蓝宝石图形衬底上生长GaN的微区拉曼光谱研究

于乃森; 郭丽伟; 彭铭征; 朱学亮; 王晶; 贾海强; 陈弘; 周均铭

doi:null

您当前的位置：

首页 >

文章列表页 >

蓝宝石图形衬底上生长GaN的微区拉曼光谱研究

材料物理和化学 | 更新时间：2020-08-12

- 蓝宝石图形衬底上生长GaN的微区拉曼光谱研究
- Micro-Raman Spectroscopy Characterization of GaN-Grown on Maskless Periodically Grooved Sapphire Fabricated by Wet Chemical Etching
- 液晶与显示 2010年25卷第1期页码：17-20
- 作者机构：
  
  1. 2. 中国科学院物理研究所凝聚态物理国家实验室北京,100080
  2. 大连民族学院理学院光电子研究所,辽宁大连,116600
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN304
- 收稿日期：2009-06-18，
  
  修回日期：1900-01-02，
  
  网络出版日期：2010-02-20，
  
  纸质出版日期：2010-02-20
- 稿件说明：
移动端阅览
于乃森;郭丽伟;彭铭征;朱学亮;王晶;贾海强;陈弘;周均铭. 蓝宝石图形衬底上生长GaN的微区拉曼光谱研究[J]. 液晶与显示, 2010,25(1): 17-20

YU Nai-sen;GUO Li-wei;ZHU Xue-liang;WANG Jing;JIA Hai-qiang;CHEN Hong;ZHOU Jun-ming. Micro-Raman Spectroscopy Characterization of GaN-Grown on Maskless Periodically Grooved Sapphire Fabricated by Wet Chemical Etching[J]. 液晶与显示, 2010,25(1): 17-20
于乃森;郭丽伟;彭铭征;朱学亮;王晶;贾海强;陈弘;周均铭. 蓝宝石图形衬底上生长GaN的微区拉曼光谱研究[J]. 液晶与显示, 2010,25(1): 17-20 DOI：

YU Nai-sen;GUO Li-wei;ZHU Xue-liang;WANG Jing;JIA Hai-qiang;CHEN Hong;ZHOU Jun-ming. Micro-Raman Spectroscopy Characterization of GaN-Grown on Maskless Periodically Grooved Sapphire Fabricated by Wet Chemical Etching[J]. 液晶与显示, 2010,25(1): 17-20 DOI：

摘要

采用微区拉曼光谱对生长在湿法腐蚀获得的无掩膜周期性图形蓝宝石衬底上GaN材料做了研究，结果显示，侧向外延生长区域具有较低的压应力。采用湿法腐蚀结合原子力显微镜对材料的位错进行了表征，侧向外延区域显示了低的位错密度，具有较高的晶体质量。另外通过对不同生长区域的拉曼纵光学声子与等离子体激元形成的耦合模高频支进行拟合，结果显示侧向外延区域具有较低的背底载流子浓度。研究认为，由于采用图形衬底，侧向外延区域悬空生长降低了位错密度，同时侧向外延区域不与蓝宝石接触，因此采用该方法生长的GaN材料具有较低的压应力和较低的背底载流子浓度。

Abstract

Micro-Raman spectroscopy is performed to characterize GaN films grown on the patterned sapphire (0001) fabricated by wet chemical etching. The stress distributions are characterized by the frequency shift in the micro-Raman spectroscopy measurements. Residual stress state and carrier concentration in the mesa and wing region are assessed. The wing region shows lower compressive stress and less carrier concentration in comparison with mesa region. That is due to the interactions between sapphires and GaN as the result of diffe-rences in the coefficients of thermal expansion are excluded in the wing region by adopting maskless periodically grooved sapphire

thus less compressive stress and lower background carrier concentration can be achieved by this method.

关键词

Keywords

references

姚雨,靳彩霞,董志江,等.用表面粗化ITO的欧姆接触提高GaN基LED性能 [J]. 液晶与显示,2007,22(3):273-277.

王连红, 梁建, 马淑芳,等. CVD法制备硅基氮化镓薄膜 [J]. 发光学报,2008, 29(1):152-155.

周绪荣, 秦志新, 鲁麟,等. 蓝宝石衬底上GaN/AlxGa1-xN超晶格插入层对AlxGa1-xN外延薄膜应变及缺陷密度的影响 [J]. 发光学报,2008, 29(4):701-706.

Jiang H X, Jin S X, Li J, et al. Ⅲ-nitride blue microdisplays [J]. Appl. Phys. Lett., 2001, 78(9): 1303-1305.

Xie Z L, Zhang R, Jiang R L, et al. Structural and optical characteristics of AlxGa1-xN/AlN superlattice [J]. Sci. China Ser E-Tech. Sci., 2009, 52(2):332-335.

Marchand H, Ibbetson J P, Fini P T, et al. Mechanisms of lateral epitaxial overgrowth of gallium nitride by metalorganic chemical vapor deposition [J]. J. Crystal Growth, 1998, 195(5):328-332.

Tarsa E J, Heying B, Wu X H, Fini P,et al. Homoepitaxial growth of GaN under Ga-stable and N-stable conditions by plasma-assisted molecular beam epitaxy [J]. J. Appl. Phys., 1997,(82):5472-5475.

Demangeot F, Frandon J, Renucci M A, et al. Raman determination of the phonon deformation potentials in α-GaN [J]. Solid State Commun.,1996,100(4):207-210.

Kuball M, Demangeot F, Frandon J, et al. Thermal stability of GaN investigated by raman scattering [J]. Appl. Phys. Lett., 1998,73(17):960-962.

Wen T C, Lee W I, Sheu J K, et al. Observation of dislocation etch pits in epitaxial lateral overgrowth GaN by wet etching [J]. Solid-State Electronics, 2002,46:555-558.

Carlone C, Lakin K M, Shanks H R. Optical phonons of aluminum nitride [J]. J. Appl. Phys., 1984,55:4010-4014.

Alexson D, Bergman L, Dutta M,et al. Confinded phonons and phonon-mode properties of Ⅲ-Ⅴ nitride with wurtzite crystal structure [J].Physics B, 1999,263-264(3):510-513.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

原位SiN_x掩膜生长GaN材料的应力及其对光学性质的影响