过渡层对类球状微米金刚石聚晶的场发射影响

张武勤; 高金海

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过渡层对类球状微米金刚石聚晶的场发射影响

材料物理和化学 | 更新时间：2020-08-12

- 过渡层对类球状微米金刚石聚晶的场发射影响
- Effect of Suffer Layer on Field Emission Properties of Globe-Like Diamond Microcrystalline-Aggregate
- 液晶与显示 2010年25卷第4期页码：519-522
- 作者机构：
  
  1. 郑州大学电气工程学院,河南郑州 450044,E-mail:zhangwuqin@126. com
  2. 郑州师范高等专科学校物理系, 河南郑州 450044
- 作者简介：
- 基金信息：
  
  教育部科学技术重点资助项目(No.205091)()
- DOI：
  中图分类号： O484;TB383
- 收稿日期：2010-02-03，
  
  修回日期：2010-04-21，
  
  网络出版日期：2010-08-20，
  
  纸质出版日期：2010-08-20
- 稿件说明：
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张武勤, 高金海. 过渡层对类球状微米金刚石聚晶的场发射影响[J]. 液晶与显示, 2010,25(4): 519-522

ZHANG Wu-qin, GAO Jin-hai. Effect of Suffer Layer on Field Emission Properties of Globe-Like Diamond Microcrystalline-Aggregate[J]. 液晶与显示, 2010,25(4): 519-522
张武勤, 高金海. 过渡层对类球状微米金刚石聚晶的场发射影响[J]. 液晶与显示, 2010,25(4): 519-522 DOI：

ZHANG Wu-qin, GAO Jin-hai. Effect of Suffer Layer on Field Emission Properties of Globe-Like Diamond Microcrystalline-Aggregate[J]. 液晶与显示, 2010,25(4): 519-522 DOI：

摘要

在陶瓷衬底上通过磁控溅射方法镀上金属Ti层后

改用CH

为溅射气体制备一层碳化物过渡层

利用微波等离子体化学气相沉积(MPCVD)法制备出类球状微米金刚石聚晶薄膜。利用扫描电子显微镜、拉曼光谱和x-射线衍射分析了薄膜的结构和表面形貌。测试了类球状微米金刚石聚晶膜的场致电子发射特性

有过渡层制备的类球状微米金刚石聚晶膜的场发射开启电场仅为0.9 V/m

在2.5 V/m的发射电场下电流密度是10.8 mA/cm

而无过渡层制备的类球状微米金刚石聚晶膜的开启电场为1.27 V/m

在2.5V/m的发射电场下电流密度是0.5 mA/cm

。实验结果表明

有碳化物过渡层的类球状微米金刚石聚晶薄膜的场发射特性效果更好。

Abstract

The ceramic with a Ti mental layer was used as substrate by magnetron sputtering method. The carbide was made on the substrate by methane sputtering. The globe-like diamond microcrystalline-aggregates were fabricated by microwave plasma chemical vapor deposition (MPCVD) method. The fabricated diamond aggregates were evaluated by Raman scattering spectroscopy

scanning better electron microscopy (SEM)

x-ray diffraction(XRD). The field emission properties were tested by using a diode structure in a vacuum chamber. A phosphor-coated indium tin oxide(ITO) anode was used for observing and characterizing the field emission. It was found that the globe-like diamond microcrystalline-aggregates with carbide layer exhibited better electron emission properties than the ones without carbide layer.

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references

Fink R L, Tolt Z L , Yaniv Z.Carbon nano-/micro-structures in field emission: environmental stability and field enhancement distribution

.Surf. Coat. Technol.,1998,570(6):108-109.

梅山孩,冯涛,孙卓,等.电泳电压对碳纳米管沉积薄膜及阴极场发射特性影响

. 液晶与显示, 2008,23(４):478-482.

Chung S J, Moon J H, Park K C, et al.Field emission properties of the globe-like diamond microcrystalline aggregate films grown by MPCVD

.Appl. Phys.,1997,82(4):4047-4049.

曹连振,蒋红,宋航,等.热CVD法制备的碳纳米管线阵列的场发射特性

. 液晶与显示, 2009,24(１):43-46.

Zhu W, Konchanski G P, Jin S, et al.Electron field emission properties of diamond

. Appl. Phys. Lett., 1995,67(3):1153-1157.

Obraztsov A N, Pavlovsky L Y, Voldov A P.Characterization and application of thin film carbon nanotube material

.J. Vac. Sci. Technol. B,1999,17(2):659-665.

Pradhan D, Lee Y C.Pao C W, et al. Low temperature growth of ultrananocrystalline diamond film and its field emission properties

.Damond Relat. Mater.,2006,15 (11-12): 2001-2005.

Xu N S, Latham R V (Ed).High Voltage Vacuum Insulation

.London:Academic Press, 1995.

Tachibana T, Williams B E, Glass J T.Correlation of the electrical properties of metal contacts on diamond films with the chemical nature of the metal-diamond interface. Ⅱ. Titanium contacts: A carbide-forming metal

. Phys. Rev. B, 1992,45(20):11975-11981.

Kiyota H, Higashi M, Kurosu T, et al. Field emission from amorphous carbon films grown by electrochemical deposition using methanol liquid.

.J. Appl. Phys., 2006,99(9):094903(1-6).

Gruen D M.Ultrananocrystalline Diamond Films from Fullerene Precursors

.Argonne, USA:Rev. Mater. Sci.,1999:211.

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球状微米金刚石的制备过程及其场发射性能的研究