几种电流型AM OLED像素电路及其电流缩放比的分析

王龙彦; 王中健; 马仙梅; 付国柱; 荆 海

doi:null

您当前的位置：

首页 >

文章列表页 >

几种电流型AM OLED像素电路及其电流缩放比的分析

器件制备技术及器件物理 | 更新时间：2020-08-12

- 几种电流型AM OLED像素电路及其电流缩放比的分析
- Analyses of Several Current Programmed AM OLED Pixel Circuits and Their Current Scaling Ratio
- 液晶与显示 2009年24卷第2期页码：204-209
- 作者机构：
  
  1. 中国科学院研究生院北京,100039
  2. 中国科学院长春光学精密机械与物理研究所北方液晶工程研究开发中心吉林长春 130031,E-mail:semicmos@gmail.com
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： TN304.5;TN431.2
- 收稿日期：2008-08-15，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-04-30，
  
  纸质出版日期：2009-04-30
- 稿件说明：
移动端阅览
王龙彦;王中健;马仙梅;付国柱;荆海. 几种电流型AM OLED像素电路及其电流缩放比的分析[J]. 液晶与显示, 2009,24(2): 204-209

WANG Long-yan;WANG Zhong-jian;MA Xian-mei;FU Guo-zhu;JING Hai. Analyses of Several Current Programmed AM OLED Pixel Circuits and Their Current Scaling Ratio[J]. 液晶与显示, 2009,24(2): 204-209
王龙彦;王中健;马仙梅;付国柱;荆海. 几种电流型AM OLED像素电路及其电流缩放比的分析[J]. 液晶与显示, 2009,24(2): 204-209 DOI：

WANG Long-yan;WANG Zhong-jian;MA Xian-mei;FU Guo-zhu;JING Hai. Analyses of Several Current Programmed AM OLED Pixel Circuits and Their Current Scaling Ratio[J]. 液晶与显示, 2009,24(2): 204-209 DOI：

摘要

分析了4种典型的电流型AM OLED像素驱动电路的工作原理

从中总结出了补偿阈值电压漂移的方法自动调节存储电容的电压以保证电流不变。着重提出了电流缩放比的定义

对传统结构、电流镜结构、分压结构和电容耦合结构这4种电流型AM OLED像素驱动电路的电流缩放比进行了比较和分析。在这4种电路中

电流缩放比依次增大

显示出电流型像素电路在解决电容充电时间问题上的进步与完善。

Abstract

Four typical current programmed AM OLED pixel circuits are analyzed in this paper

and based on these circuits

compensation method of threshold voltage shift is summarized

i.e.

auto-adjusting the voltage stored in the capacitor to supply a constant current. Current scaling ratio is defined

and with its increase

the current programmed AM OLED pixel circuits is improved in solving charging time of capacitor.

关键词

Keywords

references

. 黄锡珉. 有源矩阵OLED [J]. 液晶与显示 , 2003, 18(3):157-160.

. 李文连. 有机电致发光显示屏技术 [J]. 液晶与显示 , 2003, 17(4):259-264.

. 李云飞,王永生,张晓龙,等.a-Si ∶ H TFT OLED驱动电路中存储电容对显示性能的影响 [J]. 液晶与显示 , 2008, 23(5):572-577.

. Dawson R M A, Shen Z, Furst D A, et al. Design of an improved pixel for a poly silicon active-matrix organic LED display //SID98 Digest, San Francisco, CA:SID, 1998:11-14.

. Stewart M, Howell R S, Pires L, et al. Polysilicon VGA active matrix OLED displays-technology and performance //IEDM Tech. Dig.,San Francisco, CA:IEEE,1998:871-874.

. Nathan A, Kumar A, Sakariya K, et al. Amorphous silicon thin film transistor circuit integration for organic LED displays on glass and plastic [J]. IEEE J. Solid-State Circuits, 2003, 39(9):215-222.

