基于In-Zn-Ti-O氧化物半导体材料的薄膜晶体管

姚绮君; 李曙新; 张 群

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基于In-Zn-Ti-O氧化物半导体材料的薄膜晶体管

器件制备技术及器件物理 | 更新时间：2020-08-12

- 基于In-Zn-Ti-O氧化物半导体材料的薄膜晶体管
- Thin Film Transistors Based on In-Zn-Ti-O Oxide Channel Layer
- 液晶与显示 2010年25卷第4期页码：569-571
- 作者机构：
  
  1. 复旦大学材料科学系,上海 200433,E-mail: yqj01@yahoo.com.cn
  2. 天马微电子股份有限公司,深圳 518118
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O753.2
- 收稿日期：2010-03-17，
  
  修回日期：2010-05-02，
  
  网络出版日期：2010-08-20，
  
  纸质出版日期：2010-08-20
- 稿件说明：
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姚绮君, 李曙新, 张群. 基于In-Zn-Ti-O氧化物半导体材料的薄膜晶体管[J]. 液晶与显示, 2010,25(4): 569-571

YAO Qi-jun, LI Shu-xin, ZHANG Qun. Thin Film Transistors Based on In-Zn-Ti-O Oxide Channel Layer[J]. 液晶与显示, 2010,25(4): 569-571
姚绮君, 李曙新, 张群. 基于In-Zn-Ti-O氧化物半导体材料的薄膜晶体管[J]. 液晶与显示, 2010,25(4): 569-571 DOI：

YAO Qi-jun, LI Shu-xin, ZHANG Qun. Thin Film Transistors Based on In-Zn-Ti-O Oxide Channel Layer[J]. 液晶与显示, 2010,25(4): 569-571 DOI：

摘要

在室温下制备了基于In-Zn-Ti-O氧化物半导体的薄膜晶体管

氧化物沟道层中In、Zn、Ti的摩尔比为49 ∶ 49 ∶ 2。所制备的器件场致迁移率达到9.8 cm

/Vs

开关比大于10

亚阈值摆幅0.61 V/dec。和未掺Ti器件的比较表明

掺Ti能使器件阈值正向变化

对场致迁移率也有提高作用。

Abstract

Thin film transistors based on In-Zn-Ti-O oxide channel layer were fabricated at room temperature. The atomic proportion of In

Zn and Ti in channel layer is 49 ∶ 49 ∶ 2. The device with field effect mobility of 9.8 m

/Vs

on-off ratio higher than 10

and subthres-hold swing of 0.61/dec was obtained. While compared with devices without Ti doping

it is found that Ti-doping increases the threshold voltage in the positive direction and improves the field effect mobility of the devices.

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references

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