多晶硅薄膜晶体管亚阈值区准二维模型

吴为敬

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多晶硅薄膜晶体管亚阈值区准二维模型

器件制备技术及器件物理 | 更新时间：2020-08-12

- 多晶硅薄膜晶体管亚阈值区准二维模型
- Quasi-Two-Dimensional Subthreshold Current Model for Polysilicon Thin Film Transistors
- 液晶与显示 2010年25卷第4期页码：523-526
- 作者机构：
  
  华南理工大学材料科学与工程学院, 广东广州 510641,E-mail: wuwj@scut.edu.cn
- 作者简介：
  
  [ "吴为敬(1979-),男,福建福州人, 工学博士,讲师,主要从事低温多晶硅薄膜晶体管特性及TFT阵列的研究。" ]
- 基金信息：
  
  中央高校基本科研业务费专项资金资助(No.x2clD2104790)()
- DOI：
  中图分类号： TN321+.5
- 收稿日期：2010-03-18，
  
  修回日期：2010-04-15，
  
  网络出版日期：2010-08-20，
  
  纸质出版日期：2010-08-20
- 稿件说明：
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吴为敬. 多晶硅薄膜晶体管亚阈值区准二维模型[J]. 液晶与显示, 2010,25(4): 523-526

WU Wei-jing. Quasi-Two-Dimensional Subthreshold Current Model for Polysilicon Thin Film Transistors[J]. 液晶与显示, 2010,25(4): 523-526
吴为敬. 多晶硅薄膜晶体管亚阈值区准二维模型[J]. 液晶与显示, 2010,25(4): 523-526 DOI：

WU Wei-jing. Quasi-Two-Dimensional Subthreshold Current Model for Polysilicon Thin Film Transistors[J]. 液晶与显示, 2010,25(4): 523-526 DOI：

摘要

从准二维泊松方程出发

结合多晶硅扩散和热发射载流子输运理论

建立了多晶硅薄膜晶体管亚阈值电流模型。由表面势方程及亚阈值电流方程求得包含陷阱态和晶粒尺寸的亚阈值斜率解析表达式。模型具有简明的表达式

并且在大晶粒和低陷阱态情形下可简化为传统长沟道MOSFET亚阈值区模型。仿真结果与试验数据符合得很好

验证了模型的正确性。

Abstract

Based on the diffusion and thermal emission processes

an analytical subthreshold current model for polysilicon thin film transistors (poly-Si TFTs) is developed by a quasi- two-dimensional solution. An analytical expression of the subthreshold swing is subsequently obtained from the surface potential equation and the subthreshold current expression

which takes into account the grain size and trap states. This model has a simple functional form and it can reduce to that of the conventional long channel MOSFET in the case of large grain size and low trap states. The model has been verified by a good agreement between simulated results and experimental data.

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references

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