单晶6H-SiC纳米线的可控掺杂及光学特性

范 翊; 高凤梅; 杨为佑; 蒋大鹏; 张立功

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单晶6H-SiC纳米线的可控掺杂及光学特性

材料物理和化学 | 更新时间：2020-08-12

- 单晶6H-SiC纳米线的可控掺杂及光学特性
- Controlled Synthesis and Doping of Single-Crystalline 6H-SiC Nanowire and Its Optic Properties
- 液晶与显示 2009年24卷第6期页码：804-808
- 作者机构：
  
  1. 中国科学院长春光学精密机械与物理研究所激发态物理重点实验室, 吉林长春 130033,E-mail:fany@ciomp.ac.cn
  2. 宁波工程学院材料工程研究所,浙江宁波,315016
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TB383.1
- 收稿日期：2009-08-12，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-12-30，
  
  纸质出版日期：2009-12-30
- 稿件说明：
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范翊;高凤梅;杨为佑;蒋大鹏;张立功. 单晶6H-SiC纳米线的可控掺杂及光学特性[J]. 液晶与显示, 2009,24(6): 804-808

FAN Yi;GAO Feng-mei;YANG Wei-you;JIANG Da-peng;ZHANG Li-gong. Controlled Synthesis and Doping of Single-Crystalline 6H-SiC Nanowire and Its Optic Properties[J]. 液晶与显示, 2009,24(6): 804-808
范翊;高凤梅;杨为佑;蒋大鹏;张立功. 单晶6H-SiC纳米线的可控掺杂及光学特性[J]. 液晶与显示, 2009,24(6): 804-808 DOI：

FAN Yi;GAO Feng-mei;YANG Wei-you;JIANG Da-peng;ZHANG Li-gong. Controlled Synthesis and Doping of Single-Crystalline 6H-SiC Nanowire and Its Optic Properties[J]. 液晶与显示, 2009,24(6): 804-808 DOI：

摘要

采用有机前驱体制备纳米材料工艺

制备出不同Al掺杂浓度的6H-SiC纳米线(Al/6H-SiC)。用HRTEM、EDX、XRD等对纳米线进行了表征

发现随着起始材料中异丙醇铝含量的增加

所制备的纳米线中的Al浓度也在增加

最高可达到1.25%

HRTEM显示晶格间距为0.26 nm和0.25 nm

对应为6H-SiC的(101)和(102)面间距

Si、C原子比为1 ∶ 1。拉曼光谱得到这种6H-SiC的声子能量为100 meV

由吸收光谱带边吸收外推计算得到Al/6H-SiC纳米线光学带隙

掺杂浓度越大

吸收边红移越大。

Abstract

Al-doped 6H-SiC nanowires (Al/6H-SiC) were successfully fabricated via catalyst-assisted pyro-lysis of polymeric precursor. The samples were characterized by HRTEM

EDS and XRD. The results showed that the doped concentrations were adjusted from 0.5% up to 1.25% with the Al concentrations in the precursors. The HRTEM pattern illustrated that the lattice fringe spacings are 0.26 nm and 0.25 nm. EDX shows the atom ratio of Si and C is 1 : 1. The XRD pattern demonstrated that Al-doping causes a decrease in the lattice parameters with Al concentration as compared with standard values. The optical properties of single-crystalline 6H-SiC nanowires with different Al doping levels were characterized by Raman and absorption spectra. The Raman spectra reveal that the phonon energy of the single-crystalline SiC nanowire is 100 meV. We estimated the optical absorption band-gap of nanowires from optical band-edge absorption. Al doping results in a red-shift on the optical absorption edge of SiC nanowire

thus it demonstrates a reduction of optical band gap.

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