基于溶液法的金属诱导碟型晶畴多晶硅薄膜和薄膜晶体管的研究

赵淑云; 孟志国; 吴春亚; 王文; 郭海成

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基于溶液法的金属诱导碟型晶畴多晶硅薄膜和薄膜晶体管的研究

器件制备技术及器件物理 | 更新时间：2020-08-12

- 基于溶液法的金属诱导碟型晶畴多晶硅薄膜和薄膜晶体管的研究
- Investigation of Disk-Like Domain Polycrystalline Silicon Films and Thin-Film Transistors Using Solution-Based Metal Induced Crystallization
- 液晶与显示 2009年24卷第6期页码：812-817
- 作者机构：
  
  1. 香港科技大学电子及计算机工程系, 香港九龙
  2. 2. 南开大学光电子所天津,300071
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN321+.5
- 收稿日期：2009-07-01，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-12-30，
  
  纸质出版日期：2009-12-30
- 稿件说明：
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赵淑云;孟志国;吴春亚;王文;郭海成. 基于溶液法的金属诱导碟型晶畴多晶硅薄膜和薄膜晶体管的研究[J]. 液晶与显示, 2009,24(6): 812-817

ZHAO Shu-yun;MENG Zhi-guo;WU Chun-ya;WONG Man;KWOK Hoi-sing. Investigation of Disk-Like Domain Polycrystalline Silicon Films and Thin-Film Transistors Using Solution-Based Metal Induced Crystallization[J]. 液晶与显示, 2009,24(6): 812-817
赵淑云;孟志国;吴春亚;王文;郭海成. 基于溶液法的金属诱导碟型晶畴多晶硅薄膜和薄膜晶体管的研究[J]. 液晶与显示, 2009,24(6): 812-817 DOI：

ZHAO Shu-yun;MENG Zhi-guo;WU Chun-ya;WONG Man;KWOK Hoi-sing. Investigation of Disk-Like Domain Polycrystalline Silicon Films and Thin-Film Transistors Using Solution-Based Metal Induced Crystallization[J]. 液晶与显示, 2009,24(6): 812-817 DOI：

摘要

以非晶硅为晶化前驱物，采用镍盐溶液浸沾的方法可以得到超大尺寸碟型晶畴结构的低温多晶硅薄膜。所得多晶硅薄膜的平均晶畴尺寸大约为50 m，空穴的最高霍尔迁移率为30.8 cm2/Vs，电子的最高霍尔迁移率为45.6 cm

/Vs。用这种多晶硅薄膜为有源层，所得多晶硅TFT的场效应迁移率典型值为70~80 cm

/Vs，亚阈值斜摆幅为1.5 V/decade，开关电流比为1.0110

，开启电压为－8.3 V。另外，P型的TFT在高栅偏压和热载流子偏压下具有良好的器件稳定性。

Abstract

Polycrystalline silicon (poly-Si) films consisting of super-large disk-like domains were obtained with solution-based metal-induced crystallization (SMIC) of amorphous silicon. The prepared disk-like domain SMIC poly-Si has an average domain size of up to 50 m

highest hole Hall mobility of 30.8 cm

/Vs

and highest electron Hall mobility of 45.6 cm

/Vs. P-type poly-Si TFT based on disk-like domain SMIC poly-Si has high field effect mobility of 70~80 cm

-1

sub-threshold slope of 1.5 V/decade

on/off state current ratio of 1.0110

and threshold voltage of -8.3 V. Also

P-type disk-like domain SMIC poly-Si TFTs exhibited excellent reliability under high gate bias-stress and hot carrier bias-stress.

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references

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