ZnO薄膜离子注入改性的研究进展

薛书文; 梅 芳; 肖世发; 黄子康; 莫 东

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ZnO薄膜离子注入改性的研究进展

器件制备技术及器件物理 | 更新时间：2020-08-12

- ZnO薄膜离子注入改性的研究进展
- Progress in Ion Beam Modification of ZnO Thin Films
- 液晶与显示 2009年24卷第3期页码：367-371
- 作者机构：
  
  湛江师范学院物理系,广东湛江 524048,E-mail:xueshuwen@263.net
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN305.3
- 收稿日期：2008-11-07，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-06-30，
  
  纸质出版日期：2009-06-30
- 稿件说明：
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薛书文;梅芳;肖世发;黄子康;莫东. ZnO薄膜离子注入改性的研究进展[J]. 液晶与显示, 2009,24(3): 367-371

XUE Shu-wen;MEI Fang;XIAO Shi-fa;HUANG Zi-kang;MO Dong. Progress in Ion Beam Modification of ZnO Thin Films[J]. 液晶与显示, 2009,24(3): 367-371
薛书文;梅芳;肖世发;黄子康;莫东. ZnO薄膜离子注入改性的研究进展[J]. 液晶与显示, 2009,24(3): 367-371 DOI：

XUE Shu-wen;MEI Fang;XIAO Shi-fa;HUANG Zi-kang;MO Dong. Progress in Ion Beam Modification of ZnO Thin Films[J]. 液晶与显示, 2009,24(3): 367-371 DOI：

摘要

ZnO是一种在短波长光电器件领域有巨大应用价值的Ⅱ-Ⅵ族化合物半导体材料

离子注入是常用的半导体掺杂技术

文章综述了国内外近年来离子注入技术在ZnO的n、p型掺杂等方面的研究进展。

Abstract

Zinc oxide (ZnO)

an important Ⅱ-Ⅵ semiconductor

has potential applications in short wavelength optoelectronics. Ion implantation is a conventional technique widely used in semiconductor industry. This paper summarized the developments and applications of ion implantation in fabrication of n- or p-type ZnO

etc.

关键词

Keywords

references

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