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1. 中山大学 物理科学与工程技术学院 光电材料与技术国家重点实验室
2. 显示材料与技术广东省重点实验室,广东 广州 5102775
收稿日期:2010-01-25,
修回日期:2010-05-27,
网络出版日期:2010-08-20,
纸质出版日期:2010-08-20
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苏赞加, 刘 飞, 李 力, 莫富尧, 金顺玉, 陈 军, 邓少芝, 许宁生. 大面积超长氮化铝纳米线的制备及场发射特性研究[J]. 液晶与显示, 2010,25(4): 546-550
SU Zan-jia, LIU Fei, LI Li, MO Fu-yao, JIN Shun-yu, CHEN Jun, DENG Shao-zhi, XU Ning-sheng. Preparation of Ultra-Long AlN Nanowires and Investigation on Their Field Emission Properties[J]. 液晶与显示, 2010,25(4): 546-550
苏赞加, 刘 飞, 李 力, 莫富尧, 金顺玉, 陈 军, 邓少芝, 许宁生. 大面积超长氮化铝纳米线的制备及场发射特性研究[J]. 液晶与显示, 2010,25(4): 546-550 DOI:
SU Zan-jia, LIU Fei, LI Li, MO Fu-yao, JIN Shun-yu, CHEN Jun, DENG Shao-zhi, XU Ning-sheng. Preparation of Ultra-Long AlN Nanowires and Investigation on Their Field Emission Properties[J]. 液晶与显示, 2010,25(4): 546-550 DOI:
报道了一种通过直接氮化Al粉合成氮化铝(AlN)纳米线的方法。该方法无需任何催化剂
并且可以获得大面积的单一形貌的AlN纳米线。所制备的AlN纳米线的平均长度超过20 m
直径为30~125 nm
是沿着[001]方向生长的单晶六方纤锌矿结构。场发射特性测试结果表明
AlN超长纳米线的开启电场为6.3 V/m
阈值电场为12.2 V/m
最大电流密度达1 440 A/cm
2
。这暗示着 AlN超长纳米线是一种很有潜力的冷阴极纳米材料。
This paper reports a catalyst-free method to prepare ultra-long aluminum nitride nanowires in large-area by direct nitridation of Al powder. The as-prepared AlN nanowires have a mean length of over 20 m and a diameter ranging between 30 nm and 125 nm. The AlN nanowires are all single crystalline hexagonal wurtzite structures and grow along [001] direction. Field emission measurements show that the turn-on field and threshold field of AlN ultra-long nanowires is respectively 6.3 V/m and 12.2 V/m
and their maximum current density can reach 1 440 A/cm
2
which suggests it is a kind of promising cold cathode material candidate in field emission display (FED).
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