透明非晶态氧化物半导体薄膜晶体管的研究进展

王中健; 王龙彦; 马仙梅; 付国柱; 荆 海

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透明非晶态氧化物半导体薄膜晶体管的研究进展

器件制备技术及器件物理 | 更新时间：2020-08-12

- 透明非晶态氧化物半导体薄膜晶体管的研究进展
- Research and Progress in Transparent Amorphous Oxide Semiconductor Thin Film Transistors
- 液晶与显示 2009年24卷第2期页码：210-216
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 中国科学院长春光学精密机械与物理研究所北方液晶工程研究开发中心,吉林长春 130031,E-mail:wangzj
  3. @. com,163
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN911.72
- 收稿日期：2008-08-04，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-04-30，
  
  纸质出版日期：2009-04-30
- 稿件说明：
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王中健;王龙彦;马仙梅;付国柱;荆海. 透明非晶态氧化物半导体薄膜晶体管的研究进展[J]. 液晶与显示, 2009,24(2): 210-216

WANG Zhong-jian;WANG Long-yan;MA Xian-mei;FU Guo-zhu;JING Hai. Research and Progress in Transparent Amorphous Oxide Semiconductor Thin Film Transistors[J]. 液晶与显示, 2009,24(2): 210-216
王中健;王龙彦;马仙梅;付国柱;荆海. 透明非晶态氧化物半导体薄膜晶体管的研究进展[J]. 液晶与显示, 2009,24(2): 210-216 DOI：

WANG Zhong-jian;WANG Long-yan;MA Xian-mei;FU Guo-zhu;JING Hai. Research and Progress in Transparent Amorphous Oxide Semiconductor Thin Film Transistors[J]. 液晶与显示, 2009,24(2): 210-216 DOI：

摘要

透明非晶态氧化物半导体薄膜晶体管(TAOS-TFT)以其诸多优势受到研究人员的青睐

最近几年发展迅速。文章以传统薄膜晶体管做对照

详细介绍了TAOS-TFT的原理、结构和性能

总结出TAOS-TFT相对于Si基TFT具有制备温度低、均一性好、迁移率高、对可见光全透明和阈值电压低等5方面的优势

指出了TAOS-TFT在进一步实用化过程中所面临的几个重要问题

其中最为重要的是需要尽快建立自身的集约化物理模型。

Abstract

Transparent amorphous oxide semiconductor thin film transistor (TAOS-TFT) are attracting interest for its several advantages for applications in the new generation display technology. Especially in recent years it develops rapidly. In this paper

five major advantages about TAOS-TFT are elaborated in detail by means of the contrast of traditional thin film transistors.For example

the low tempe-rature of fabrication

good homogeneity

the high mobility

the full transparency to visible light

the good performance of combination property of devices. Several crucial problems are also indicated about TAOS-TFT

such as

the in-depth study of metals component in mixed-oxide films

the further study of the influence of external environment (including bending stress

temperature

humidity

etc.) upon performance of the device

the further optimization for the preparation of the device

developing compact model with its own characteristics

and the requirements of the development and utilization of the metal element with a low crustal abundance.

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references

. Kagan C R, Andry P . Thin-Film Ttransistors [M]. New York: Marcel Dekker, 2003.

. 黄锡珉. 有源矩阵OLED [J]. 液晶与显示 , 2003, 18(3):157-160.

. 李文连. 有机电致发光显示屏技术 [J]. 液晶与显示 , 2003, 17(4):259-264.

. 杨澍,荆海,廖燕平,等. 驱动电子墨水电子纸的柔性TFT背板制造技术 [J]. 液晶与显示 , 2007, 22(2):167-175.

. Hoffman R L, Norris B J, Wager J F, et al. ZnO-based transparent thin-film transistors [J]. Appl. Phys. Lett., 2003, 82(5):733-735.

. Wager J F. Transparent Electronics [J]. Science, 2003, 300(5623):1245-1246.

. Wager J F, Keszler D A, Presley R E. Transparent Electronics [M]. Berlin: Springer, 2007.

. Hsieh H H, Wu C C. Amorphous ZnO transparent thin-film transistors fabricated by fully lithographic and etching processes [J]. Appl. Phys. Lett., 2007, 91(1):013502(1-3).

. Chung J H, Lee J Y, Kim H S, et al. Effect of thickness of ZnO active layer on ZnO-TFT's characteristics [J]. Thin Solid Films, 2008, 516(16):5597-5601.

. Nomura K, Ohta H, Takagi A, et al. Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors [J]. Nature, 2004, 432(25):488-492.

. Cho D H , Shinhyuk Y, Jaeheon S, et al. Post-annealing and passivations of transparent bottom gate IGZO thin film transistors .//SID08 Digest, San Jose:SID,2008:1243-1246.

