反应溅射法制备氮化铝薄膜及工作气压对其场发射性能的影响

李松玲; 王如志; 赵维; 王波; 严辉

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反应溅射法制备氮化铝薄膜及工作气压对其场发射性能的影响

器件制备技术及器件物理 | 更新时间：2020-08-12

- 反应溅射法制备氮化铝薄膜及工作气压对其场发射性能的影响
- Effects of Pressure on Field Emission Characteristics of AlN Thin Films Prepared by RF Reactive Magnetron Sputtering
- 液晶与显示 2010年25卷第6期页码：792-797
- 作者机构：
  
  北京工业大学材料科学与工程学院,北京 100124
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目(No.11074107)();北京市学术创新团队建设计划(No.PHR201007101)();北京市科技新星计划(No. 2008B10)();
- DOI：
  中图分类号： TN873
- 收稿日期：2010-04-08，
  
  修回日期：2010-05-10，
  
  网络出版日期：2010-12-20，
  
  纸质出版日期：2010-12-20
- 稿件说明：
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李松玲, 王如志, 赵维, 王波, 严辉. 反应溅射法制备氮化铝薄膜及工作气压对其场发射性能的影响[J]. 液晶与显示, 2010,25(6): 792-797

LI Song-ling, WANG Ru-zhi, ZHAO Wei, WANG Bo, YAN Hui. Effects of Pressure on Field Emission Characteristics of AlN Thin Films Prepared by RF Reactive Magnetron Sputtering[J]. , 2010,25(6): 792-797
李松玲, 王如志, 赵维, 王波, 严辉. 反应溅射法制备氮化铝薄膜及工作气压对其场发射性能的影响[J]. 液晶与显示, 2010,25(6): 792-797 DOI：

LI Song-ling, WANG Ru-zhi, ZHAO Wei, WANG Bo, YAN Hui. Effects of Pressure on Field Emission Characteristics of AlN Thin Films Prepared by RF Reactive Magnetron Sputtering[J]. , 2010,25(6): 792-797 DOI：

摘要

采用反应磁控溅射法在不同工作气压(0.5～2.0 Pa)下沉积了一系列氮化铝(AlN)薄膜。研究发现

在保持其他工艺参数不变的条件下

工作气压对薄膜厚度的影响很小。场发射性能测试表明

在较低的工作气压(0.5 Pa和0.7 Pa)下制备的AlN薄膜具有一定的场发射性能。扫描电子显微镜(SEM)图像显示

在较高的工作气压(2.0 Pa)下制备的薄膜易产生空位及微空洞等缺陷

使薄膜致密性下降。电子在薄膜中的输运因受到缺陷的散射而不能隧穿表面势垒进行发射。研究表明

为获得具有良好场发射性能的AlN薄膜

若采用反应磁控溅射法

应选取较低的工作气压;同时

对于薄膜型阴极

具有紧密晶粒结构及较小缺陷的薄膜可能具有更优异的场发射性能。

Abstract

Aluminum nitride (AlN) thin films were prepared by radio frequency (RF) reactive magnetron sputtering at the pressure ranging from 0.5 Pa to 2.0 Pa. Keeping the invariant process parameters

the thickness of the films changed very small by changing the working pressure. The field emission (FE) measurement showed that the FE current can be observed only for these films prepared under the lower work pressure 0.5 Pa and 0.7 Pa. The scanning electron microscope (SEM) images showed that the films prepared with higher working pressure (2.0 Pa) are easy to form vacancy and micro-voids. Then electrons transport in the films will be scattered by the defects and cant tunneling through surface barrier and no FE appearing. It suggests that for AlN films prepared by RF reactive magnetron sputtering

to get excellent FE properties

a lower pressure may be better. The study also indicates that the films with more compact grains and smaller defects may have excellent FE properties.