. Goh J, Jang J, Cho K, et al. A new a-Si:H thin-film transistor pixel circuits for active matrix organic light-emitting diodes [J]. IEEE Electron Device Lett., 2003, 24(9):583-585.

. Jung S H, Nam W J, Han M K. A new voltage-modulated AMOLED pixel design compensating for threshold vol-tage variation in poly-Si TFTs [J]. IEEE Electron Device Lett., 2004, 25(10):690-692.

. He Y, Hattori R, Kanicki J. Current-source a-Si:H thin-film transistor circuit for active-matrix organic light-emitting displays [J]. IEEE Electron Device Lett., 2000, 21(12):590-592.

. He Y, Hattori R, Kanicki J. Improved a-Si ∶ H TFT pixel electrode circuits for active-matrix organic light emitting displays [J]. IEEE Transactions on Electron Devices, 2001, 48(7):1322-1325.

. Burrow P E, Forrest S R, Zhou T X, et al. Operating lifetime of phosphorescent organic light emitting devices [J]. Appl. Phys. Lett., 2000, 76(18):2493-2495.

. 郭英英,李荣玉,梁宝闻,等. AM-OLED四管像素驱动电路特性研究 [J]. 液晶与显示 , 2008, 23(6):667-670.

. Kumar A, Sakarya K, Servati P, et al. Design considerations for active matrix organic light emitting diode arrays [J] . IEE Proc. Circuit Devices Syst., 2003, 150 (4):322-328.

. Dawson R, Shen Z, Furst D A, et al. The impact of the transient response of organic light emitting diodes on the design of active matrix OLED displays //IEDM Tech. Dig., San Francisco, CA:IEEE,1998:875-878.

. Servati P, Nathan A. Functional pixel circuits for elastic AMOLED displays [J]//Proceedings of the IEEE, 2005, 93(7):1257-1264.

. Lee J H, Nam W J, Jung S H, et al. A new current scaling pixel circuit for AMOLED [J]. IEEE Electron Device Letters, 2004, 25(5):280-282.

. Lin Y C, Shieh H P, Kanicki J. A novel current-scaling a-Si ∶ H TFTs pixel electrode circuit for AM-OLEDs [J]. IEEE Transactions on Electron Devices, 2005, 52(6):1123-1131.

. Lee J H, Nam W J, Kim B K, et al. A new poly-Si TFT current-mirror pixel for active matrix organic light emitting diode [J]. IEEE Electron Device Lett., 2006, 27(10):830-833.

. Nathan A, Chaji G R, Ashtiani S J. Driving schemes for a-Si and LTPS AMOLED displays [J]. IEEE Journal of Display Technology, 2005, 1(2):267-277.

. Ashtiani S J, Servati P, Striakhilev D, et al. A 3-TFT current-programmed pixel circuit for AMOLEDs [J]. IEEE Transactions on Electron Devices, 2005, 52(7):1514-1518.

. He Y, Hattori R, Kanicki J. Four-thin film transistor pixel electrode circuits for active matrix organic light-emitting displays [J]. Jpn. J. Appl. Phys., 2001, 40:1199-1208.

. Sambandan S, Striakhilev D, Nathan A. Device and circuit level optimization for high performance a-Si ∶ H TFT-based AMOLED displays [J]. IEEE J. Display Technology, 2006, 2(1):52-59.

. Yumoto A, Asano M, Hasegawa H, et al. Pixel-driving methods for large-sized poly-Si AM-OLED displays //Proc. Int. Display Workshop,Tokyo,Japan:IDW, 2001:1395-1398.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

脉冲对InGaZnO薄膜晶体管性能的影响

高迁移率金属氧化物半导体薄膜晶体管的研究进展

氧化锌锡薄膜晶体管的制备与性能研究

聚乙烯醇基底上氧化物薄膜晶体管的制备及其特性

喷墨打印PVP绝缘层柔性薄膜晶体管研究