. Wantae L, SeonHoo K, Wang Y L, et al. High-performance indium gallium zinc oxide transparent thin-film transistors fabricated by radio-frequency sputtering [J]. J. The Electrochemical Society, 2008,155(6): H383-H385.

. Kumomi H, Nomura K, Kamiya T, et al. Amorphous oxide channel TFTs [J]. Thin Solid Films, 2008,516: 1516-1522.

. Hsieh H H, Wu C H, Wu C C , et al. Amorphous In2O3-Ga2O3-ZnO thin film transistors and integrated circuits on flexible and colorless polyimide substrates //SID08 Digest, San Jose:SID,2008:1207-1210.

. Lim W, Kim S H, Wang W L , et al. Stable room temperature deposited amorphous InGaZnO4 thin film transistors [J]. J. Vacuum Science and Technology B, 2008, 26 (3):959-962.

. Wang W L, Lim W, Covert L N, et al. Room temperature deposited enhancement mode and depletion mode indium znic oxide thin film transistors [J]. The Electrochemical Society, 2008, 13 (3):159-164.

. Suresh A, Wellenius P, Dhawan A, et al. Room temperature pulsed laser deposited indium gallium zinc oxide channel based transparent thin film transistors [J]. Appl. Phys. Lett., 2007, 90 (12):123512(1-3).

. Choi C G, Seo S J, Baz B S. Solution-processed indium-zinc oxide transparent thin-film transistors [J]. Electrochemical and Solid-State Lett., 2008,11(1):H7-H9.

. Kim G H, Shin H S, Kim K H , et al. Fabrication of solution processed InGaZnO thin film transistor for active matrix backplane //SID08 Digest, San Jose:SID,2008:1258-1261.

. Nomura K, Takagi A, Kamiya T, et al. Amorphous oxide semiconductors for high-performance flexible thin-film transistors [J]. Japanese J. Appl. Phys., 2006, 45(5B):4303-4308.

. Ito M, Miyazaki C, Kon M, et al. Application of amorphous oxide TFT to electrophoretic display [J]. J. Non-Crystalline Solids, 2008, 354(19-25):2777-2782.

. 谢强,李宏建,黄永辉,等. 几种OLED有源驱动电路中像素单元电路的分析 [J]. 液晶与显示 , 2004, 19(6):462-467.

. Hayashi R, Sato A, Ofuji M, et al. Improved Amorphous In-Ga-Zn-O TFTs //SID08 Digest, San Jose:SID,2008:621-624.

. Hosono H, Kikuchi N, Ueda N, et al. Working hypothesis to explore novel wide band gap electrically conducting amorphous oxides and examples [J]. J. Non-Crystalline Solids, 1996, 198-220: 165-169.

. Hosono H, Yasukawa M, Kawazoe H. Novel oxide amorphous semiconductors:transparent conducting amorphous oxides [J]. J. Non-Crystalline Solids, 1996, 203:334-344.

. Takagia A, Nomurab K, Ohta H, et al. Carrier transport and electronic structure in amorphous oxide semiconductor, a-InGaZnO4 [J]. Thin Solid Films, 2004, 486(1-2):38-41.

. Wager J F. Transparent electronics-display applications? //SID07 Digest, San Jose:SID,2007:1824-1825.

. Jeong J K, Jeong J H, Choi J H, et al. 12.1-Inch WXGA AMOLED display driven by indium-gallium-zinc oxide TFTs array //SID08 Digest, San Jose:SID,2008:1-4.

. Lee J H, Kim D H, Yang D J, et al. Worlds Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT //SID08 Digest, San Jose:SID,2008:625-628.

. Suresh A, Muth J F. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors [J]. Appl. Phys. Lett., 2008, 92(3):033502.

. Chung H J, Jeong J H, Ahn T K, et al. Bulk-limited current conduction in amorphous InGaZnO thin films [J]. Electrochemical and Solid-State Lett., 2008, 11 (3): H51-H54.

. Song I, Kim S, Yin H, et al. Short channel characteristics of gallium-indium-zinc-oxide thin film transistors for three-dimensional stacking memory [J]. IEEE Electron Device Lett., 2008, 29 (6): 549-552.

. Crawford G P. Flexible Flat Panel Displays [M]. New York: John Wiley & Sons, 2005.

. Hsieh H H, Kamiya T, Nomura K, et al. Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states [J]. Appl. Phys. Lett., 2008, 92(13):133503(1-3).

. Lee K, Shur M, Fjeldly T A, et al. Semiconductor Device Modeling For VLSI [M]. Englewood Cliffs: Prentice Hall, 1993.

. Grabinski W, Nauwelaers B, Schreurs D. Transistor Level Modeling for Analog/RF IC Design [M]. Berlin: Springer, 2006.

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