硫化锌/多孔硅体系和氧化锌/ 多孔硅体系的光学和电学特性比较

王彩凤; 李清山; 胡 波

doi:null

您当前的位置：

首页 >

文章列表页 >

硫化锌/多孔硅体系和氧化锌/ 多孔硅体系的光学和电学特性比较

材料物理和化学 | 更新时间：2020-08-12

- 硫化锌/多孔硅体系和氧化锌/ 多孔硅体系的光学和电学特性比较
- Comparison of Optical and Electrical Properties of ZnS/Porous Silicon and ZnO/Porous Silicon Systems
- 液晶与显示 2009年24卷第1期页码：34-37
- 作者机构：
  
  1. 滨州学院物理与电子科学系,山东滨州 256603,E-mail: cfwang_2004@163.com
  2. 鲁东大学物理系,山东烟台,264025
  3. 滨州学院飞行学院,山东滨州,256603
- 作者简介：
- 基金信息：
- DOI：
  中图分类号： O484.4+.1;O484.4+.2;TN383+.2
- 收稿日期：2008-07-12，
  
  修回日期：1900-01-02，
  
  网络出版日期：2009-02-20，
  
  纸质出版日期：2009-02-20
- 稿件说明：
移动端阅览
王彩凤;李清山;胡波. 硫化锌/多孔硅体系和氧化锌/ 多孔硅体系的光学和电学特性比较[J]. 液晶与显示, 2009,24(1): 34-37

WANG Cai-feng;LI Qing-shan;HU Bo. Comparison of Optical and Electrical Properties of ZnS/Porous Silicon and ZnO/Porous Silicon Systems[J]. 液晶与显示, 2009,24(1): 34-37
王彩凤;李清山;胡波. 硫化锌/多孔硅体系和氧化锌/ 多孔硅体系的光学和电学特性比较[J]. 液晶与显示, 2009,24(1): 34-37 DOI：

WANG Cai-feng;LI Qing-shan;HU Bo. Comparison of Optical and Electrical Properties of ZnS/Porous Silicon and ZnO/Porous Silicon Systems[J]. 液晶与显示, 2009,24(1): 34-37 DOI：

摘要

用脉冲激光沉积法在相同孔隙率的多孔硅(Porous Silicon

PS)衬底上生长了ZnS薄膜和ZnO薄膜

在室温下对ZnS/PS和ZnO/PS的光学和电学性质进行了比较。结果发现

ZnS/PS和ZnO/PS在可见光区450~700 nm都有一个较宽的光致发光谱带

呈现较强的白光发射

但ZnS/PS体系的白光发射性能要优于ZnO/PS体系的发光性能。从二者的

I-V

特性曲线来看

ZnS/PS异质结呈现出与普通二极管相似的整流特性

而ZnO/PS异质结的整流特性与普通二极管不同

其反向电流不饱和。

Abstract

ZnS films and ZnO films were prepared on porous silicon (PS) substrates with same porosity by pulsed laser deposition (PLD)

and the optical and electrical properties of ZnS/PS and ZnO/PS systems were compared at room temperature. The results showed that

there was a broad photoluminescence band from 450 nm to 700 nm in the visible region of both ZnS/PS and ZnO/PS composites

exhibiting intensive white light emission. However

the white light emission performance of ZnS/PS composite was better than that of ZnO/PS composite. Based on the

I-V

characteristics

ZnS/PS heterojunction exhibited the rectifying junction behavior

but the

I-V

characteristic of the ZnO/PS heterostructure was different from that of the common diode

whose reverse current was not saturated.

关键词

Keywords

references

. 程松华,曾祥斌. ZnO基薄膜晶体管的研究 [J]. 液晶与显示 , 2006, 21(5):515-520.

. 明楠,李岚,张晓松,等.球形ZnO的微波辅助合成及光谱研究 [J]. 发光学报 , 2007, 28(3):425-428.

. Vanheusden K, Warren W L, Seager C H, et al. Mechanisms behind green photoluminescence in ZnO phosphor powders [J]. J. Appl. Phys., 1996, 79(10): 7983-7986.

. Zhang S B, Wei S H, Zunger A. Intrinsic n-type versus p-type doping asymmetry and the defect physics of ZnO [J]. Phys. Rev. B, 2001, 63:075205.

. Yano S, Schroeder R, Sakai H, et al. High-electric-field photocurrent in thin-film ZnS formed by pulsed-laser deposition [J]. Appl. Phys. Lett., 2003, 82(13):2026-2028.

. Morozova N K, Karetnikov I A, Plotnichenko V G, et al. Transformation of luminescence centers in CVD ZnS films subjected to a high hydrostatic pressure [J]. Semiconductors,2004,38(1):36-41.

. 王晓静,李清山.多孔硅研究的发展 [J]. 液晶与显示 , 2003, 18(6):421-427.

. 王彩凤, 李清山, 张立春,等. 退火对ZnS/PS复合体系光致发光特性的影响 [J]. 发光学报, 2007, 28(4):541-545.

. Gokarna A, Bhoraskar S V, Pavaskar N R, et al. Optoelectronic characterization of porous silicon/CdS and ZnS systems [J]. Phys. Stat. Sol. (A), 2000, 182:175-179.

. Xu Dongsheng, Guo Guolin, Gui Linlin. Controlling growth and field emission property of aligned carbon nanotubes on porous silicon [J]. Appl. Phys. Lett., 1999, 75(4):481-484.

. Zhang P, Kim P S, Sham T K. Nanostructured CdS prepared on porous silicon substrate:structure, electronic, and optical properties [J]. J. Appl. Phys., 2002, 91(9):6038-6043.

. Gokarna A, Pavaskar N R, Sathaye S D, et al. Electroluminescence from heterojunctions of nanocrystalline CdS and ZnS with porous silicon [J]. J. Appl. Phys., 2002, 92(4):2118-2124.

. Liu Y L, Liu Y C, Yang H, et al. The optical properties of ZnO films grown on porous Si templates [J]. J. Phys. D:Appl. Phys., 2003, 36:2705-2708.

. Nasrallah T B, Amlouk M, Bernede J C, et al. Structure and morphology of sprayed ZnSthin films [J]. Phys. Stat. Sol., 2004, 201(14):3070-3076.

. WANG Cai-feng, LI Qing-shan, LV Lei, et al. Study of white light emission from ZnS/PS composite system [J]. Chin. Opt. Lett., 2007, 5(9):546-548.

浏览量

下载量

CSCD

文章被引用时，请邮件提醒。

提交

工具集

关联资源

基于不同色转换方式下占空比与色差的关系

量子点在显示应用中的研究进展

纳秒脉冲激光制备硅量子点发光的退火效应

ZnO纳米结构对液晶取向控制研究

不同氧气分压下的MOCVD法氧化锌薄膜生长