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references

Brodie I, Schwoebel P R. Vacuum microelectronic devices [J]. Proceeding of the IEEE, 1994, 82(7):1006-1034.[2] Mahanandia P, Arya V, Bhotla P V, et al. semialigned carbon nanofibers grownon cylindrical copper surface [J]. Appl. Phys. Lett., 2009, 95(8):083108(1-3).[3] Joseph P T, Tai N H, Lee C Y, et al. Field emission enhancement in nitrogen-ion-implanted ultrananocrystalline diamond films [J]. J. Appl. Phys., 2008, 103(4):043720(1-7).[4] You J B, Zhang X W. Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment [J]. Appl. Phys. Lett., 2009, 94(26): 262105(1-3).[5] Thapa R, Saha B, Chattopadhyay K K. Enhanced field emission from Si doped nanocrystalline AlN thin films [J]. Appl. Surf. Sci., 2009, 255(8):4536-4541.[6] Huang A P, Paul K, Wu X L, et al. Enhanced electron field emission from oriented columnar AlN [J]. Appl. Phys. Lett., 2006, 88(25):251103(1-3).[7] Zhao Q, Feng S Q, Zhu Y Z, et al. Annealing effects on the field emission properties of AlN nanorods [J]. Nanotechnology, 2006, 17(11):S351-S354.[8] Tang Y B, Cong H T, Wang Z M, et al. Catalyst-seeded synthesis and field emission properties of flowerlike Si-doped AlN nanoneedle array [J]. Appl. Phys. Lett., 2006, 89(25): 253112(1-3).[9] Wang Y X, Li Y A, Feng W, et al. Influence of thickness on field emission characteristics of AlN thin films [J]. App. Surf.Sci., 2005, 243(1-4):394-400.[10] Ji X Y, Zhang Q Y, Lau S P, et al. Temperature-dependent photoluminescence and electron field emission properties of AlN nanotip arrays [J]. Appl. Phys. Lett., 2009, 94(17): 173106 (1-3).[11] Bian H J, Chen X F, Pan J S, et al. Excellent field emission from Effects of sputtering pressure on the field emission properties of N-doped SrTiO3 [J]. Appl. Surf. Sci., 2009, 255(9):4867-4872.[12] Vashaei Z, Aikawa T, Ohtsuka M, et al. Influence of sputtering parameters on the crystallinity and crystal orientation of AlN layers deposited by RF sputtering using the AlN target [J]. Crystal Growth, 2009, 311(3): 459-462.[13] Yue S L, Shi C Y. Enhanced electron field emission from oriented AlN films [J]. J. Appl. Phys., 2006, 99(9):094908(1-4).[14] Lee J H. Effects of sputtering pressure and thickness on properties of ZnO:Al films deposited on polymer substrates [J]. J. Electroceram, 2009, 23(1-4):512-518.[15] Hwang D K, Oh M S, Choi Y S, et al. Effect of pressure on the properties of phosphorus-doped p-type ZnO thin films grown by radio frequency-magnetron sputtering [J]. Appl. Phys. Lett., 2008, 92(16):161109(1-3).[16] Negi S, Bhandari R, Rieth L, et al. Effect of sputtering pressure on pulsed-DC sputtered iridium oxide films [J]. Sensor and Actuators B:Chemical, 2009, 137(1): 370-387.[17] Seki K, Xu X Q. Room-temperature growth of AIN thin films by laser ablation [J]. Appl. Phys. Lett., 1992, 60(18):2234-2236.[18] Wu Q, Hu Z, Wang X Z, et al. Synthesis and optical characterization of aluminum nitride Nanobelts [J]. J. Phys. Chem. B, 2003, 107(36):9726-9729.[19] 程守洙, 江之久. 普通物理学 [M]. 北京: 教育出版社, 1982.[20] 徐学基, 诸定昌. 气体放电物理 [M]. 上海: 复旦大学出版社, 1996.[21] Cutler P H, Miskovsky N M, Lerner P B, et al. The use of internal field emission to inject electronic charge carriers into the conduction band of diamond films:a review [J]. Appl. Surf. Sci., 1999, 146(1-4): 126-133.[22] Zhao Q, Xu J, Xu X Y, et al. Field emission from AlN nanoneedle arrays [J]. Appl. Phys. Lett., 2004, 85(22):5331-5333.

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