厚度对触摸屏的平均透过率影响很小,但是膜层厚度的改变对触摸屏特定波长处透过率和膜层宏观颜色影响很明显。在实际生产中可以通过改变沉积条件获得合适折射率及厚度的氮化硅薄膜材料。
The use of silicon nitride (SiNx) in the field of touch sensor has been investigated in this paper. Silicon Nitride (SiNx) with different thickness is deposited on the surface of bare glass by plasma-enhanced chemical vapor deposition (PECVD) technology. Using theoretical analysis and experimental test method
this article illuminates the impact on the touch sensor of transmittance and macro-color caused by film thickness and the refractive index. The results show that the refractive index of SiNx has great impact on the average transmittance
while the film thickness has no obvious effect on it. The film thickness has great impact on transmittance at fixed-wavelength and the macro-color
and it is crucial to the process control.
R.N. Aguilar and G.C.M. Meijer. .Fast interface electronics for a resistive touch screen[J].IEEE Sensors,2002,2:1360-1363[2]S. P. Hotelling, J. A. Strickon, and B. Q. Huppi. .Multipoint touch screen[J].U.S Patent,2006,10/840:862-862[3]M. Takeuchi, t. Gotsu, N. Fujita, etc. .Ultrasonic Attenuation in Acoustic Touch Panels[J].IEEE Transactions on Industry Applications,2004,:1585-1590[4]P. T. Krein and RD Meadows. .The Electroquasistatics of the Capacitive Touch Panel[J].IEEE Transactions on Industry Applications,1990,26(3):529-534[5]Tong-Hun Hwang,Wen-Hai Cui, Ik-Seok Yang,etc.A Highly Area-Efficient Controller for Capacitive Touch Screen Panel Systems[J].Transactions on Consumer Electronics,2010,56(2):1115-1122[6]Z. Tang, MS. Park, S.H. Jin, etc. .Drain bias dependent bias temperature stress instability in a-Si:H TFT[J].Solid-State Electronics,2009,53:225-233[7]J-H. Shim, Seongil Im, N-H. Cho, etc..Nano structural features of nc-Si:H thin films prepared by PECVD[J].Applied Surface Science,2004,234:268-273[8]Atif Mossad Ali.Mechanisms of the growth of nanocrystalline Si:H films deposited by PECVD[J].Journal of Non-Crystalline Solids,2006,352:3126-3133[9]Jorge I. Cisneros.Optical characterization of dielectric and semiconductor thin films by use of transmission data[J].,1998,37(22):5262-5270
0
浏览量
91
下载量
0
CSCD
关联资源
相关文章
相关作者
相关机构
京公网安备11010802024621