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陕西科技大学 电气与信息工程学院,陕西 西安,710049
收稿日期:2011-12-19,
修回日期:2012-04-09,
网络出版日期:2012-08-15,
纸质出版日期:2012-08-15
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邱西振, 张方辉, 丁磊. 一体化封装的LED仿真[J]. 液晶与显示, 2012,(4): 499-502
QIU Xi-zhen, ZHANG Fang-hui, DING Lei. Optical Simulation of Integrated Package of LED[J]. , 2012,(4): 499-502
以自主研发的一体化封装LED为模型
使用光学模拟软件TracePro对该模型的配光进行仿真。为了优化该模型的光强分布及出光率
对比分析了不同反光杯张角及透镜形状对LED配光性能的影响。仿真结果表明:反光杯张角及透镜形状对LED的光强分布及出光率均有较强影响。45反光杯张角有着较好的光强分布。添加透镜可以提高出光率
扁平透镜可以达到较高的出光率。45反光杯张角加半球形透镜在光强分布与出光率上取得均衡。
Using the optical software TracePro
the light distribution of our self-developed integration package of LED is simulated. In order to optimize the light distribution and extraction of the model
the different shapes of lens and inclination of reflectors were analyzed. The results of simulation show that there is a strong impact on light distribution with different lens and reflectors. There is an uniform light distribution with the 45? reflector. The light extraction will be improved by lens
meanwhile the flat lens can achieve a higher light extraction. The 45? reflector with hemispherical lens can achieve a balance between light distribution and extraction.
Li Y Q, van Steen J E J, van Kervel J W H, et al. Luminescence properties of red-emitting M2Si5N8 :Eu2+(M=Ca, Sr, Ba) LED conversion phosphors [J]. Journal of Alloys and Compounds, 2006, 417(1):273-279.[2] Sun X Y, Zhang J H, Zhang X, et al. A green-yellow emitting β-Sr2SiO4 :Eu2+ phosphor for near ultraviolet chipwyhite-light-emitting diode [J]. J. Rare Earth, 2008, 26(3):421-424.[3] Zhu C F, Liang X L,Yang Y X, et al. Luminescence properties of Tb doped and Tm/Tb/Sm co-doped glasses for LEDappications [J]. J. Lumin., 2010, 130(1):74-77.[4] Jung K Y, Kim J H, Kang Y C. Luminescence enhancement of Eu-doped calcium magnesium silicate blue phosphor for UV-LED application [J]. J. Lumin., 2009, 129(6): 615-619.[5] Nishida T, Saito H, Kobayashi N. Efficient and high-power AlGaN-based ultraviolet light-emitting diode grown on bulk GaN [J]. Appl. Phys. Lett., 2001, 79(6):711-712.[6] Fujii T, Gao Y, Sharma R,et al. Increase in the extraction efficiency of Gan-based light-emitting diodes via surface roughening [J].Appl. Phys. Lett., 2004, 84(6):855-857.[7] Niu N H, Wang H B, Liu J P,et al. Enhanced luminescence of InGaN/GaN multiple quantum wells by strain reduction [J].Solid-State Electronics, 2007, 51(6):860-864.[8] Huang H W, Kao C C, Chu J T,et al. Improvement of InGaN-GaN light-emitting diode performance with a nano-roughened p-GaN surface [J]. IEEE Photonics Technology Lett., 2005, 17(5):983-985.[9] Luo H, Kim J K, Schubert E F,et al. Trapped whispering-gallery optical modes in white light-emitting diode lamps with remote phosphor [J]. Appl. Phys. Lett., 2006, 89(4):041125.[10] 田大垒, 关荣锋,王杏. 新型封装材料与大功率封装热管理 [J]. 电子元件与材料, 2007, 26(8):5-9.[11] 严萍, 李剑清. 照明用LED光学系统的计算机辅助设计 [J]. 半导体光电, 2004, 25(3):181-200.
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