原位SiNx掩膜生长GaN材料的应力及其对光学性质的影响

李夏南; 于乃森; 曹保胜; 丛妍; 周均铭

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原位SiN_x掩膜生长GaN材料的应力及其对光学性质的影响

材料物理和化学 | 更新时间：2020-08-12

- 原位SiN_x掩膜生长GaN材料的应力及其对光学性质的影响
- Stress and Effect on Optical Properties of GaN Epilayers Grown by Using Porous SiN_x Interlayers
- 液晶与显示 2010年25卷第6期页码：776-779
- 作者机构：
  
  1. 大连民族学院理学院光电子技术研究所, 辽宁大连 116600
  2. 中国科学院物理研究所凝聚态物理国家实验室北京,100080
- 作者简介：
- 基金信息：
  
  大连民族学院博士科研启动基金(No.20096206)()
- DOI：
  中图分类号： TN304.055
- 收稿日期：2010-03-18，
  
  修回日期：2010-05-11，
  
  网络出版日期：2010-12-20，
  
  纸质出版日期：2010-12-20
- 稿件说明：
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李夏南, 于乃森, 曹保胜, 丛妍, 周均铭. 原位SiNx掩膜生长GaN材料的应力及其对光学性质的影响[J]. 液晶与显示, 2010,25(6): 776-779

LI Xia-nan, YU Nai-sen, CAO Bao-sheng, ZHOU Jun-ming. Stress and Effect on Optical Properties of GaN Epilayers Grown by Using Porous SiNx Interlayers[J]. , 2010,25(6): 776-779
李夏南, 于乃森, 曹保胜, 丛妍, 周均铭. 原位SiNx掩膜生长GaN材料的应力及其对光学性质的影响[J]. 液晶与显示, 2010,25(6): 776-779 DOI：

LI Xia-nan, YU Nai-sen, CAO Bao-sheng, ZHOU Jun-ming. Stress and Effect on Optical Properties of GaN Epilayers Grown by Using Porous SiNx Interlayers[J]. , 2010,25(6): 776-779 DOI：

摘要

研究了以金属有机化学气相沉积方法生长在SiN

掩模层的GaN的应力状态

以及应力对光学性质的影响。通过微区拉曼光谱对应力进行了表征

结果显示

随着SiN

掩模淀积时间的增加

其上生长的GaN应力会相应地

释放。相应地

低温光致发光测试显示

施主束缚激子发光峰峰位出现明显的红移。我们认为

随着SiN

掩模淀积时间的增加

掩模覆盖度的增大

促进了侧向外延的生长

释放了压应力

进而影响了材料的光学性质。

Abstract

The stress state and its effect on optical properties of GaN films grown on porous SiN

interlayers by using metal organic chemical vapor deposition (MOCVD)method are investigated. The stress is characterized by the frequency shift based on micro-Raman spectroscopy measurement. It shows that more residual stress in GaN film grown on the SiN

interlayers is relaxed when the time of in situ SiN

deposition is increased. Accordingly

the donor bound extion(DBE) peak shows red shift in low temperature photoluminescence(PL) measurement. We assume that the increasing time of in situ SiN

deposition enlarging the lateral overgrowth area is the main reason to reduce the residual stress and influence corresponding optical properties.

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references

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