ZnO薄膜及ZnO-TFT的性能研究

马仙梅; 荆 海; 马 凯; 王龙彦; 王中健

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ZnO薄膜及ZnO-TFT的性能研究

器件制备技术及器件物理 | 更新时间：2020-08-12

- ZnO薄膜及ZnO-TFT的性能研究
- ZnO Films and Properties of ZnO-TFT
- 液晶与显示 2009年24卷第3期页码：393-395
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 中国科学院长春光学精密机械与物理研究所,吉林,长春 130033,E-mail:maxianmei509@126.com
  3. 北方液晶工程研究开发中心,吉林长春,130031
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN321+.5;TN304.2+1
- 收稿日期：2009-02-06，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-06-30，
  
  纸质出版日期：2009-06-30
- 稿件说明：
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马仙梅;荆海;马凯;王龙彦;王中健;. ZnO薄膜及ZnO-TFT的性能研究[J]. 液晶与显示, 2009,24(3): 393-395

MA Xian-mei;JING Hai;MA Kai;WANG Long-yan;WANG Zhong-jian;. ZnO Films and Properties of ZnO-TFT[J]. 液晶与显示, 2009,24(3): 393-395
马仙梅;荆海;马凯;王龙彦;王中健;. ZnO薄膜及ZnO-TFT的性能研究[J]. 液晶与显示, 2009,24(3): 393-395 DOI：

MA Xian-mei;JING Hai;MA Kai;WANG Long-yan;WANG Zhong-jian;. ZnO Films and Properties of ZnO-TFT[J]. 液晶与显示, 2009,24(3): 393-395 DOI：

摘要

采用MOCVD法在SiN

绝缘薄膜上生长了ZnO薄膜

通过X射线衍射与光致发光光谱表征了ZnO薄膜的质量。其结果是:XRD特征峰半高全宽0.176

光致发光仅有381.1 nm的发光峰

展现了ZnO薄膜光电特性的优势。制备了底栅型ZnO 薄膜晶体管

测试表明器件具有明显的场效应特性及饱和特性。

Abstract

ZnO films were grown on SiN

/glass substrate by the method of MOCVD. The qualities of the ZnO films were characterized by XRD and photo luminescence spectra. The results indicated that the full width at half height of XRD intrinsic peak is 0.176

and there is only a peak at 381.1 nm in the PL spectra. Both results exhibit the preponderance of our ZnO films in their photoelectricity characteristics. A bottom-gate-type ZnO-TFT was constructed successfully

and the measurements show that the device has an obvious field effect performance and a favorable saturation characteristic.

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references

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. 张新安,张景文,杨晓东,等.L-MBE法制备以ZnO为沟道层的薄膜晶体管 [J]. 半导体学报 ,2006,27(6):1501-1504.

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